Product introduction:
SIR892DP-T1-GE3-VB Product Introduction
**SIR892DP-T1-GE3-VB** is a high-performance **N-channel MOSFET** in a **DFN8 (5x6)** package, designed for applications requiring high current and low on-resistance. The **drain-source voltage (VDS)** of this MOSFET can reach a maximum of **30V**, and it provides a large current carrying capacity of **120A**, making it very suitable for use in high current density and high-efficiency electronic devices. Its **RDS(ON)** is only **3mΩ** at **VGS = 10V**, showing its extremely low power loss in the on state, ensuring higher efficiency and lower heat generation. With its **Trench technology**, this product performs well in high-frequency, high-power applications and is suitable for use as a switching element. It is widely used in power management, DC-DC converters, power tools, industrial control and other fields.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
SIR892DP-T1-GE3-VB Detailed parameter description
- **Package type**: DFN8 (5x6)
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS = 10V
- 5mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 120A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Pin configuration**: 8-pin, DFN8 package standard
- **Power loss**: The maximum power consumption (reference value) is 120W, suitable for high load applications
Domain and module applications:
Applications and modules
1. **High-efficiency power supply module (SMPS)**
**SIR892DP-T1-GE3-VB** has extremely low **RDS(ON)** and **high current carrying capacity**, making it an ideal choice for high-efficiency **switching power supply module** (SMPS). In **DC-DC converter**, it can effectively reduce energy loss, improve efficiency, and reduce heat dissipation, and is widely used in **communication power supply**, **industrial power supply**, and **server power supply system**. Its low on-resistance helps reduce power loss during the power conversion process, thereby achieving higher efficiency and longer working life.
2. **Battery Management System (BMS)**
**SIR892DP-T1-GE3-VB**'s **120A** high current carrying capacity makes it an ideal choice for **battery management system (BMS)**, especially in electric vehicles (EV) and large-capacity energy storage systems. By using this MOSFET, the battery charging and discharging process can be carried out efficiently and stably, while the low on-resistance effectively reduces the battery heat loss and prolongs the battery life.
3. **Power tools**
In **power tools**, **SIR892DP-T1-GE3-VB** is used to drive the motor and control the charging and discharging of the battery. With its low on-resistance and high current carrying capacity, it can improve the efficiency of power tools and battery life. This MOSFET can ensure high current flow while reducing heat, ensuring that the tool can continue to work efficiently under high loads.
4. **Electric vehicle charging system**
In **electric vehicle (EV) charging system**, **SIR892DP-T1-GE3-VB** is used for **fast charging control**, which reduces energy loss and improves charging efficiency by efficiently managing the battery charging process. Low on-resistance and high current carrying capacity mean that it can maintain stable operation during the charging process, reduce temperature rise, and shorten charging time, improving user experience.
5. **Portable Electronic Devices**
Due to its **small size** and **high efficiency**, **SIR892DP-T1-GE3-VB** is ideal for **portable electronic devices**, such as **smart phones**, **tablets** and **laptops**. The battery management system (BMS) of these devices can use this MOSFET to achieve fast charging and discharging, improve battery efficiency, and extend the battery life of the device.
6. **LED Lighting Systems**
**SIR892DP-T1-GE3-VB** is widely used in **LED driver power supplies**, especially in high-power LED lighting systems. Due to its **low RDS(ON)** and **large current carrying capacity**, it can efficiently provide stable current for multiple LEDs in parallel or series, ensuring high efficiency and long life when the lamp is working. This MOSFET can achieve precise control at low power loss to reduce energy waste.
7. **Solar Inverter**
In **Solar Inverter**, **SIR892DP-T1-GE3-VB** can be used to convert **direct current (DC)** into **alternating current (AC)**. Due to its **high current carrying capacity** and **low on-resistance**, this MOSFET can improve the efficiency of power conversion and reduce energy loss, helping to improve the overall efficiency of solar energy systems, especially in large-scale solar power generation systems, and has important application value.
8. **Industrial Automation and Motor Drive**
**SIR892DP-T1-GE3-VB** is also widely used in **industrial automation control systems** and **motor drive systems**. In **servo motor control**, **stepper motor drive** and **motor control systems**, it can provide efficient and stable current control to ensure precise control and fast response of the motor. Its low on-resistance can significantly reduce the power loss of the motor, thereby improving the overall efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features