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SIS332DN-T1-GE3-VB Product details

Product introduction:

SIS332DN-T1-GE3-VB Product Introduction

**SIS332DN-T1-GE3-VB** is an **N-type MOSFET**, using **DFN8(3x3)** package, with **30V** maximum drain-source voltage (VDS), and supports drain current (ID) up to **30A**. This MOSFET has **low on-resistance**, RDS(ON) is **13mΩ** when **VGS = 10V**, and RDS(ON) is **19mΩ** when **VGS = 4.5V**, which enables it to provide excellent performance in low current applications and is suitable for power management and switching circuits that require low power loss and high efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 30V 1.7V 30A 13mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 30V 1.7V 30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 30V 1.7V 30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
SIS332DN-T1-GE3-VB Detailed parameter description

- **Package type**: DFN8(3x3)
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 19mΩ @ VGS = 4.5V
- 13mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 30A
- **Maximum power dissipation (Pd)**: Approximately **20W** (depending on thermal design)
- **Operating temperature range**: -55°C to 150°C
- **Technology type**: Trench Technology
- **Package size**: 3mm x 3mm (DFN8)

Domain and module applications:

SIS332DN-T1-GE3-VB Application Fields and Module Examples

1. **DC-DC Converters**
Due to its low on-resistance and high current carrying capacity, **SIS332DN-T1-GE3-VB** is very suitable for **DC-DC converters**, especially in **power management** systems. It can be used as a switching element in **Buck converter** or **Boost converter** to help efficiently convert input voltage and provide a stable output voltage. Its **low RDS(ON)** performance can significantly reduce power loss and improve the overall efficiency of the system, especially for **portable electronic devices**, **automotive electronics** and **consumer appliances**.

2. **Load Switches**
**SIS332DN-T1-GE3-VB** is suitable for **load switch** applications, especially in scenarios that require high current switching and low power loss. It can be used in **load switching circuits**, for example in **battery management systems (BMS)** or **power distribution circuits**, as a switching element for **power on/off control**. Its **low on-resistance** ensures low voltage losses while enhancing the reliability and efficiency of load switching.

3. **Battery Management Systems**
In **battery management systems (BMS)**, **SIS332DN-T1-GE3-VB** can be used as an efficient **battery switching switch** for battery charge and discharge management. Its **high current carrying capacity** and **low on-resistance** make it very suitable for tasks such as battery monitoring, battery balancing and battery protection, especially for battery management in **electric vehicles (EV)** or **portable electronic devices**.

4. **Motor Drive Systems**
This MOSFET is also widely used in **motor drive systems**, especially for the drive control of **DC motors** and **BLDC motors**. **SIS332DN-T1-GE3-VB**, as a switching element, can provide efficient current switching and maintain stable performance during motor start, stop and speed regulation, suitable for use in **automation equipment**, **robotic systems** and **power tools**.

5. **Power Management for Communication Devices**
In **communication devices**, especially in the power management module of **base station power** or **wireless communication equipment**, **SIS332DN-T1-GE3-VB** is suitable as a switching element to control the input and output of power. Its **low on-resistance** and **high current carrying capacity** can significantly improve power efficiency, reduce energy waste, and ensure that communication equipment operates stably in a high-performance state.

6. **Consumer Electronics**
**SIS332DN-T1-GE3-VB**'s small **DFN8(3x3)** package and high performance make it very suitable for **consumer electronic devices**, such as **smartphones**, **tablets** and **smart watches**. It performs well in **battery-powered** and **power switching** systems, helping to improve the endurance of the device and reduce power consumption, meeting the needs of modern portable devices for long battery life and high performance.

7. **Automotive Electronics**
In the **automotive electronics** field, **SIS332DN-T1-GE3-VB** can be used for load switches and power management modules, especially **Battery Management Systems (BMS)** and **Power Transmission Systems** in **Electric Vehicles (EV)** and **HEVs**. Its high current carrying capability and low on-resistance characteristics enable it to ensure low power consumption and high reliability in **high-efficiency battery management** and **high-current transmission** systems.

8. **Power Amplifiers**
**SIS332DN-T1-GE3-VB** can also be used in **power amplifier circuits**, especially **signal amplifiers** in the **RF** field, to improve the linearity and gain of the system through efficient switching operations. It provides efficient switching control in **modems** and **signal processors** in power amplifiers.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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