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SIHLZ44S-VB Product details

Product introduction:

SIHLZ44S-VB MOSFET Detailed Product Introduction

**Product Name**: SIHLZ44S-VB
**Package Type**: TO263
**Configuration**: Unipolar N-channel
**Technology Type**: Trench technology
**Maximum Drain-Source Voltage (VDS)**: 60V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 1.7V
**On-Resistance (RDS(ON))**: 32mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 50A

**Product Overview**:
SIHLZ44S-VB is a high-performance N-channel MOSFET in TO263 package, designed for high power, high efficiency applications. Its maximum drain-source voltage is 60V and the drain current can reach 50A, which is very suitable for power management, switching power supply and motor control. This MOSFET uses Trench technology and has a low on-resistance (32mΩ @ VGS = 10V), which can effectively reduce power loss and improve energy efficiency under high load conditions. In addition, SIHLZ44S-VB has low switching losses and excellent thermal performance, and is suitable for electronic systems that require fast switching, low energy consumption and high reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 1.7V 50A 32mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 1.7V 50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 1.7V 50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
SIHLZ44S-VB MOSFET Detailed parameter description

- **VDS (maximum drain-source voltage)**: 60V
SIHLZ44S-VB has a maximum drain-source voltage of 60V, which is suitable for medium and low voltage power control, current regulation and load switching applications. It can withstand operating loads at most common voltage levels and is particularly suitable for power systems in the range of 48V to 60V.

- **VGS (maximum gate-source voltage)**: ±20V
This MOSFET supports a gate-source voltage of ±20V, has a high gate voltage tolerance, is compatible with common drive circuits, ensures stable operating performance, and adapts to a variety of gate drive conditions.

- **Vth (threshold voltage)**: 1.7V
The threshold voltage is 1.7V, which means that when the gate-source voltage exceeds 1.7V, the MOSFET will start to turn on. A lower threshold voltage helps speed up switching and is suitable for applications that require fast response.

- **RDS(ON) (On-resistance)**: 32mΩ @ VGS = 10V
At VGS = 10V, the on-resistance is 32mΩ, which means that in the on state, the power loss is very low, which is very important for high current and high frequency applications. Low on-resistance effectively reduces heat loss during device operation and improves efficiency.

- **ID (Maximum drain current)**: 50A
The maximum drain current of this MOSFET is 50A, which can meet the needs of high current loads and is suitable for use in high power power management systems, motor drives and other applications that require higher current carrying capacity.

Domain and module applications:

SIHLZ44S-VB MOSFET Application Examples

1. **Power Management System**:
SIHLZ44S-VB's low RDS(ON) and high current carrying capability make it ideal for use in power management modules such as DC-DC converters and AC-DC power adapters. In these applications, it can effectively regulate input and output voltages, providing efficient power conversion while reducing energy loss and heat generation.

2. **Motor Drive System**:
This MOSFET is particularly suitable for motor control circuits such as drive systems for power tools, home appliances, and electric vehicles. Its high current carrying capability enables it to stably control the start, run, and stop of the motor, while improving the efficiency of the motor system and reducing energy losses through low on-resistance.

3. **Battery Charger**:
In charger applications, SIHLZ44S-VB can act as a switching element to efficiently regulate the charging current. Its low RDS(ON) and high current handling capability are suitable for applications that require higher load currents, such as charging systems for power tools, e-bikes, and electric vehicles. Low on-resistance helps reduce heat generated during charging and improves charging efficiency.

4. **LED drive and lighting control**:
SIHLZ44S-VB can be used in LED drive circuits to provide stable current regulation to drive LED arrays. Its efficient switching performance and low power loss make it suitable for lighting control systems that require high efficiency, especially for applications in commercial and industrial lighting.

5. **Battery Management System**:
In the battery management system (BMS), SIHLZ44S-VB acts as a switching element to efficiently control the charging and discharging process of the battery. Its high current capability and low RDS(ON) characteristics are critical for managing large battery packs, especially for battery control in electric vehicles and renewable energy storage systems.

6. **Power Converters and Inverters**:
SIHLZ44S-VB is suitable for various power converters and inverters, such as solar inverters, UPS (Uninterruptible Power Supply) and power systems of power tools. Its 60V withstand voltage, 50A current capability and low on-resistance enable it to perform well in high-power applications, especially in environments that require high efficiency and long-term stable operation.

7. **High-efficiency switching power supplies and low-power modules**:
SIHLZ44S-VB is an ideal choice for high-efficiency switching power supplies and low-power modules. Its low on-resistance and fast switching characteristics can maintain efficient operation under high frequency and high load conditions, and are widely used in various consumer electronic devices, communication equipment and industrial control systems.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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