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SIHU5N50D-E3-VB Product details
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SIHU5N50D-E3-VB MOSFET Detailed Product Introduction
**Product Name**: SIHU5N50D-E3-VB
**Package Type**: TO251
**Configuration**: Unipolar N-channel
**Technology Type**: SJ_Multi-EPI Technology
**Maximum Drain-Source Voltage (VDS)**: 650V
**Maximum Gate-Source Voltage (VGS)**: ±30V
**Threshold Voltage (Vth)**: 3.5V
**On-Resistance (RDS(ON))**: 950mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 5A
**Product Overview**:
SIHU5N50D-E3-VB is a high voltage N-channel MOSFET in TO251 package, designed for high voltage, high power applications. With a maximum drain-source voltage of 650V and a maximum drain current of 5A, it is suitable for power conversion, motor control, and high-voltage DC power supplies. Using SJ_Multi-EPI technology, this MOSFET has a lower on-resistance (950mΩ @ VGS = 10V), which effectively improves power conversion efficiency, reduces heat generation, and improves overall system performance. Its maximum gate-source voltage is ±30V, making it compatible with a variety of drive circuits and able to withstand large voltage fluctuations.
**Product Name**: SIHU5N50D-E3-VB
**Package Type**: TO251
**Configuration**: Unipolar N-channel
**Technology Type**: SJ_Multi-EPI Technology
**Maximum Drain-Source Voltage (VDS)**: 650V
**Maximum Gate-Source Voltage (VGS)**: ±30V
**Threshold Voltage (Vth)**: 3.5V
**On-Resistance (RDS(ON))**: 950mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 5A
**Product Overview**:
SIHU5N50D-E3-VB is a high voltage N-channel MOSFET in TO251 package, designed for high voltage, high power applications. With a maximum drain-source voltage of 650V and a maximum drain current of 5A, it is suitable for power conversion, motor control, and high-voltage DC power supplies. Using SJ_Multi-EPI technology, this MOSFET has a lower on-resistance (950mΩ @ VGS = 10V), which effectively improves power conversion efficiency, reduces heat generation, and improves overall system performance. Its maximum gate-source voltage is ±30V, making it compatible with a variety of drive circuits and able to withstand large voltage fluctuations.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
SIHU5N50D-E3-VB MOSFET Detailed parameter description
- **VDS (maximum drain-source voltage)**: 650V
This MOSFET supports a drain-source voltage of up to 650V, enabling it to operate stably in high-voltage power supply applications. Suitable for applications such as power conversion and switching power supplies that require higher voltage resistance.
- **VGS (maximum gate-source voltage)**: ±30V
Supports gate-source voltage of ±30V, is compatible with a variety of standard drive circuits, and can still operate stably in complex circuits.
- **Vth (threshold voltage)**: 3.5V
At a gate-source voltage of 3.5V, the MOSFET starts to turn on. This higher threshold voltage design helps ensure that the MOSFET can operate reliably under high noise or unstable power supply conditions.
- **RDS(ON) (On-resistance)**: 950mΩ @ VGS = 10V
At VGS = 10V, the on-resistance of SIHU5N50D-E3-VB is 950mΩ. Although this value is slightly higher than some low on-resistance MOSFETs, it still provides high efficiency and reduces heat loss in medium current applications.
- **ID (Maximum drain current)**: 5A
The maximum drain current is 5A, which is suitable for low to medium power supplies or load drives. Suitable for load current requirements below 5A, such as power management, motor control, etc.
- **VDS (maximum drain-source voltage)**: 650V
This MOSFET supports a drain-source voltage of up to 650V, enabling it to operate stably in high-voltage power supply applications. Suitable for applications such as power conversion and switching power supplies that require higher voltage resistance.
- **VGS (maximum gate-source voltage)**: ±30V
Supports gate-source voltage of ±30V, is compatible with a variety of standard drive circuits, and can still operate stably in complex circuits.
- **Vth (threshold voltage)**: 3.5V
At a gate-source voltage of 3.5V, the MOSFET starts to turn on. This higher threshold voltage design helps ensure that the MOSFET can operate reliably under high noise or unstable power supply conditions.
- **RDS(ON) (On-resistance)**: 950mΩ @ VGS = 10V
At VGS = 10V, the on-resistance of SIHU5N50D-E3-VB is 950mΩ. Although this value is slightly higher than some low on-resistance MOSFETs, it still provides high efficiency and reduces heat loss in medium current applications.
- **ID (Maximum drain current)**: 5A
The maximum drain current is 5A, which is suitable for low to medium power supplies or load drives. Suitable for load current requirements below 5A, such as power management, motor control, etc.
Domain and module applications：
SIHU5N50D-E3-VB MOSFET Application Examples
1. **Power Conversion System**:
SIHU5N50D-E3-VB can be used in high voltage power conversion systems, such as AC-DC converters, DC-DC power converters, etc. Due to its high withstand voltage of 650V and medium on-resistance, this MOSFET can effectively carry higher voltage and medium current loads in power conversion, while providing lower energy loss, improving power efficiency and stability.
2. **Motor Drive Control**:
In motor control applications, SIHU5N50D-E3-VB can be used as a switching element to drive the motor or control the speed of the motor. Its 650V drain-source voltage carrying capacity and low on-resistance are suitable for medium current and higher voltage motor drive applications, such as power tools, motor control systems and electric vehicle drives.
3. **Switching Power Supply (SMPS)**:
SIHU5N50D-E3-VB excels in switching power supplies, especially where higher voltages are required but lower load currents are required. It can be used for high-frequency power conversion in applications such as power adapters, power factor correction circuits (PFC), and more. By reducing conduction losses, this MOSFET can improve system efficiency and reduce heat generation.
4. **Inverters and Uninterruptible Power Supplies (UPS)**:
In inverters (such as solar inverters, wind inverters) and UPS (uninterruptible power supply) systems, SIHU5N50D-E3-VB can operate stably and provide efficient power conversion. Its 650V voltage carrying capacity enables it to cope with high voltage outputs in inverters and UPS, while its 950mΩ on-resistance ensures efficient operation of the system.
5. **Industrial Automation and Control Systems**:
SIHU5N50D-E3-VB can be used to drive various loads in industrial automation systems, such as automated motor drives, sensor modules, and actuator controls. Its high-voltage carrying capacity and relatively high switching speed make it suitable for high-voltage power management and load switching applications in industrial environments.
6. **Battery Management System (BMS)**:
In battery management systems, especially in the charge and discharge management of high-voltage battery packs, SIHU5N50D-E3-VB can ensure the safe and stable operation of the system by effectively controlling the charging and discharging process of the battery. Its high voltage capability and good switching performance are suitable for battery management in electric vehicles and energy storage systems.
1. **Power Conversion System**:
SIHU5N50D-E3-VB can be used in high voltage power conversion systems, such as AC-DC converters, DC-DC power converters, etc. Due to its high withstand voltage of 650V and medium on-resistance, this MOSFET can effectively carry higher voltage and medium current loads in power conversion, while providing lower energy loss, improving power efficiency and stability.
2. **Motor Drive Control**:
In motor control applications, SIHU5N50D-E3-VB can be used as a switching element to drive the motor or control the speed of the motor. Its 650V drain-source voltage carrying capacity and low on-resistance are suitable for medium current and higher voltage motor drive applications, such as power tools, motor control systems and electric vehicle drives.
3. **Switching Power Supply (SMPS)**:
SIHU5N50D-E3-VB excels in switching power supplies, especially where higher voltages are required but lower load currents are required. It can be used for high-frequency power conversion in applications such as power adapters, power factor correction circuits (PFC), and more. By reducing conduction losses, this MOSFET can improve system efficiency and reduce heat generation.
4. **Inverters and Uninterruptible Power Supplies (UPS)**:
In inverters (such as solar inverters, wind inverters) and UPS (uninterruptible power supply) systems, SIHU5N50D-E3-VB can operate stably and provide efficient power conversion. Its 650V voltage carrying capacity enables it to cope with high voltage outputs in inverters and UPS, while its 950mΩ on-resistance ensures efficient operation of the system.
5. **Industrial Automation and Control Systems**:
SIHU5N50D-E3-VB can be used to drive various loads in industrial automation systems, such as automated motor drives, sensor modules, and actuator controls. Its high-voltage carrying capacity and relatively high switching speed make it suitable for high-voltage power management and load switching applications in industrial environments.
6. **Battery Management System (BMS)**:
In battery management systems, especially in the charge and discharge management of high-voltage battery packs, SIHU5N50D-E3-VB can ensure the safe and stable operation of the system by effectively controlling the charging and discharging process of the battery. Its high voltage capability and good switching performance are suitable for battery management in electric vehicles and energy storage systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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