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SIHS36N50D-E3-VB Product details
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SIHS36N50D-E3-VB MOSFET Product Introduction
SIHS36N50D-E3-VB is a high voltage, high current carrying capacity unipolar N-type MOSFET, using TO-3P package, designed for high voltage and high current systems. With a maximum drain-source voltage (VDS) of 600V and a maximum drain current of 47A, this MOSFET is suitable for power electronics applications that need to withstand high voltage and high current. Its maximum gate-source voltage (VGS) is 30V, and the gate threshold voltage (Vth) is 3.5V, which can work stably at a lower gate voltage. The on-resistance (RDS(ON)) of SIHS36N50D-E3-VB is 60mΩ@VGS=10V, with low power loss and good switching performance, suitable for high-efficiency switching circuits. Using SJ_Multi-EPI technology, it provides excellent switching characteristics, making it perform well in high-frequency and high-current applications, and is widely used in power management, industrial control, automotive electronics and other fields.
SIHS36N50D-E3-VB is a high voltage, high current carrying capacity unipolar N-type MOSFET, using TO-3P package, designed for high voltage and high current systems. With a maximum drain-source voltage (VDS) of 600V and a maximum drain current of 47A, this MOSFET is suitable for power electronics applications that need to withstand high voltage and high current. Its maximum gate-source voltage (VGS) is 30V, and the gate threshold voltage (Vth) is 3.5V, which can work stably at a lower gate voltage. The on-resistance (RDS(ON)) of SIHS36N50D-E3-VB is 60mΩ@VGS=10V, with low power loss and good switching performance, suitable for high-efficiency switching circuits. Using SJ_Multi-EPI technology, it provides excellent switching characteristics, making it perform well in high-frequency and high-current applications, and is widely used in power management, industrial control, automotive electronics and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | 60mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
SIHS36N50D-E3-VB MOSFET Detailed parameter description
- **Package type**: TO-3P
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 60mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 47A
- **Technology type**: SJ_Multi-EPI technology
- **Operating temperature range**: Typically -55°C to +150°C (determined according to the product manual)
- **Package type**: TO-3P
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 60mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 47A
- **Technology type**: SJ_Multi-EPI technology
- **Operating temperature range**: Typically -55°C to +150°C (determined according to the product manual)
Domain and module applications：
SIHS36N50D-E3-VB MOSFET Typical Applications and Modules
1. **Power Conversion and Power Management**
SIHS36N50D-E3-VB is particularly suitable for high voltage power conversion systems such as AC-DC power supplies, power supply units (PSUs), etc. In these applications, the MOSFET can withstand a high voltage of 600V while providing 47A of leakage current support, suitable for high power power management, DC-AC conversion, and battery charge and discharge control. With low on-resistance (60mΩ), MOSFET can effectively reduce power loss and improve the energy efficiency of the system.
2. **Industrial Motor Control System**
In industrial motor drive systems, SIHS36N50D-E3-VB is used as a switching element, which can withstand large currents (up to 47A) and work stably at high voltages (up to 600V). It is suitable for systems such as variable frequency drives and servo motor drives. It can efficiently control the start and stop, speed regulation and overload protection of the motor, and improve the efficiency and stability of the entire industrial automation system.
3. **Electric vehicles and charging stations**
In the power management system of electric vehicles (EVs) and charging stations, SIHS36N50D-E3-VB can handle the charging process of high voltage and current, especially in fast charging stations and battery management systems (BMS). Through its high current carrying capacity, it can optimize the battery charging rate and improve the charging efficiency, especially in the battery pack management and control system of electric vehicles, ensuring the stability and safety of the charging process.
4. **Solar inverters and renewable energy systems**
SIHS36N50D-E3-VB can also play an important role in solar inverters and wind power generation systems. In these inverter applications, high voltage carrying capacity (maximum 600V) and high current carrying capacity (maximum 47A) are required. This MOSFET can ensure efficient conversion of DC to AC and is widely used in DC-AC conversion of solar power generation systems to optimize energy conversion efficiency and reduce losses.
5. **Home appliances and high-power switching applications**
In some high-power home appliances (such as air conditioners, refrigerators, washing machines, etc.), SIHS36N50D-E3-VB is used as a switching element to efficiently manage power and control motors. Due to its excellent conduction characteristics and low RDS(ON), power losses can be reduced and overall equipment efficiency can be improved in these applications.
6. **Power electronics and high-frequency switching applications**
In high-frequency switching applications such as power conditioners, power converters, transformers, etc., SIHS36N50D-E3-VB MOSFET has excellent switching performance and can operate under fast switching conditions. Its low on-resistance and excellent switching characteristics enable it to provide reliable and efficient performance in power conversion applications that require frequent switching.
1. **Power Conversion and Power Management**
SIHS36N50D-E3-VB is particularly suitable for high voltage power conversion systems such as AC-DC power supplies, power supply units (PSUs), etc. In these applications, the MOSFET can withstand a high voltage of 600V while providing 47A of leakage current support, suitable for high power power management, DC-AC conversion, and battery charge and discharge control. With low on-resistance (60mΩ), MOSFET can effectively reduce power loss and improve the energy efficiency of the system.
2. **Industrial Motor Control System**
In industrial motor drive systems, SIHS36N50D-E3-VB is used as a switching element, which can withstand large currents (up to 47A) and work stably at high voltages (up to 600V). It is suitable for systems such as variable frequency drives and servo motor drives. It can efficiently control the start and stop, speed regulation and overload protection of the motor, and improve the efficiency and stability of the entire industrial automation system.
3. **Electric vehicles and charging stations**
In the power management system of electric vehicles (EVs) and charging stations, SIHS36N50D-E3-VB can handle the charging process of high voltage and current, especially in fast charging stations and battery management systems (BMS). Through its high current carrying capacity, it can optimize the battery charging rate and improve the charging efficiency, especially in the battery pack management and control system of electric vehicles, ensuring the stability and safety of the charging process.
4. **Solar inverters and renewable energy systems**
SIHS36N50D-E3-VB can also play an important role in solar inverters and wind power generation systems. In these inverter applications, high voltage carrying capacity (maximum 600V) and high current carrying capacity (maximum 47A) are required. This MOSFET can ensure efficient conversion of DC to AC and is widely used in DC-AC conversion of solar power generation systems to optimize energy conversion efficiency and reduce losses.
5. **Home appliances and high-power switching applications**
In some high-power home appliances (such as air conditioners, refrigerators, washing machines, etc.), SIHS36N50D-E3-VB is used as a switching element to efficiently manage power and control motors. Due to its excellent conduction characteristics and low RDS(ON), power losses can be reduced and overall equipment efficiency can be improved in these applications.
6. **Power electronics and high-frequency switching applications**
In high-frequency switching applications such as power conditioners, power converters, transformers, etc., SIHS36N50D-E3-VB MOSFET has excellent switching performance and can operate under fast switching conditions. Its low on-resistance and excellent switching characteristics enable it to provide reliable and efficient performance in power conversion applications that require frequent switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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