SIHU7N60E-GE3-VB Product details
Product introduction:
SIHU7N60E-GE3-VB is a high-voltage N-channel MOSFET in TO251 package, designed for high-voltage applications. Its maximum voltage resistance is 650V, suitable for medium-voltage power switching, power conversion, and motor drive. This MOSFET uses SJ_Multi-EPI technology, has a high on-resistance (RDS(ON) = 700mΩ @ VGS = 10V) and relatively low conductivity, so it is suitable for applications with low requirements for power loss and switching efficiency, especially in occasions with relatively small power requirements.
SIHU7N60E-GE3-VB has a maximum leakage current of 7A and has good high-voltage handling capabilities, which can effectively withstand the requirements of working in complex power management systems. Its higher on-resistance makes this MOSFET more applicable to low-power and low-current devices, suitable for reliable performance in medium-power applications. Whether in power management, home appliances, or industrial automation, SIHU7N60E-GE3-VB can provide stable and reliable current switching and power control.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 7A
- **Technology**: SJ_Multi-EPI technology
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Domain and module applications:
1. **Low-power switching power supply (SMPS)**
- **Application scenario**: SIHU7N60E-GE3-VB is suitable for low-power switching power supply (SMPS) applications, especially switch control in high-voltage power supply systems. Due to its high voltage withstand capability of up to 650V, this MOSFET is suitable for small power adapters, chargers, and low-power UPS systems. Despite its high on-resistance, it can still provide relatively economical and reliable power conversion without the need for extremely high efficiency.
2. **Power tool and home appliance drive system**
- **Application scenario**: In power tool and home appliance drive systems, SIHU7N60E-GE3-VB can be used for medium-power motor control. This MOSFET can be used for motor drive of household appliances such as vacuum cleaners, microwave ovens, power tools and other equipment. Its high voltage withstand and suitable current handling capability enable it to operate stably in these applications, especially for low-power motor drive systems, SIHU7N60E-GE3-VB provides a reliable solution.
3. **LED drive system**
- **Application scenarios**: SIHU7N60E-GE3-VB can also be used in LED drive circuits, especially in some applications that require higher voltage but lower power requirements. In these applications, MOSFET is used to control the current of LED light sources, providing stable power conversion and low-power operation. Its higher on-resistance is suitable for some low-power LED driver designs that do not require extreme efficiency.
4. **Battery Management System (BMS)**
- **Application scenarios**: SIHU7N60E-GE3-VB can also play a role in some low-power battery management systems (BMS). The 650V withstand voltage of MOSFET is suitable for handling the charging and discharging control of medium-voltage battery systems, and is particularly suitable for applications such as small energy storage systems and power tool batteries, providing precise current switching and battery protection.
5. **Industrial Automation and Control Systems**
- **Application Scenarios**: In some industrial automation and control systems, SIHU7N60E-GE3-VB can be used as a power switch. For example, it can provide effective current switching in the power management of sensors, solenoid valves, and actuators. In these systems, MOSFETs are used to achieve voltage control and power management, especially in low-power modules that do not require extremely high currents, and can provide suitable solutions.
6. **High-voltage Power Supply Protection**
- **Application Scenarios**: Due to its high voltage carrying capacity, SIHU7N60E-GE3-VB is suitable for use as a high-voltage power supply protection switch. In power supply systems that need to prevent faults such as overvoltage, overcurrent, and overheating, this MOSFET can ensure the stability of the circuit. It is suitable for protection circuits that require relatively low power consumption and reliable current control.
In summary, SIHU7N60E-GE3-VB is a high-voltage N-channel MOSFET in the medium voltage range, suitable for medium and low power applications. Its high voltage carrying capacity and relatively high on-resistance make it excellent in some applications requiring moderate power efficiency. It is suitable for many fields such as low-power switching power supplies, power tools, battery management, LED drivers and industrial control, and can provide reliable power control in high-voltage environments.
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