Product introduction：
SIR166DP-VB Product Introduction
**SIR166DP-VB** is a high-efficiency **N-type MOSFET**, packaged in **DFN8(5x6)**, with **30V** maximum drain-source voltage (VDS) and **120A** maximum drain current (ID). It uses **Trench technology** and has extremely low on-resistance (RDS(ON)). When **VGS=10V**, the on-resistance is only **3mΩ**, and when **VGS=4.5V**, it is **5mΩ**, which makes it have very excellent efficiency in high-power applications. This MOSFET can be widely used in fields that require high current, high efficiency and low power loss, and is suitable for **power management, power conversion, DC motor control** and many other occasions.
Its **DFN8** package provides low thermal resistance, enabling it to dissipate heat efficiently, suitable for use in high-density circuit board design and applications that require compact space. With its high performance parameters, the SIR166DP-VB is an ideal choice for all types of high-efficiency power supply designs, especially where high switching speeds and low heat losses are required.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
SIR166DP-VB detailed parameter description
- **Package**: DFN8(5x6)
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS=4.5V
- 3mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Maximum power consumption (Pd)**: About 50W (depending on the heat dissipation)
- **Operating temperature range**: -55°C to 150°C
- **Technology type**: Trench technology
Domain and module applications：
SIR166DP-VB application areas and module examples
1. **High-efficiency power management (Power Management)**
SIR166DP-VB is suitable for **high-efficiency power conversion** and **power management systems**, especially in **DC-DC converters** and **switching power supplies (SMPS)**. Its **low on-resistance** and **high current carrying capacity** make it an ideal choice in power systems, providing lower power loss in high-frequency switching operations and improving overall system efficiency, especially suitable for low-voltage (30V) power supply designs.
2. **DC Motor Drive**
In **DC motor drive systems**, SIR166DP-VB can be used for high-current motor control, providing stable current transmission and reducing losses in motor control circuits. With its **extremely low on-resistance**, it can effectively reduce heat generation in the drive system and improve drive efficiency. Applicable to **power tools, electric bicycles, automation equipment, etc.**
3. **High-performance Battery Management Systems**
SIR166DP-VB can be used in **Battery Management Systems (BMS)**, especially in **Electric Vehicles (EV)** or **Energy Storage Systems (ESS)**. This MOSFET can efficiently switch current during charging and discharging, reduce power losses in battery management systems, and improve battery efficiency. Due to its **low on-resistance**, it is suitable for high-current battery charging and discharging.
4. **Automotive Electronics Applications**
In **Automotive Electronics**, SIR166DP-VB can be used in **Battery Drive Systems, Vehicle Power Management, Inverters, On-board Power Systems, etc.** Its high current and high switching performance are particularly suitable for applications that require high-frequency and high-efficiency conversion. It can provide higher efficiency and reduce system energy consumption in the power conversion modules of electric vehicles (EV) and hybrid electric vehicles (HEV).
5. **Renewable Energy Systems**
In **renewable energy** systems such as **solar inverters** or **wind power generation systems**, the SIR166DP-VB is used for power conversion and regulation. In these systems, it provides efficient power switching functions, supports the conversion of the generated DC power into AC power, and ensures the stability of the system under high current operation.
6. **Communication Power Supplies**
Due to its **high efficiency** and **low power loss**, the SIR166DP-VB is also suitable for **communication equipment power modules**. In **5G network infrastructure, data center power** and **communication base stations**, stable power supply is essential. The low **RDS(ON)** and **high current capacity** of the MOSFET enable it to work efficiently in strict power management environments and provide excellent power stability.
7. **High-Density Circuit Applications**
Due to its **DFN8(5x6) package**, SIR166DP-VB is suitable for **high-density circuit design with limited space**. This packaging technology not only saves space, but also provides lower thermal resistance, which helps heat dissipation and is suitable for use in modern electronic products (such as **smart home appliances, portable devices, industrial control equipment**, etc.).
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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