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SIHP10N40D-VB Product details

Product introduction:

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SIHP10N40D-VB is a high-performance N-type MOSFET in TO220 package, using SJ_Multi-EPI technology, designed for high-voltage power management and switch control applications. The device has a maximum drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, suitable for high voltage and high current applications. Its threshold voltage (Vth) is 3.5V, on-resistance (RDS(ON)) is 500mΩ (at VGS=10V), and has a maximum drain current (ID) of 9A. SIHP10N40D-VB is widely used in high-voltage power conversion, switching power supplies, inverters and other high-efficiency power control systems with its low on-resistance and high switching performance, and is suitable for electrical equipment and systems that require high efficiency and high reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 9A 500mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
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- **Package type**: TO220
- **Configuration**: Single channel N-type
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON)**: 500mΩ (VGS=10V)
- **ID (drain current)**: 9A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55℃ to +150℃

Domain and module applications:


SIHP10N40D-VB is a high-voltage N-type MOSFET suitable for a variety of high-voltage applications. Its maximum drain-source voltage reaches 650V, which is suitable for high-voltage power supply and power conversion fields. Its 500mΩ on-resistance makes the device have good conductivity and can maintain low power loss under high current operation, especially suitable for applications requiring high efficiency and high power density.

In **switching power supply** (SMPS), SIHP10N40D-VB can effectively handle high voltage and high current, and is widely used in industrial power supply, communication power supply, and home appliance power supply. Its high withstand voltage characteristics enable it to cope with high voltage input, and its low on-resistance effectively reduces power consumption and heat generation, improving the stability and efficiency of the overall power system.

**Inverter** is another major application area of SIHP10N40D-VB, especially in **solar inverter** and **UPS** (uninterruptible power supply system). This MOSFET has high voltage tolerance and can operate stably in high voltage and high frequency environments, ensuring that the inverter can efficiently convert DC to AC while improving the energy efficiency of the entire system.

In addition, this MOSFET is also widely used in industrial control applications such as **motor drives** and **power amplifiers**. Through its high-efficiency switching performance, the SIHP10N40D-VB can be used in power tools, electric vehicle drive systems, and industrial automation control, where it can effectively control current, provide stable operating performance, and reduce heat and power losses in the system.

Due to its high operating temperature range (-55℃ to +150℃), the SIHP10N40D-VB is suitable for harsh industrial and automotive environments and can operate normally under high temperature, high humidity and other extreme conditions.

In general, SIHP10N40D-VB is a MOSFET suitable for high-voltage power management and power conversion applications. It can provide efficient and reliable switching control for a variety of industrial, energy and home appliance fields, especially in high-voltage power supplies, inverters, motor drives and power amplifiers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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