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SIR774DP-T1-GE3-VB Product details

Product introduction:

SIR774DP-T1-GE3-VB MOSFET Product Introduction

SIR774DP-T1-GE3-VB is a high-performance N-channel MOSFET in DFN8 (5x6mm) package, designed for high current applications, with very low on-resistance and excellent power density. Its maximum drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) can reach ±20V, and the turn-on voltage (Vth) is 1.7V. The on-resistance (RDS(ON)) of this MOSFET is only 3mΩ at VGS = 10V and 5mΩ at VGS = 4.5V, which makes it have extremely low power loss and excellent thermal performance in high current environment, suitable for applications requiring high efficiency and low power loss.

Due to the use of Trench technology, SIR774DP-T1-GE3-VB can achieve fast switching operation and provide higher current carrying capacity (120A). This feature makes it particularly suitable for high-efficiency power management, battery management systems (BMS), automotive electronics, and other applications requiring high power conversion.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 120A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
SIR774DP-T1-GE3-VB MOSFET Detailed parameter description

- **Package type**: DFN8 (5x6mm)
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Turn-on voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench technology
- **Package size**: 5mm x 6mm (DFN8)

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Domain and module applications:

Applicable fields and module examples

1. **High-efficiency power conversion**
- **Application scenarios**: SIR774DP-T1-GE3-VB is very suitable for high-efficiency power conversion modules such as DC-DC converters, AC-DC power adapters and other high-power power management systems. Its ultra-low on-resistance (3mΩ) reduces the loss in current transmission and improves the overall efficiency of the system, especially in high-load and high-frequency conversion environments.

2. **Battery Management System (BMS)**
- **Application scenarios**: This MOSFET can be widely used in battery management systems (BMS), especially in electric vehicles, power tools and energy storage systems. SIR774DP-T1-GE3-VB has extremely high current carrying capacity (120A) and ultra-low on-resistance, which can efficiently control charging and discharging, ensure the safety and efficiency of battery management, and extend the service life of the battery.

3. **Automotive electronics**
- **Application scenarios**: In automotive electronic systems, SIR774DP-T1-GE3-VB can be used in modules such as electric vehicle drive systems, battery management, power distribution units (PDUs), and high-efficiency power conversion. Its low on-resistance and high current capability enable it to effectively reduce energy losses and provide stable current and voltage outputs, making it particularly suitable for high-power electronic control systems such as electric vehicle power systems, charging controllers, etc.

4. **Consumer electronics**
- **Application scenarios**: This MOSFET can be used in consumer electronics, especially in power modules for portable devices. Due to its small package (DFN8) and high efficiency, it is ideal for use in power converters for smartphones, tablets, and laptops, ensuring stable operation of the device under high power loads, reducing heat and extending device battery life.

5. **Power tools**
- **Application scenarios**: In power tools, SIR774DP-T1-GE3-VB is suitable for power conversion, drive control, and battery protection modules. It can provide stable power support in the high-load and frequent start-stop working environment of power tools, and significantly reduce energy loss through its low on-resistance and high current capability, thereby improving the working efficiency and service life of the tools.

6. **Green energy and solar power generation**
- **Application scenarios**: In the field of solar energy and green energy, SIR774DP-T1-GE3-VB can be used in efficient solar power generation systems, inverters, battery energy storage systems, etc. Its low RDS(ON) characteristics enable it to reduce losses and improve energy conversion efficiency during high power conversion, making it very suitable for power regulation and management of solar panels and energy storage systems.

7. **Current Protection and Overload Protection Circuit**
- **Application Scenarios**: Due to its high current carrying capacity and low resistance characteristics, SIR774DP-T1-GE3-VB can be used as a core component of current protection or overload protection circuits. It can efficiently monitor and cut off current, protect the system from abnormal conditions such as overcurrent or short circuit, and is suitable for smart grids, electric equipment and other high-power applications.

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**Summary**: SIR774DP-T1-GE3-VB is a high-performance, high-current carrying capacity N-channel MOSFET suitable for efficient power conversion, battery management, power tools, automotive electronics, green energy and other fields. Its low on-resistance and high current handling capability make it excel in high-power applications, especially for power management and power conversion modules that require high power density and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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