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SIS780DN-T1-GE3-VB Product details

Product introduction:

SIS780DN-T1-GE3-VB MOSFET Product Introduction

**SIS780DN-T1-GE3-VB** is a high-performance N-type power MOSFET in DFN8 (3x3mm) package, designed based on Trench technology. This MOSFET has a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 30A, suitable for high-efficiency low-voltage and high-current applications. **SIS780DN-T1-GE3-VB** has a low on-resistance (RDS(ON)) of 19mΩ (at VGS = 4.5V) and 13mΩ (at VGS = 10V), which gives it lower power loss and higher energy efficiency, enabling it to provide stable performance in multiple power management and switch control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 30V 1.7V 30A 13mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 30V 1.7V 30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 30V 1.7V 30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
SIS780DN-T1-GE3-VB MOSFET Detailed parameter description

| **Parameter** | **Value** |
|------------------------|-------------------------------------|
| **Model** | SIS780DN-T1-GE3-VB |
| **Package** | DFN8 (3x3mm) |
| **Configuration** | Unipolar N-type MOSFET |
| **Maximum drain-source voltage (VDS)** | 30V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 19mΩ (VGS = 4.5V) |
| **On-resistance (RDS(ON))** | 13mΩ (VGS = 10V) |
| **Maximum drain current (ID)** | 30A |
| **Technology** | Trench Technology|

Domain and module applications:

SIS780DN-T1-GE3-VB MOSFET application areas and module examples

1. **Power management system**
**SIS780DN-T1-GE3-VB** is widely used in power management systems due to its low on-resistance and high current carrying capacity, especially in low-voltage and high-current power switches and power regulation circuits such as DC-DC converters and AC-DC power modules. It can provide stable current and reduce power loss in these applications, improving overall energy efficiency.

2. **Battery management system (BMS)**
In the battery management system (BMS), **SIS780DN-T1-GE3-VB** is used for battery charge and discharge control and overcurrent protection. Its high current handling capability makes it suitable for the management of high-power battery packs, and its low on-resistance helps reduce energy loss during charging and discharging, improving system efficiency. This MOSFET is particularly suitable for battery management modules for power tools, electric vehicles, and wearable devices.

3. **Electric Vehicles (EV)/HEVs**
**SIS780DN-T1-GE3-VB** is widely used in battery management and power control modules for electric and hybrid vehicles. It can maintain low power consumption and high efficiency when transmitting high current, ensuring smooth battery charging and discharging process of electric vehicles, extending battery life, and providing reliable current switching in electric drive systems.

4. **Power Switching and Load Control**
In power switching and load control applications, the low on-resistance of **SIS780DN-T1-GE3-VB** makes it particularly suitable for high-efficiency switch control, especially in power switches for power tools, household appliances, and industrial equipment. With its high current capability, it can switch load current quickly and efficiently, and maintain stable working conditions.

5. **Motor Drive Systems**
**SIS780DN-T1-GE3-VB** is also suitable for motor drive systems, especially in low-voltage and high-efficiency motor control. Due to its low on-resistance and high current handling capability, it can efficiently drive various motors and reduce the heat loss of the system, ensuring that the motor runs stably and efficiently during operation.

6. **LED driver circuit**
**SIS780DN-T1-GE3-VB**'s low on-resistance characteristics enable it to perform well in LED driver circuits, especially in high-current and high-power LED lighting applications. It can efficiently provide constant current to drive high-power LED modules and is widely used in commercial lighting, street lighting and other high-efficiency lighting systems.

7. **Communication equipment and consumer electronics**
**SIS780DN-T1-GE3-VB** is widely used in communication equipment and consumer electronics, especially in miniaturized and low-power devices. Low on-resistance and high current capability make it an ideal choice for mobile devices and battery-powered wireless communication devices, ensuring long working hours and low heat loss.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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