Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
100V |
|
2.5V |
65A |
|
|
9mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
100V |
|
2.5V |
65A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
100V |
|
2.5V |
65A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
SIR878DP-VB MOSFET Detailed Product Profile
**Product Name**: SIR878DP-VB
**Package Type**: DFN8 (5x6mm)
**Configuration**: Single-N-Channel
**Technology Type**: Trench Technology
**Maximum Drain-Source Voltage (VDS)**: 100V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 2.5V
**On-Resistance (RDS(ON))**: 12.36mΩ @ VGS = 4.5V
**On-Resistance (RDS(ON))**: 9mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 65A
Domain and module applications:
SIR878DP-VB MOSFET Application Examples
1. **DC-DC Power Converter**:
The low on-resistance and high current capability of SIR878DP-VB make it ideal for use in DC-DC power converters, especially in applications requiring a 100V voltage range. Its excellent switching performance and low power loss improve conversion efficiency, making it ideal for use in industrial power supplies, server power supplies, communications equipment power supplies, and other fields.
2. **Battery Management System (BMS)**:
In a battery management system (BMS), SIR878DP-VB can efficiently control the charge and discharge state of the battery, ensuring battery safety and long life. Its low on-resistance and high current carrying capacity make it suitable for battery protection and management applications in electric vehicles (EVs) and high-performance battery storage systems.
3. **Power Factor Correction (PFC) Circuit**:
SIR878DP-VB can be applied to Power Factor Correction (PFC) circuits to provide efficient power conversion, reduce switching losses, and ensure efficient transmission of current and voltage. Its low RDS(ON) characteristics help improve the efficiency of the overall system and are widely used in power electronic equipment, LED driver power supplies, and home appliance power systems.
4. **Motor Drive System**:
SIR878DP-VB is capable of handling large currents and is suitable for motor drive systems. Especially when efficiently driving DC motors (DCM) or brushless DC motors (BLDC), it can provide stable power output, reduce losses, and improve system efficiency. This MOSFET performs well in applications such as robots, industrial automation, and brushless power tools.
5. **Power Switch and Load Control**:
SIR878DP-VB is widely used in load switches and power management systems, and can provide high efficiency and low losses during load switching. It can be used in medium and high power power supply systems, intelligent power management modules and high-efficiency power conversion modules, and is particularly suitable for power-intensive devices.
6. **Automotive electronic systems**:
In automotive electronic systems, SIR878DP-VB can be used for efficient power conversion and management. It can be applied to automotive battery management systems (BMS), electric drive systems of electric vehicles, on-board chargers, inverters and other modules. Its high current carrying capacity and low on-resistance characteristics enable it to meet the high efficiency requirements of automotive power systems.
7. **Wireless communication equipment**:
For wireless communication equipment such as base stations, routers, etc., SIR878DP-VB provides efficient power conversion and load control functions. Due to its efficient switching performance and low power loss, this MOSFET can ensure the continuous and stable operation of communication equipment, especially in situations where fast response and efficient power management are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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