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SIR406DP-T1-GE3-VB Product details

Product introduction:

SIR406DP-T1-GE3-VB Product Introduction

SIR406DP-T1-GE3-VB is a high-performance, low on-resistance N-type MOSFET in a DFN8 (5x6) package. This MOSFET is designed for high-efficiency, high-current density power switching applications with a maximum drain-source voltage (VDS) of 30V and a maximum drain current (ID) of 120A. Its extremely low on-resistance of 3mΩ @ VGS=10V and 5mΩ @ VGS=4.5V enables extremely low power losses in high-current applications, making it suitable for systems that require low resistance, high switching frequency and high current carrying capacity. Using **Trench** technology, the SIR406DP-T1-GE3-VB is ideal for high-efficiency power conversion and current control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 120A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
SIR406DP-T1-GE3-VB Detailed Parameters

| Parameter | Value | Description |
|-------------------------|------------------------------|---------------------------------------------|
| **Package** | DFN8 (5x6) | Provides compact, low parasitic inductance and efficient thermal management package|
| **Configuration** | Single N-type channel | Suitable for load switch and low-side switch applications|
| **Maximum drain-source voltage (VDS)** | 30V | Suitable for low-voltage switching circuits|
| **Gate-source voltage (VGS)** | ±20V | Maximum gate voltage is ±20V, suitable for common drive signals|
| **Threshold voltage (Vth)** | 1.7V | Ensure reliable conduction under normal drive voltage|
| **On-resistance (RDS(ON))** | 5mΩ @ VGS = 4.5V | Very low on-resistance for high current, high performance applications|
| **On-resistance (RDS(ON))** | 3mΩ @ VGS = 10V | Very low on-resistance for improved system efficiency|
| **Maximum drain current (ID)** | 120A | High current capability for high load power conversion systems|
| **Technology** | Trench | Trench technology reduces conduction losses and improves efficiency|

Domain and module applications:

Applications and module examples

1. **Power Conversion Systems**
SIR406DP-T1-GE3-VB is widely used in power conversion systems such as **DC-DC converters** and **AC-DC power adapters** due to its low on-resistance and high current capability. Its extremely low on-resistance (3mΩ @ VGS=10V) can greatly reduce power loss during the conversion process and improve energy efficiency. It is particularly suitable for high-efficiency power conversion modules, such as power switches in **high-efficiency battery charging systems** or **solar inverters**.

2. **Electric Vehicle (EV) Charging Management System**
In **Electric Vehicle Battery Management System (BMS)**, SIR406DP-T1-GE3-VB is an ideal power switch component. The battery system of electric vehicles usually requires high current transmission, and the 120A maximum drain current and low on-resistance of this MOSFET make it very suitable for battery charging and discharging control, reducing power loss and improving the energy efficiency of the battery system.

3. **High-Efficiency Motor Drivers**
SIR406DP-T1-GE3-VB is also suitable for **motor drive systems**, especially in the drive of **brushless DC motors (BLDC)** or **stepper motors**. The low on-resistance enables it to reduce energy loss during motor startup and operation, and its high current carrying capacity ensures the stability and high efficiency of the motor system. In motor drives in the fields of industrial automation and power tools, SIR406DP-T1-GE3-VB can provide excellent performance.

4. **Load Switching and Protection Circuits**
The low on-resistance and high current capability of SIP406DP-T1-GE3-VB make it very suitable for use as a switching element in **load switches** and **overcurrent protection circuits**. It can efficiently control the direction of current flow while ensuring low heat loss under high current loads, thereby improving the stability and safety of power systems. Typical applications include **overcurrent protection modules** and **overtemperature protection circuits**.

5. **Fast Switching and High-Frequency Applications**
Due to its low on-resistance and high switching frequency characteristics, SIR406DP-T1-GE3-VB is also suitable for applications that require fast switching, such as **switching power supplies** and **RF power amplifiers**. It can effectively reduce switching losses and maintain good performance in high-frequency applications, suitable for current control of high-speed power systems and communication modules.

6. **Consumer Electronics**
The low power consumption and high efficiency of SIR406DP-T1-GE3-VB make it widely used in the field of consumer electronics, especially in **battery-powered devices** and **portable electronic devices**. For example, in the charging circuit of **mobile devices** or **wireless headset charging system**, the low on-resistance MOSFET helps to improve the efficiency of battery charging and extend the service life of the device.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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