Product introduction：
1. Product Introduction (SIR496DP-T1-GE3-VB)
SIR496DP-T1-GE3-VB is a high-performance single N-channel MOSFET in DFN8 (5x6) package, designed for high-efficiency power management, load switching and fast switching applications requiring high current carrying capacity and low on-resistance. The maximum drain-source voltage (VDS) of this MOSFET is 30V, the gate-source voltage (VGS) is ±20V, and it has an ultra-low on-resistance (RDS(ON) 1.8mΩ @ VGS=10V), and can support a drain current (ID) of up to 160A. It uses advanced Trench technology to ensure fast switching speed and high efficiency, and is particularly suitable for applications requiring high current, high efficiency and low power loss.
The ultra-low on-resistance and high current capability of the SIR496DP-T1-GE3-VB make it an excellent choice for battery management, power tools, power conversion and other high-efficiency power modules, especially for high-frequency and high-power applications. Its small DFN8 (5x6) package not only saves space, but also improves heat dissipation efficiency, meeting the needs of compact electronic devices and high-power systems.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
160A |
|
|
1.8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
160A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
160A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
2. Detailed parameter description
- **Model**: SIR496DP-T1-GE3-VB
- **Package**: DFN8(5x6)
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 1.8mΩ @ VGS = 10V
- 2.5mΩ @ VGS = 4.5V
- **Drain current (ID)**: 160A
- **Maximum pulsed drain current (IDM)**: 640A (typical)
- **Power dissipation (Ptot)**: 40W (depending on heat dissipation conditions)
- **Switching times**:
- Turn-on time (tD(ON)): Fast
- Turn-off time (tD(OFF)): Fast
- **Technology**: Trench technology (low on-resistance, low switching losses)
- **Gate charge (Qg)**: 160nC @ VGS = 10V
- **Operating temperature range**: -55°C to +150°C
- **Maximum operating temperature**: +150°C
- **Thermal resistance (RθJC)**: 1.2°C/W
Domain and module applications：
### 3. Applications and Modules
#### Battery Management System (BMS) and Electric Vehicles (EV)
SIR496DP-T1-GE3-VB is widely used in Battery Management System (BMS) and Electric Vehicles (EV). Due to its high current capability and ultra-low on-resistance, it can effectively reduce energy loss during battery charging and discharging. This MOSFET is very suitable for battery charging and discharging management in electric vehicles, ensuring high efficiency and fast response during the charging process. Especially in high-power battery management and electric vehicle battery packs, it can improve the overall efficiency of the battery pack, reduce power loss, and improve endurance.
#### Power Tools and Drive Systems
SIR496DP-T1-GE3-VB is an ideal choice for power tools and drive systems. It supports drain currents up to 160A and has low on-resistance characteristics, which can effectively improve the power transmission efficiency of power tools. Whether it is a power tool, electric gardening tool or robot drive system, SIR496DP-T1-GE3-VB can provide stable and efficient power management and control to ensure efficient operation of the equipment under high load.
#### Efficient Power Management and DC-DC Converters
SIR496DP-T1-GE3-VB is an ultra-low on-resistance MOSFET, which is very suitable for efficient power management and DC-DC power converters. Its low RDS(ON) characteristics help to significantly reduce heat loss during power conversion and improve power conversion efficiency. This MOSFET is particularly suitable for efficient voltage regulation modules, load switches and high-frequency power supply applications, especially under high current and high frequency conditions to ensure stable operation of the system.
#### Mobile Devices and Consumer Electronics
The high current capability and small package of SIR496DP-T1-GE3-VB make it very suitable for mobile devices, consumer electronics and wearable devices. It can provide efficient power management and help extend battery life, suitable for battery-driven portable devices such as smartphones, tablets, and laptops. Its low RDS(ON) can improve the overall performance of these devices in high-efficiency operation.
#### Automation and Industrial Control
SIR496DP-T1-GE3-VB is also widely used in automation and industrial control systems. Its high current carrying capacity and low power loss make it suitable for high-frequency, high-power applications such as various industrial control, servo motor drive, power switching, etc. Especially in industrial automation equipment and robot control systems, it can provide precise and efficient power conversion and current control to ensure the stability and long-term reliable operation of the system.
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**Summary**
SIR496DP-T1-GE3-VB is a high-performance, ultra-low on-resistance N-channel MOSFET suitable for high-current, high-efficiency applications such as battery management, power tools, power management, and industrial control. Its 160A drain current capability and low RDS(ON) of 1.8mΩ make it ideal for applications requiring fast response, high current control and low power loss, improving overall system efficiency and performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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