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SIR846DP-T1-GE3-VB Product details

Product introduction:

1. **Product Introduction**

SIR846DP-T1-GE3-VB is a high-performance N-type MOSFET in DFN8 (5x6) package with a maximum drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 100A. It is manufactured using Trench technology and has an extremely low on-resistance (RDS(ON)), which is 5mΩ at VGS=10V and 6mΩ at VGS=4.5V. This MOSFET has high-efficiency switching capability and low power loss, and is widely used in high-current applications such as power management, battery-powered devices, DC-DC converters, and other power electronics applications that require efficient current control.

SIR846DP-T1-GE3-VB is a MOSFET designed for high efficiency and low loss. It can work stably in high current and high voltage environments and has low thermal loss. It is very suitable for applications in high-efficiency power supplies, switching power supplies, power conversion, and battery management. Its excellent performance makes it an ideal choice for various systems requiring high efficiency and high power, especially in power tools, electric vehicles and industrial control systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 100V 1~3V 100A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 100V 1~3V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 100V 1~3V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
2. **Detailed parameter description**

- **Package type**: DFN8 (5x6)
- **Configuration**: Single channel N-type
- **VDS (drain-source voltage)**: 100V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1V to 3V
- **RDS(ON)**:
- 6mΩ (VGS=4.5V)
- 5mΩ (VGS=10V)
- **ID (drain current)**: 100A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Maximum power consumption**: Depends on system thermal design and heat dissipation conditions
- **Gate Charge (Qg)**: Under certain operating conditions, it has extremely low gate charge, which helps to improve switching efficiency.

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Domain and module applications:

3. **Application Examples**

The ultra-low RDS(ON) and high current capability of SIR846DP-T1-GE3-VB make it widely used in many fields, especially in high-efficiency power management and current control scenarios. The following are several typical application examples of this MOSFET:

1. **Power Management and DC-DC Converters**
This MOSFET is widely used in power management systems, especially in DC-DC converters and power regulators. Its low on-resistance enables it to significantly reduce power loss and improve conversion efficiency when switching, especially for applications that require high efficiency and low heat generation, such as server power supplies, battery charging systems, etc.

2. **Battery-Powered Devices**
SIR846DP-T1-GE3-VB is suitable for battery-driven devices such as portable electronic devices, power tools, and electric vehicles. In these applications, it effectively reduces power loss and extends battery operating time through its low RDS(ON) characteristics. The low resistance characteristic ensures efficient discharge of the battery while providing stable current control to help optimize battery performance.

3. **Power Tools and Electric Vehicles**
In the battery management system of power tools and electric vehicles, this MOSFET acts as a current switch and current protection component, capable of handling currents up to 100A, effectively reducing power consumption and heat generation during charging and discharging, and improving system efficiency. Its high current carrying capacity ensures that the system can operate stably under high power demands.

4. **Industrial Power Systems**
SIR846DP-T1-GE3-VB can be used in high power conversion devices, power factor correction circuits (PFC) and other industrial equipment requiring high power density and high efficiency in industrial power systems. Its high current capability and low on-resistance can significantly reduce the power loss of the system, helping companies improve energy efficiency and reduce operating costs.

5. **LED Drive and Lighting Systems**
This MOSFET is also suitable for efficient LED drive systems. In LED lighting equipment, MOSFET is responsible for efficient current conversion and regulation. Its low loss characteristics ensure high efficiency and longer service life of the system, and is widely used in high-power LED lighting solutions, such as indoor and outdoor lighting, street lighting, etc.

6. **Power Conversion and Motor Drive**
In power conversion applications, SIR846DP-T1-GE3-VB can be used in motor drivers, motor controllers and other high-current drive systems. Its high current handling capability and low loss characteristics make it an ideal choice for controlling the start, run and stop of motors, especially in applications requiring high efficiency and low heat generation.

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In summary, as a high-efficiency, low-power MOSFET, SIR846DP-T1-GE3-VB is suitable for power management, battery-driven equipment, power tools, industrial power systems, LED drivers and other fields. Its low on-resistance and high current carrying capacity make it an excellent choice for various systems that require high-efficiency current conversion and power management, and is an ideal choice for achieving high efficiency and energy saving.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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