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SIHW33N60E-GE3-VB Product details

Product introduction:

SIHW33N60E-GE3-VB MOSFET Product Introduction

**SIHW33N60E-GE3-VB** is a high voltage, high current carrying capacity N-type MOSFET in TO247 package, suitable for applications requiring higher voltage (650V) and higher current (47A) carrying. The on-resistance (RDS(ON)) of this MOSFET is as low as 75mΩ (VGS = 10V), which helps reduce power loss and improve switching efficiency. It uses SJ_Multi-EPI technology, with excellent switching performance and low conduction loss, making it very suitable for high-efficiency power applications such as power conversion, inverter, and charging systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 650V 3.5V 47A 75mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 650V 3.5V 47A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 650V 3.5V 47A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
SIHW33N60E-GE3-VB MOSFET detailed parameter description

| **Parameter** | **Value** |
|--------------------|---------------------------------|
| **Model** | SIHW33N60E-GE3-VB |
| **Package** | TO247 |
| **Configuration** | Unipolar N-type MOSFET |
| **Maximum drain-source voltage** | 650V |
| **Maximum gate-source voltage** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 75mΩ (VGS = 10V) |
| **Maximum drain current (ID)** | 47A |
| **Technology** | SJ_Multi-EPI technology|

Domain and module applications:

SIHW33N60E-GE3-VB MOSFET Application Fields and Module Examples

1. **High-efficiency Switching Power Supply (SMPS)**
SIHW33N60E-GE3-VB MOSFET is very suitable for high-efficiency switching power supply (SMPS) design due to its high voltage tolerance (650V) and low on-resistance (75mΩ). In the high-frequency power conversion process, this MOSFET can effectively reduce conduction loss and improve system efficiency, so it is widely used in computer power supplies, communication power supplies and various industrial power supply modules. Especially in scenarios where high voltage input (such as 220V AC power supply) is required, SIHW33N60E-GE3-VB can work stably and provide reliable power output.

2. **Solar Inverter**
In a solar power generation system, the inverter converts DC power into AC power to supply power to the grid or home use. Since solar inverters require high voltage tolerance and high efficiency conversion, the 650V maximum drain-source voltage and low on-resistance of SIHW33N60E-GE3-VB make it very suitable for this application. It can ensure that the inverter provides stable power output under different operating conditions while optimizing energy conversion efficiency.

3. **Electric Vehicle (EV) Battery Management System (BMS)**
In the battery management system (BMS) of electric vehicles, SIHW33N60E-GE3-VB MOSFET can be used as a switching element for battery charge and discharge control. The high current carrying capacity (maximum 47A) of this MOSFET enables it to handle high current loads in the battery pack, thereby ensuring efficient and safe battery management and preventing overcurrent or overvoltage from damaging the battery system. In addition, its high voltage tolerance makes it more reliable in high-voltage battery management systems.

4. **Power Factor Correction (PFC) Circuit**
SIHW33N60E-GE3-VB also performs well in power factor correction (PFC) circuits. Power factor correction circuits are used to optimize the efficiency of power delivery and reduce reactive power. In these circuits, SIHW33N60E-GE3-VB is able to handle high voltage (650V) and large current (47A), and achieve efficient power conversion through low on-resistance, and is widely used in industrial power supplies, UPS systems, and other high-efficiency power systems.

5. **Power Supply Module (PSU)**
Due to its low on-resistance and high current handling capability, SIHW33N60E-GE3-VB is suitable for a variety of high-efficiency power supply modules (PSU). Whether it is a power system in home appliances, industrial equipment, or communication equipment, SIHW33N60E-GE3-VB can provide a stable and efficient power management solution.

6. **Power tools and household appliances**
In power tools and household appliances (such as vacuum cleaners, electric washing machines, air conditioners), SIHW33N60E-GE3-VB MOSFET is often used as a switching element in the motor drive circuit. Its high current carrying capacity and low conduction loss contribute to the efficient drive of the motor and improve the efficiency and response speed of the power tool.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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