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SIR876DP-VB Product details

Product introduction:

Product Introduction

**SIR876DP-VB** is a high-performance N-channel MOSFET in a DFN8 (5x6mm) package, designed for high-voltage, high-current switching applications. The device uses advanced Trench technology and has very low on-resistance (RDS(ON)), which can provide efficient current transmission while reducing system power consumption and heat generation. The drain-source voltage (VDS) of SIR876DP-VB is 100V, the maximum gate-source voltage (VGS) is ±20V, and the maximum drain current (ID) is 100A. It is very suitable for switching power supplies, power management systems, and motor drives with high current loads. Its threshold voltage (Vth) is between 1V and 3V, and it can work normally at a lower drive voltage, which is suitable for low-voltage control systems. The low RDS(ON) of SIR876DP-VB enables it to have lower power consumption at high loads and provide stable and reliable performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 100V 1~3V 100A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 100V 1~3V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 100V 1~3V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
Detailed parameter description

- **Model**: SIR876DP-VB
- **Package type**: DFN8 (5x6mm)
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 100V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1V ~ 3V
- **RDS(ON)**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **ID (maximum drain current)**: 100A
- **Technology**: Trench technology
- **Maximum power dissipation**: Calculated according to application and heat dissipation conditions
- **Operating temperature range**: -55°C to 150°C

Domain and module applications:

Application areas and module examples

1. **High-efficiency power management system**:
The low on-resistance (RDS(ON)) and high current capability of SIR876DP-VB make it very suitable for use in high-efficiency power management systems, especially in DC-DC converters. It can be used as a switching element to help improve conversion efficiency, reduce switching losses, and maintain low temperature operation under high loads. Its VDS value of 100V and ID value of 100A make it very suitable for high-power power modules such as server power supplies, power adapters, embedded power systems, etc.

2. **Motor drive system**:
In the motor drive system, SIR876DP-VB can be used to drive high-power motors, which are widely used in power tools, electric vehicles, robots, and automation control equipment. Due to its low on-resistance, it can operate efficiently under large current loads, reduce heat loss, and improve the efficiency and stability of the drive system.

3. **Battery Management System (BMS)**:
SIR876DP-VB is ideal for battery management systems that efficiently control the charging and discharging of batteries. When charging the battery, the MOSFET can switch current efficiently, reduce power losses, and due to its low RDS(ON), it can also improve the overall efficiency of the battery and extend battery life. In addition, its VDS value of 100V is also very suitable for high-voltage battery management.

4. **Power Converters and Power Switches**:
Due to its low on-resistance and high current capability, SIR876DP-VB can be widely used in various power converters, including efficient switching power supplies (SMPS), uninterruptible power supplies (UPS), etc. In these applications, the low RDS(ON) of the MOSFET can significantly increase the switching frequency, reduce power losses, and improve the overall efficiency of the system. It maintains stable operation under high load conditions and is suitable for occasions requiring high power transmission and precise voltage control.

5. **Electric Vehicle (EV) Charging Equipment**:
In electric vehicle charging systems, SIR876DP-VB can be used for power conversion and current regulation. Its high current handling capability and low on-resistance make it ideal for power management and power regulation in electric vehicle charging piles and on-board chargers, ensuring stability and efficiency during fast charging.

6. **High-efficiency power switch and LED driver**:
In LED driver and high-efficiency power switch applications, SIR876DP-VB's low RDS(ON) and high current carrying capacity are ideal for high-power LED drive systems, lighting control and other applications requiring precise current regulation. In these applications, it can provide fast and efficient switching control to ensure efficient and long-life operation of LED lighting systems.

7. **Communication base station power management**:
In communication base stations and data center power systems, SIR876DP-VB can be used for efficient power conversion and load regulation. Its high current and low RDS(ON) characteristics make it an ideal choice for these critical infrastructure devices, providing stable and reliable power support under high power conditions.

Overall, **SIR876DP-VB** is a versatile, high-performance MOSFET suitable for a wide range of power electronics fields, especially applications such as efficient power management, motor drive, battery management and power conversion. Its low on-resistance, good thermal management capabilities and high current carrying capacity make it excellent in high-efficiency, high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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