Product introduction：
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SIR482DP-T1-GE3-VB is a high-performance single N-channel MOSFET in a DFN8 (5x6) package, designed for low voltage, high current, and high efficiency applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, which is suitable for operation in a low voltage environment. The maximum gate-source voltage (VGS) of SIR482DP-T1-GE3-VB is ±20V, which supports a variety of drive circuits and control systems. Its on-resistance (RDS(ON)) is very low, 5mΩ at VGS = 4.5V and 3mΩ at VGS = 10V, which can effectively reduce switching losses and power losses, and is very suitable for high current applications. The maximum drain current (ID) of this MOSFET is 120A, which can carry a large current load and is suitable for high power power management, switching power supplies and other fields. Using Trench technology, this MOSFET provides low on-resistance and good thermal performance, ensuring stable operation in high-efficiency power management systems.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
**
- **Model**: SIR482DP-T1-GE3-VB
- **Package Type**: DFN8 (5x6)
- **Configuration**: Single N-channel MOSFET
- **Drain-Source Voltage (VDS)**: 30V
The maximum drain-source voltage is 30V, suitable for low voltage application environment.
- **Gate-Source Voltage (VGS)**: ±20V
The maximum gate-source voltage is ±20V, suitable for a wide range of control voltages.
- **Threshold Voltage (Vth)**: 1.7V
The threshold voltage is 1.7V, which means that when the gate voltage exceeds this value, the MOSFET starts to turn on, with a lower turn-on voltage.
- **On-resistance (RDS(ON))**:
- **5mΩ (VGS = 4.5V)**
- **3mΩ (VGS = 10V)**
The on-resistance is 5mΩ at VGS = 4.5V and 3mΩ at VGS = 10V, which has extremely low conduction losses and is suitable for high current applications.
- **Drainage current (ID)**: 120A
The maximum leakage current is 120A, which can carry a large current load and is suitable for high power power supply systems.
- **Technology**: Trench
Using Trench technology, it has lower on-resistance and excellent switching performance, improves system efficiency and effectively manages heat.
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Domain and module applications：
Examples**
1. **High-efficiency DC-DC converter**
SIR482DP-T1-GE3-VB is ideal for high-efficiency DC-DC converters, especially in applications that require low voltage and high current, such as computer power supplies, server power supplies, and battery-powered systems. Its low on-resistance (RDS(ON)) and high leakage current capability make it ideal for high-efficiency power conversion, reducing energy losses in the system and improving overall energy efficiency.
2. **Motor drive system**
In the field of motor control, SIR482DP-T1-GE3-VB can be used to drive applications such as DC motors, stepper motors, or servo motors. Due to its low on-resistance, ability to withstand high current loads, and high switching frequency, it is very suitable for use as a high-efficiency switching element in motor drive systems, reducing power losses and improving the efficiency of the drive system.
3. **Battery Management System (BMS)**
In the battery management system, SIR482DP-T1-GE3-VB can be used for battery charge and discharge management, especially in electric vehicles, energy storage devices and large-scale battery packs. Low on-resistance helps improve the charge and discharge efficiency of the battery system and reduces heat generation, thereby improving the battery life and overall system performance.
4. **Intelligent Power Management System**
Due to its low RDS(ON) and high leakage current capability, SIR482DP-T1-GE3-VB is suitable for various intelligent power management systems, such as power adapters, smart battery chargers, etc. These applications require the system to efficiently handle power conversion while maintaining low losses and high efficiency.
5. **Power Amplifier and Radio Frequency (RF) Applications**
SIR482DP-T1-GE3-VB can be used in RF applications and power amplifier (PA) systems, especially in communication equipment, such as base station equipment and satellite communications. Low on-resistance and high current carrying capacity help improve signal transmission efficiency and reduce energy loss.
6. **Automotive Electronic Systems**
In the power systems of electric vehicles (EVs) and hybrid electric vehicles (HEVs), SIR482DP-T1-GE3-VB can be used for applications such as battery management, motor control, and charging systems. Its low on-resistance and high leakage current capability make it important in the battery charge and discharge control of electric vehicles, improving the efficiency and reliability of automotive power systems.
7. **LED Driver**
SIR482DP-T1-GE3-VB is also suitable for LED drivers and lighting control systems, especially in applications that require efficient driving and low power loss. By reducing switching losses and improving power efficiency, SIR482DP-T1-GE3-VB enables lighting systems that operate stably for a long time.
8. **Industrial Automation and Power Supply Systems**
In the field of industrial automation and power supply, SIR482DP-T1-GE3-VB can be used in industrial power conversion equipment, uninterruptible power supplies (UPS) and other power control modules. Due to its high current carrying capacity and low on-resistance, SIR482DP-T1-GE3-VB can effectively reduce energy loss in power supply systems and improve the overall stability of the system.
Through these applications, SIR482DP-T1-GE3-VB demonstrates its wide applicability in a variety of fields, especially in the fields of high-efficiency power management, motor control, automotive electronics and battery management, and can provide low power loss and high current carrying capacity to meet the needs of modern high-efficiency power conversion systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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