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SM1A11NSU-VB Product details
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Product Introduction
SM1A11NSU-VB is a high-efficiency N-Channel MOSFET in a TO252 package, suitable for switching and control applications requiring medium power. The maximum drain-source voltage (VDS) of this MOSFET is 100V, the maximum drain current (ID) is 40A, and it supports a gate-source voltage (VGS) of ±20V. Its on-resistance (RDS(ON)) is 30mΩ at VGS=10V, providing excellent current conduction capability and low power consumption, suitable for various power management, power tools, LED drive and other applications. SM1A11NSU-VB uses Trench technology, with low on-resistance, fast switching response and high efficiency, and can provide efficient current control at low gate voltage, which is very suitable for efficient power systems and load switches.
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SM1A11NSU-VB is a high-efficiency N-Channel MOSFET in a TO252 package, suitable for switching and control applications requiring medium power. The maximum drain-source voltage (VDS) of this MOSFET is 100V, the maximum drain current (ID) is 40A, and it supports a gate-source voltage (VGS) of ±20V. Its on-resistance (RDS(ON)) is 30mΩ at VGS=10V, providing excellent current conduction capability and low power consumption, suitable for various power management, power tools, LED drive and other applications. SM1A11NSU-VB uses Trench technology, with low on-resistance, fast switching response and high efficiency, and can provide efficient current control at low gate voltage, which is very suitable for efficient power systems and load switches.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: SM1A11NSU-VB
- **Package type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 100V
- The maximum drain-source voltage is 100V, which is suitable for switch control in general power supply circuits and can support higher voltage applications.
- **Gate-source voltage (VGS)**: ±20V
- The maximum gate-source voltage is ±20V, which supports a wide range of drive control voltages and is suitable for compatibility with common control circuits.
- **Threshold voltage (Vth)**: 1.8V
- The threshold voltage is 1.8V. When the gate voltage exceeds this value, the MOSFET will turn on, which is suitable for low-voltage drive switch applications.
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- When VGS=10V, RDS(ON) is 30mΩ, and the on-resistance is low, which can effectively reduce power loss and improve circuit efficiency.
- **Drainage current (ID)**: 40A
- The maximum leakage current is 40A, which is suitable for medium and high current applications and can meet power switches and control circuits with higher power requirements.
- **Technology**: Trench
- Using Trench technology, it provides lower on-resistance and higher efficiency, which is suitable for power supply designs that require high efficiency and fast switching.
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- **Model**: SM1A11NSU-VB
- **Package type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 100V
- The maximum drain-source voltage is 100V, which is suitable for switch control in general power supply circuits and can support higher voltage applications.
- **Gate-source voltage (VGS)**: ±20V
- The maximum gate-source voltage is ±20V, which supports a wide range of drive control voltages and is suitable for compatibility with common control circuits.
- **Threshold voltage (Vth)**: 1.8V
- The threshold voltage is 1.8V. When the gate voltage exceeds this value, the MOSFET will turn on, which is suitable for low-voltage drive switch applications.
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- When VGS=10V, RDS(ON) is 30mΩ, and the on-resistance is low, which can effectively reduce power loss and improve circuit efficiency.
- **Drainage current (ID)**: 40A
- The maximum leakage current is 40A, which is suitable for medium and high current applications and can meet power switches and control circuits with higher power requirements.
- **Technology**: Trench
- Using Trench technology, it provides lower on-resistance and higher efficiency, which is suitable for power supply designs that require high efficiency and fast switching.
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Domain and module applications：
Application fields and module examples
1. **Power management system**
SM1A11NSU-VB can be widely used in power management systems such as switching power supplies (SMPS), DC-DC converters, and power factor correction (PFC) circuits. Its low on-resistance and high leakage current capability enable it to effectively reduce power loss and improve conversion efficiency, and is widely used in computer power supplies, communication equipment power supplies, and other fields.
2. **LED drive circuit**
Since SM1A11NSU-VB provides efficient current conduction, its on-resistance is 30mΩ at VGS=10V, which is very suitable for use in LED drive circuits. It can ensure a stable current supply and is widely used in LED lighting, backlights, and other low-power lighting systems.
3. **Battery management and charging system**
In the battery management system (BMS), SM1A11NSU-VB is suitable for battery current control, protection, and monitoring. It can accurately control the current flow to the battery, ensuring charging safety and battery life, and is suitable for applications such as electric vehicles (EVs), energy storage devices, and mobile power supplies.
4. **Load switch control**
The low on-resistance and high current capability of this MOSFET make it very suitable for use in load switch control circuits, especially in high-efficiency and high-current load switch applications. For example, in home appliances and industrial automation equipment, this MOSFET can be used as a switching element to accurately control the flow of current.
5. **Smart power tools and home appliances**
SM1A11NSU-VB is also widely used in power tools and home appliances. Its high conductivity and medium current capability enable it to control motor drive circuits, battery charging circuits, and power management modules. It performs well in power tools and home appliances that require fast switching and low power loss.
6. **Automotive Electronic Systems**
In automotive electronic systems, SM1A11NSU-VB can be used in key modules such as power management, load switch control, and battery management systems in electric vehicles, hybrid vehicles, and traditional vehicles. Its low on-resistance and high current capability can improve the energy efficiency of the system and ensure the reliability of the battery and motor system.
7. **Industrial Control Systems**
This MOSFET is also suitable for power conversion and switching applications in industrial control systems. Whether in automation equipment, industrial control PLCs, or high-efficiency power modules, SM1A11NSU-VB can provide stable switching and current control for various loads to ensure stable operation of the equipment.
8. **Small Consumer Electronics**
SM1A11NSU-VB can be used for power management in various small consumer electronic devices, such as smart home devices, wireless headphones, portable audio, etc. It has low power consumption and high efficiency, which can provide these devices with longer working time.
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1. **Power management system**
SM1A11NSU-VB can be widely used in power management systems such as switching power supplies (SMPS), DC-DC converters, and power factor correction (PFC) circuits. Its low on-resistance and high leakage current capability enable it to effectively reduce power loss and improve conversion efficiency, and is widely used in computer power supplies, communication equipment power supplies, and other fields.
2. **LED drive circuit**
Since SM1A11NSU-VB provides efficient current conduction, its on-resistance is 30mΩ at VGS=10V, which is very suitable for use in LED drive circuits. It can ensure a stable current supply and is widely used in LED lighting, backlights, and other low-power lighting systems.
3. **Battery management and charging system**
In the battery management system (BMS), SM1A11NSU-VB is suitable for battery current control, protection, and monitoring. It can accurately control the current flow to the battery, ensuring charging safety and battery life, and is suitable for applications such as electric vehicles (EVs), energy storage devices, and mobile power supplies.
4. **Load switch control**
The low on-resistance and high current capability of this MOSFET make it very suitable for use in load switch control circuits, especially in high-efficiency and high-current load switch applications. For example, in home appliances and industrial automation equipment, this MOSFET can be used as a switching element to accurately control the flow of current.
5. **Smart power tools and home appliances**
SM1A11NSU-VB is also widely used in power tools and home appliances. Its high conductivity and medium current capability enable it to control motor drive circuits, battery charging circuits, and power management modules. It performs well in power tools and home appliances that require fast switching and low power loss.
6. **Automotive Electronic Systems**
In automotive electronic systems, SM1A11NSU-VB can be used in key modules such as power management, load switch control, and battery management systems in electric vehicles, hybrid vehicles, and traditional vehicles. Its low on-resistance and high current capability can improve the energy efficiency of the system and ensure the reliability of the battery and motor system.
7. **Industrial Control Systems**
This MOSFET is also suitable for power conversion and switching applications in industrial control systems. Whether in automation equipment, industrial control PLCs, or high-efficiency power modules, SM1A11NSU-VB can provide stable switching and current control for various loads to ensure stable operation of the equipment.
8. **Small Consumer Electronics**
SM1A11NSU-VB can be used for power management in various small consumer electronic devices, such as smart home devices, wireless headphones, portable audio, etc. It has low power consumption and high efficiency, which can provide these devices with longer working time.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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