Product introduction：
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SIHP12N50C-VB is a single N-channel MOSFET in TO220 package, designed for high voltage applications, with a drain-source voltage (VDS) of 650V and a maximum gate-source voltage (VGS) of 30V. Its threshold voltage is 3.5V, and it can start to conduct at a lower gate voltage, which is suitable for low gate voltage control circuits. The on-resistance (RDS(ON)) of the MOSFET is 500mΩ (VGS = 10V), which is suitable for high-power, low-loss switching applications. The SJ_Multi-EPI technology it adopts can provide excellent thermal performance while ensuring high efficiency, and is suitable for a variety of power management and control applications. This MOSFET is widely used in home appliances, industrial automation, power conversion and other high voltage applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
9A |
|
|
500mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
9A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
9A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
**
- **Model**: SIHP12N50C-VB
- **Package Type**: TO220
- **Configuration**: Single N-channel MOSFET
- **Drain-Source Voltage (VDS)**: 650V
This MOSFET can withstand a drain-source voltage of up to 650V, suitable for switching applications in high-voltage environments.
- **Gate-Source Voltage (VGS)**: ±30V
The maximum gate-source voltage is ±30V, which can operate stably under higher control voltages.
- **Threshold Voltage (Vth)**: 3.5V
The threshold voltage is 3.5V, which means that when the gate-source voltage exceeds this value, the MOSFET will start to conduct.
- **On-resistance (RDS(ON))**: 500mΩ (VGS = 10V)
At a gate voltage of 10V, the on-resistance is 500mΩ, suitable for high-power applications and keeps switching losses low.
- **Drainage current (ID)**: 9A
The maximum drain current of this MOSFET is 9A, which can meet the needs of medium and high power circuits.
- **Technology**: SJ_Multi-EPI
Using SJ_Multi-EPI technology, it has low on-resistance and excellent thermal performance, suitable for high-power switching applications.
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Domain and module applications：
Examples**
1. **Power Conversion Systems**
SIHP12N50C-VB is widely used in power management, especially in high-voltage DC-DC converters and AC-DC power conversion. Its high withstand voltage and moderate on-resistance give it a clear advantage in high-efficiency power conversion, which can reduce power loss and improve system performance.
2. **Home Appliance Control Systems**
In home appliance control systems, such as power management modules for air conditioners, electric refrigerators, and washing machines, this MOSFET can be used as a switching element for power regulation and motor control. Its high voltage withstand capability and low conduction loss ensure long-term efficient operation while ensuring the stability and safety of the appliance.
3. **Industrial Automation and Motor Drives**
In industrial automation, SIHP12N50C-VB can be applied to servo drives, motor controls, and other industrial power conversion systems, suitable for scenarios requiring higher current and voltage control. By reducing power consumption and heat loss, the reliability of the system is improved and the system heat dissipation requirements are reduced.
4. **Battery Charging Management and Electric Vehicles**
This MOSFET is used in the battery charging management system (BMS) for the control of high-voltage battery packs. It can stably carry large currents and effectively reduce losses during switching, which is suitable for battery management in the fields of electric vehicles, renewable energy storage systems, etc.
5. **High-voltage Switching Devices**
Due to its high drain-source voltage (650V), SIHP12N50C-VB is also suitable for high-voltage switching applications that require high withstand voltage and low losses, such as high-frequency conversion circuits, power conditioning devices, and adjustable voltage power supply systems. Such devices usually require MOSFETs to work stably under high voltage conditions to meet the requirements for efficiency and safety.
Through these applications, SIHP12N50C-VB has demonstrated its strong performance and diverse application potential in multiple fields such as power electronics, high-voltage power supplies, and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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