Product introduction:
SM1A25NSK-VB Product Introduction
SM1A25NSK-VB is a high-efficiency single N-type MOSFET in SOP8 package, manufactured using Trench technology, suitable for applications requiring high current switching. The maximum drain-source voltage (VDS) of this MOSFET is 100V, the maximum drain current (ID) is 4.2A, and its on-resistance (RDS(ON)) is 128mΩ and 124mΩ respectively, providing efficient current transmission at 4.5V and 10V gate voltages. This MOSFET is designed for low-power, high-efficiency power management applications and is widely used in power conversion, communication equipment, battery management systems and other fields to help reduce power loss and improve the overall circuit efficiency.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
100V |
|
1.8V |
4.2A |
|
|
124mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
100V |
|
1.8V |
4.2A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
100V |
|
1.8V |
4.2A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
SM1A25NSK-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|------------------------|--------------------------------|-----------------------------------------------|
| **Package** | SOP8 | Small surface mount package, suitable for compact electronic equipment applications|
| **Configuration** | Single N-type channel | Single channel design, suitable for unidirectional current control applications|
| **Maximum drain-source voltage (VDS)** | 100V | Maximum drain-source voltage of 100V, suitable for medium voltage range applications|
| **Gate-source voltage (VGS)** | ±20V | Supports ±20V gate drive voltage to meet various driving requirements|
| **Threshold voltage (Vth)** | 1.8V | Lower threshold voltage ensures that MOSFET is efficiently turned on at lower gate voltages|
| **On-resistance (RDS(ON))** | 128mΩ @ VGS = 4.5V | Low on-resistance, reduced power loss, improved transmission efficiency|
| **On-resistance (RDS(ON))** | 124mΩ @ VGS = 10V | Low on-resistance, reduced power loss, improved transmission efficiency|
| **Maximum drain current (ID)** | 4.2A | Maximum drain current of 4.2A, suitable for applications with low power requirements|
| **Technology** | Trench | Trench technology, optimized conduction performance and switching speed|
Domain and module applications:
Applications and module examples
1. **Power Management**
SM1A25NSK-VB is suitable for **power management systems**, especially in voltage conversion and current control applications. Its maximum drain-source voltage of 100V and maximum drain current of 4.2A make it an important application in **DC-DC converters** and **power adapters**. Through its low on-resistance (128mΩ and 124mΩ), it can reduce power loss and improve conversion efficiency, and is suitable for efficient power management in **portable devices** and **embedded systems**.
2. **Communication Equipment**
In **communication equipment**, SM1A25NSK-VB is used as a switching element to help achieve efficient power conversion. Its excellent conduction performance makes it perform well in **Wi-Fi routers, switches, fiber-optic communication equipment**, etc., especially in the power supply part that requires stable current control, helping to improve the energy efficiency of the equipment.
3. **Battery Management Systems**
SM1A25NSK-VB can be applied to **Battery Management Systems** to control the charging and discharging process of the battery. The maximum 4.2A current carrying capacity and low on-resistance of this MOSFET enable it to provide efficient current transmission and stability in battery management of **smartphones, tablets, power tools** and other portable battery-powered devices.
4. **Low Power Devices**
SM1A25NSK-VB is suitable for **low power devices**, especially in power-sensitive applications. Its maximum drain-source voltage of 100V enables it to meet the current requirements in low-power devices, such as **sensor modules, smart wearable devices, low-power embedded systems**, etc., ensuring that they can operate stably for a long time and maximize battery efficiency.
5. **Automotive Electronics**
In the field of **Automotive Electronics**, SM1A25NSK-VB can be used for **In-vehicle power management systems**, such as power windows, power seats, and intelligent battery management systems. Due to its high current handling capability and stability, this MOSFET can ensure that in-vehicle electronic devices work properly in high-performance and low-power modes, especially in automotive battery and power management, optimizing energy efficiency.
6. **LED Driver Circuits**
SM1A25NSK-VB can be used in **LED driver circuits** as a switching element to provide current control. Its low on-resistance ensures low power loss, enabling it to provide stable current and long-term working efficiency in **LED lighting** and **intelligent lighting systems**, improving light efficiency and extending lamp life.
7. **Consumer Electronics**
In **Consumer Electronics**, SM1A25NSK-VB can be used in **audio equipment, TV power management systems** and power conversion modules in other home appliances. It can efficiently transmit power while maintaining system stability and reducing heat generation, improving the user experience of the device.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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