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SIR402DP-T1-GE3-VB Product details

Product introduction:

SIR402DP-T1-GE3-VB MOSFET Product Introduction

**SIR402DP-T1-GE3-VB** is a high-performance N-type MOSFET in a DFN8 (5x6mm) package, suitable for use in space-constrained applications that require efficient current switching. It has a low on-resistance (RDS(ON) as low as 7mΩ @ VGS = 10V), which enables it to effectively reduce power losses in high-current applications, thereby improving the overall efficiency of the system. This MOSFET uses Trench technology and exhibits excellent performance under high-frequency switching and high-current loads. It can withstand a maximum drain-source voltage of 30V and a maximum drain current of 80A. It is suitable for power management and motor drive fields that require high efficiency and low power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 80A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 80A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
SIR402DP-T1-GE3-VB MOSFET Detailed parameter description

| **Parameter** | **Value** |
|---------------------|----------------------------------|
| **Model** | SIR402DP-T1-GE3-VB |
| **Package** | DFN8 (5x6mm) |
| **Configuration** | Unipolar N-type MOSFET |
| **Maximum drain-source voltage (VDS)** | 30V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 9mΩ (VGS = 4.5V) |
| **On-resistance (RDS(ON))** | 7mΩ (VGS = 10V) |
| **Maximum drain current (ID)** | 80A |
| **Technology** | Trench Technology|

Domain and module applications:

SIR402DP-T1-GE3-VB MOSFET Application Fields and Module Examples

1. **High-efficiency power management system**
Due to its low on-resistance (only 7mΩ @ VGS = 10V) and high current carrying capacity (maximum 80A), **SIR402DP-T1-GE3-VB** performs well in high-efficiency power management systems. Especially in power conversion and DC-DC converters, it can effectively reduce switching losses and improve the energy efficiency and stability of power supplies. Suitable for various mobile devices, portable power devices, and industrial power management modules.

2. **Power tool drive circuit**
In power tool and motor drive applications, this MOSFET can be used in the drive circuit of the motor. Due to its maximum drain current of up to 80A, this MOSFET can efficiently control the starting, speed regulation and braking process of the motor, while ensuring the efficiency and stability of the system during operation. The low on-resistance reduces the power consumption of the motor drive system and improves the performance and endurance of the power tool.

3. **Automation control systems**
In industrial automation and robotic control systems, **SIR402DP-T1-GE3-VB** can provide stable and efficient switching functions. It can drive loads such as sensors, motors and actuators while providing fast response and precise control, suitable for precision control in robots and automated production lines.

4. **Automotive electronics**
This MOSFET can also be used in power management systems in electric vehicles (EVs) and hybrid electric vehicles (HEVs). For example, in a battery management system (BMS), SIR402DP-T1-GE3-VB can efficiently control the charging and discharging process of the battery to ensure that the battery operates in a safe and optimized state. Its low on-resistance and high current carrying capacity enable it to handle the high current battery management needs in EVs.

5. **Communication equipment power supply**
In communication equipment and network hardware, **SIR402DP-T1-GE3-VB** can be used as a power switching element to provide efficient power conversion. As the demand for efficient power supplies in communication equipment increases, the low on-resistance and high current handling capability of this MOSFET make it an ideal choice to improve the overall efficiency and performance of the power module.

6. **LED drive circuit**
Due to its low power loss characteristics, this MOSFET is suitable for efficient power conversion in LED drive circuits. SIR402DP-T1-GE3-VB can be used as a switching element to control the brightness and working state of LED bulbs, reduce excessive heat generation, and provide a long-term stable power supply. It is widely used in the lighting industry, especially in high-efficiency and energy-saving LED lighting systems.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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