Product introduction:
1. Product Introduction (SIR410DP-T1-GE3-VB)
SIR410DP-T1-GE3-VB is a single N-channel MOSFET in DFN8 (5x6) package, designed for high-efficiency power conversion and load switching applications. Its maximum drain-source voltage (VDS) is 30V, gate-source voltage (VGS) is ±20V, with extremely low on-resistance (RDS(ON) 1.8mΩ @ VGS=10V), supporting a maximum drain current (ID) of 160A. This MOSFET uses Trench technology to provide ultra-low on-resistance and fast switching response, suitable for high-frequency, high-efficiency power management, battery-driven systems, power tools and other low-voltage applications requiring high current and high efficiency.
Its small DFN8 (5x6) package helps improve heat dissipation efficiency and optimize space occupancy, suitable for compact designs, while providing excellent current carrying capacity and fast switching performance. The SIR410DP-T1-GE3-VB is ideal for applications such as efficient power management, power tools, and battery management systems.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
160A |
|
|
1.8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
160A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
160A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
2. Detailed parameter description
- **Model**: SIR410DP-T1-GE3-VB
- **Package**: DFN8(5x6)
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 1.8mΩ @ VGS = 10V
- 2.5mΩ @ VGS = 4.5V
- **Drain current (ID)**: 160A
- **Maximum pulsed drain current (IDM)**: 500A (typical)
- **Power dissipation (Ptot)**: 30W (depending on heat dissipation conditions)
- **Switching times**:
- Turn-on time (tD(ON)): Fast
- Turn-off time (tD(OFF)): Fast
- Typical switching times suitable for high frequency applications
- **Technology**: Trench technology (low on-resistance, low switching losses)
- **Gate charge (Qg)**: 150nC @ VGS = 10V
- **Operating temperature range**: -55°C to +150°C
- **Maximum operating temperature**: +150°C
- **Thermal resistance (RθJC)**: 1.5°C/W
Domain and module applications:
### 3. Applications and modules
#### Power management and DC-DC converters
SIR410DP-T1-GE3-VB is ideal for efficient power management systems, especially in DC-DC converters. Its ultra-low on-resistance and high current carrying capacity ensure low power loss and high conversion efficiency, which is particularly effective in low-voltage applications such as 5V/12V. It can support high-frequency switching operations and is suitable for power modules in consumer electronics, battery-powered portable devices, power tools, and communication base stations, helping to optimize power efficiency and reduce heat dissipation issues.
#### Battery Management System (BMS) and Fast Charging System
SIR410DP-T1-GE3-VB has a wide range of applications in battery management systems (BMS) and fast charging systems. Its ultra-low on-resistance minimizes energy loss during charging, which is particularly suitable for scenarios that require high current and high-efficiency battery charging. Whether it is battery charging for power tools, fast charging of portable devices, or efficient charging systems for electric vehicles (EVs), the SIR410DP-T1-GE3-VB provides reliable performance to ensure charging speed and system stability.
#### Power Tools and Motor Drive Systems
The 160A drain current carrying capacity of the SIR410DP-T1-GE3-VB makes it ideal for power tools and motor drive systems. In power tools, this MOSFET can be used as a switching element to drive the motor and reduce power loss through its low RDS(ON) characteristics. It provides fast response and high efficiency in the start-up, control and drive modules of power tools, ensuring stable operation of the equipment in harsh use environments.
#### Automation and Robotics Systems
The SIR410DP-T1-GE3-VB is also ideal for motor drive and control in automation equipment and robotic systems. Due to its high current carrying capacity and fast switching characteristics, it can efficiently control high-current motors and ensure smooth operation of motors. It is particularly suitable for industrial automation, drive systems of robot arms, and other automation modules that require precise control.
#### Consumer Electronics and Mobile Devices
As consumer electronics and mobile devices have increasing requirements for battery life and charging speed, SIR410DP-T1-GE3-VB performs well in these applications. Its low on-resistance and high current support make this MOSFET suitable for battery management systems (BMS), power regulation, and power management modules, especially in products such as smartphones, tablets, and wearable devices, which can improve charging efficiency and extend battery life.
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**Summary**
SIR410DP-T1-GE3-VB is a high-efficiency, ultra-low on-resistance N-channel MOSFET suitable for efficient power management, DC-DC converters, battery management systems, fast charging, power tools, and automation and consumer electronics. Its high current carrying capacity and low loss characteristics make it play an important role in modern electronic devices that require high efficiency and low power consumption, and is particularly suitable for compact designs and applications that require fast response.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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