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SIHW47N60E-GE3-VB Product details
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SIHW47N60E-GE3-VB is a single N-channel MOSFET in TO247 package with high voltage resistance and low conduction loss, designed for high power power switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, which can adapt to high voltage environments. Its maximum gate-source voltage (VGS) is ±30V, which can support higher gate control signals. The on-resistance (RDS(ON)) of SIHW47N60E-GE3-VB is 75mΩ (at VGS = 10V), which enables it to have excellent performance in high current and high efficiency applications. Its threshold voltage (Vth) is 3.5V, ensuring that it is stably turned on at a lower gate voltage. Using SJ_Multi-EPI technology, this MOSFET provides good thermal management characteristics and higher switching efficiency, and is widely used in power management, motor drive, battery management and other fields.
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SIHW47N60E-GE3-VB is a single N-channel MOSFET in TO247 package with high voltage resistance and low conduction loss, designed for high power power switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 650V, which can adapt to high voltage environments. Its maximum gate-source voltage (VGS) is ±30V, which can support higher gate control signals. The on-resistance (RDS(ON)) of SIHW47N60E-GE3-VB is 75mΩ (at VGS = 10V), which enables it to have excellent performance in high current and high efficiency applications. Its threshold voltage (Vth) is 3.5V, ensuring that it is stably turned on at a lower gate voltage. Using SJ_Multi-EPI technology, this MOSFET provides good thermal management characteristics and higher switching efficiency, and is widely used in power management, motor drive, battery management and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
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- **Model**: SIHW47N60E-GE3-VB
- **Package type**: TO247
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 650V
Suitable for stable operation in high voltage environment, with a maximum drain-source voltage of 650V.
- **Gate-source voltage (VGS)**: ±30V
The maximum gate-source voltage is ±30V, suitable for high gate voltage drive circuits.
- **Threshold voltage (Vth)**: 3.5V
The threshold voltage is 3.5V, which means that when the gate voltage exceeds this value, the MOSFET starts to turn on.
- **On-resistance (RDS(ON))**: 75mΩ (VGS = 10V)
At VGS = 10V, the on-resistance is 75mΩ, which has low conduction losses and is suitable for high current applications.
- **Drainage current (ID)**: 47A
The maximum leakage current of this MOSFET is 47A, which can handle large current loads and is suitable for high power circuits.
- **Technology**: SJ_Multi-EPI
The use of SJ_Multi-EPI technology improves the conduction performance and thermal management capabilities, reduces the on-resistance, and improves the system efficiency.
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**
- **Model**: SIHW47N60E-GE3-VB
- **Package type**: TO247
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 650V
Suitable for stable operation in high voltage environment, with a maximum drain-source voltage of 650V.
- **Gate-source voltage (VGS)**: ±30V
The maximum gate-source voltage is ±30V, suitable for high gate voltage drive circuits.
- **Threshold voltage (Vth)**: 3.5V
The threshold voltage is 3.5V, which means that when the gate voltage exceeds this value, the MOSFET starts to turn on.
- **On-resistance (RDS(ON))**: 75mΩ (VGS = 10V)
At VGS = 10V, the on-resistance is 75mΩ, which has low conduction losses and is suitable for high current applications.
- **Drainage current (ID)**: 47A
The maximum leakage current of this MOSFET is 47A, which can handle large current loads and is suitable for high power circuits.
- **Technology**: SJ_Multi-EPI
The use of SJ_Multi-EPI technology improves the conduction performance and thermal management capabilities, reduces the on-resistance, and improves the system efficiency.
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Domain and module applications：
Examples**
1. **Power Conversion and Power Management**
SIHW47N60E-GE3-VB can be widely used in power management systems such as DC-DC converters, AC-DC power adapters and UPS (Uninterruptible Power Supply) systems. In these applications, MOSFET, as the main switching element, can handle high voltage and high current, keep the conduction loss low, thereby improving power conversion efficiency and reducing heat loss.
2. **Motor Drive and Control**
This MOSFET is used in motor drive systems to control the start, stop and speed regulation of the motor, especially in high-power motor control systems, such as industrial power tools, electric vehicles and household appliances. The low on-resistance helps reduce heat generation, thereby improving the efficiency of the drive system.
3. **Battery Management System (BMS)**
In the battery management system (BMS), SIHW47N60E-GE3-VB can be used for the management of high-voltage battery packs, especially in electric vehicles and renewable energy storage systems. It can effectively control battery charging and discharging, ensure battery safety and efficiency, and reduce power loss through low on-resistance.
4. **Industrial Control and Automation**
This MOSFET can be used in power control and switching applications in industrial automation, such as servo motor drives, robot control systems, and other electrical equipment that require high current handling. Its high current carrying capacity and low on-resistance ensure high efficiency and stability of industrial control systems.
5. **Solar Inverters and High-Voltage Inverters**
Due to its high voltage tolerance, SIHW47N60E-GE3-VB is suitable for solar inverters and other high-voltage inverter applications. In these systems, MOSFET acts as the main switching element, handling the voltage conversion of solar panels, optimizing energy conversion efficiency and reducing heat loss.
6. **Automotive electronics**
In automotive electronic systems, SIHW47N60E-GE3-VB can be used as a high-voltage switching element and is widely used in electric power steering (EPS), on-board charging systems (OBC), and battery management systems (BMS) of electric vehicles. Because it can withstand higher voltages and currents and has lower conduction losses, it is very suitable for use in the power control system of electric vehicles, helping to improve the energy efficiency of the vehicle and the reliability of the power system.
7. **High-voltage switching and power regulation**
Due to its 650V drain-source voltage and high current carrying capacity, SIHW47N60E-GE3-VB is also suitable for occasions requiring high-voltage and high-current switch control, such as grid regulation, power switchgear, etc. It can efficiently provide stable switching performance in high-power environments.
Through these applications, SIHW47N60E-GE3-VB demonstrates strong performance in the field of high-power, high-voltage power electronics, which can effectively improve the efficiency and stability of various power systems and is widely used in power management, industrial control, motor drive, automotive electronics and other fields.
1. **Power Conversion and Power Management**
SIHW47N60E-GE3-VB can be widely used in power management systems such as DC-DC converters, AC-DC power adapters and UPS (Uninterruptible Power Supply) systems. In these applications, MOSFET, as the main switching element, can handle high voltage and high current, keep the conduction loss low, thereby improving power conversion efficiency and reducing heat loss.
2. **Motor Drive and Control**
This MOSFET is used in motor drive systems to control the start, stop and speed regulation of the motor, especially in high-power motor control systems, such as industrial power tools, electric vehicles and household appliances. The low on-resistance helps reduce heat generation, thereby improving the efficiency of the drive system.
3. **Battery Management System (BMS)**
In the battery management system (BMS), SIHW47N60E-GE3-VB can be used for the management of high-voltage battery packs, especially in electric vehicles and renewable energy storage systems. It can effectively control battery charging and discharging, ensure battery safety and efficiency, and reduce power loss through low on-resistance.
4. **Industrial Control and Automation**
This MOSFET can be used in power control and switching applications in industrial automation, such as servo motor drives, robot control systems, and other electrical equipment that require high current handling. Its high current carrying capacity and low on-resistance ensure high efficiency and stability of industrial control systems.
5. **Solar Inverters and High-Voltage Inverters**
Due to its high voltage tolerance, SIHW47N60E-GE3-VB is suitable for solar inverters and other high-voltage inverter applications. In these systems, MOSFET acts as the main switching element, handling the voltage conversion of solar panels, optimizing energy conversion efficiency and reducing heat loss.
6. **Automotive electronics**
In automotive electronic systems, SIHW47N60E-GE3-VB can be used as a high-voltage switching element and is widely used in electric power steering (EPS), on-board charging systems (OBC), and battery management systems (BMS) of electric vehicles. Because it can withstand higher voltages and currents and has lower conduction losses, it is very suitable for use in the power control system of electric vehicles, helping to improve the energy efficiency of the vehicle and the reliability of the power system.
7. **High-voltage switching and power regulation**
Due to its 650V drain-source voltage and high current carrying capacity, SIHW47N60E-GE3-VB is also suitable for occasions requiring high-voltage and high-current switch control, such as grid regulation, power switchgear, etc. It can efficiently provide stable switching performance in high-power environments.
Through these applications, SIHW47N60E-GE3-VB demonstrates strong performance in the field of high-power, high-voltage power electronics, which can effectively improve the efficiency and stability of various power systems and is widely used in power management, industrial control, motor drive, automotive electronics and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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