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SiHLZ24S-GE3-VB Product details
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1. Product Introduction (SiHLZ24S-GE3-VB)
SiHLZ24S-GE3-VB is a single N-channel MOSFET in TO263 package, designed for high-efficiency power conversion and power control applications. It has a maximum drain-source voltage (VDS) of 60V, a drain current (ID) of 50A, and a gate-source voltage (VGS) range of ±20V, suitable for applications requiring high current and high efficiency. This MOSFET uses Trench technology and has extremely low on-resistance (RDS(ON) of 32mΩ @ VGS = 10V), and excels in high-frequency switching and low power loss, ensuring stable operation of the device under high load conditions. SiHLZ24S-GE3-VB is suitable for power management, power tools, battery management systems (BMS) and automotive electronics, especially in high-efficiency power conversion and power switching.
SiHLZ24S-GE3-VB is a single N-channel MOSFET in TO263 package, designed for high-efficiency power conversion and power control applications. It has a maximum drain-source voltage (VDS) of 60V, a drain current (ID) of 50A, and a gate-source voltage (VGS) range of ±20V, suitable for applications requiring high current and high efficiency. This MOSFET uses Trench technology and has extremely low on-resistance (RDS(ON) of 32mΩ @ VGS = 10V), and excels in high-frequency switching and low power loss, ensuring stable operation of the device under high load conditions. SiHLZ24S-GE3-VB is suitable for power management, power tools, battery management systems (BMS) and automotive electronics, especially in high-efficiency power conversion and power switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description
- **Model**: SiHLZ24S-GE3-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Drain current (ID)**: 50A
- **Technology**: Trench technology
- **Maximum power dissipation**: Depending on the operating environment and heat dissipation conditions, it is usually closely related to the current and on-resistance
- **Operating temperature range**: -55°C to 150°C
- **Maximum pulsed drain current (IDM)**: 200A (for short duration pulse loads)
- **Gate charge (Qg)**: 200nC (for fast switching applications)
- **Model**: SiHLZ24S-GE3-VB
- **Package**: TO263
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 32mΩ @ VGS = 10V
- **Drain current (ID)**: 50A
- **Technology**: Trench technology
- **Maximum power dissipation**: Depending on the operating environment and heat dissipation conditions, it is usually closely related to the current and on-resistance
- **Operating temperature range**: -55°C to 150°C
- **Maximum pulsed drain current (IDM)**: 200A (for short duration pulse loads)
- **Gate charge (Qg)**: 200nC (for fast switching applications)
Domain and module applications：
3. Application Fields and Modules
#### Power Management and DC-DC Converters
SiHLZ24S-GE3-VB plays an important role in power management systems and DC-DC converters, especially in scenarios that require efficient conversion and low power loss. Due to its low on-resistance and high current carrying capacity, this MOSFET can significantly improve the efficiency of the power supply and reduce heat loss, and is suitable for various high-efficiency power modules such as switching power supplies, UPS power supplies, LED driver power supplies, etc.
#### Power Tools and Battery Management Systems
In power tools and battery management systems (BMS), SiHLZ24S-GE3-VB is widely used in power switching and battery charge and discharge management. Its high current carrying capacity and low on-resistance enable it to efficiently manage battery current and provide stable driving power for power tools, ensuring that they can work reliably under high loads. In addition, it can also optimize battery performance and extend battery life.
#### Automotive Electronics and Electric Vehicles (EV)
SiHLZ24S-GE3-VB is particularly important in automotive electronics, especially in the battery management and drive control systems of electric vehicles (EV) and hybrid electric vehicles (HEV). It can efficiently manage the charging and discharging process of the battery, provide reliable power conversion and driving capabilities, and ensure the power needs of the vehicle under various working conditions. At the same time, in the electric drive system of the car, SiHLZ24S-GE3-VB can ensure efficient and stable current conversion and distribution.
#### LED Lighting and Smart Home
SiHLZ24S-GE3-VB is also suitable for LED lighting systems and smart home controls. In LED drive applications, its low on-resistance helps improve system efficiency, reduce energy loss, and extend the service life of the equipment. In smart home systems, this MOSFET can be used to adjust voltage, control the on and off of lighting equipment, and adjust brightness to improve the response speed and stability of the system.
#### High-efficiency power switching applications
SiHLZ24S-GE3-VB is suitable for high-efficiency power switching applications that require high-frequency switching operations. In power converters, audio amplifiers, power supply systems and other fields, it can switch quickly, greatly reducing the energy loss of the system and improving the operating efficiency of the equipment. Its low on-resistance and high current capability enable it to perform well in high-load, high-frequency applications.
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**Summary**
SiHLZ24S-GE3-VB is a high-efficiency single N-channel MOSFET that has great advantages in multiple high-power applications due to its low on-resistance, high current carrying capacity and high-efficiency Trench technology. Whether in power management, power tools, battery management systems or automotive electronics, it can provide excellent performance to ensure efficient and stable operation of the system.
#### Power Management and DC-DC Converters
SiHLZ24S-GE3-VB plays an important role in power management systems and DC-DC converters, especially in scenarios that require efficient conversion and low power loss. Due to its low on-resistance and high current carrying capacity, this MOSFET can significantly improve the efficiency of the power supply and reduce heat loss, and is suitable for various high-efficiency power modules such as switching power supplies, UPS power supplies, LED driver power supplies, etc.
#### Power Tools and Battery Management Systems
In power tools and battery management systems (BMS), SiHLZ24S-GE3-VB is widely used in power switching and battery charge and discharge management. Its high current carrying capacity and low on-resistance enable it to efficiently manage battery current and provide stable driving power for power tools, ensuring that they can work reliably under high loads. In addition, it can also optimize battery performance and extend battery life.
#### Automotive Electronics and Electric Vehicles (EV)
SiHLZ24S-GE3-VB is particularly important in automotive electronics, especially in the battery management and drive control systems of electric vehicles (EV) and hybrid electric vehicles (HEV). It can efficiently manage the charging and discharging process of the battery, provide reliable power conversion and driving capabilities, and ensure the power needs of the vehicle under various working conditions. At the same time, in the electric drive system of the car, SiHLZ24S-GE3-VB can ensure efficient and stable current conversion and distribution.
#### LED Lighting and Smart Home
SiHLZ24S-GE3-VB is also suitable for LED lighting systems and smart home controls. In LED drive applications, its low on-resistance helps improve system efficiency, reduce energy loss, and extend the service life of the equipment. In smart home systems, this MOSFET can be used to adjust voltage, control the on and off of lighting equipment, and adjust brightness to improve the response speed and stability of the system.
#### High-efficiency power switching applications
SiHLZ24S-GE3-VB is suitable for high-efficiency power switching applications that require high-frequency switching operations. In power converters, audio amplifiers, power supply systems and other fields, it can switch quickly, greatly reducing the energy loss of the system and improving the operating efficiency of the equipment. Its low on-resistance and high current capability enable it to perform well in high-load, high-frequency applications.
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**Summary**
SiHLZ24S-GE3-VB is a high-efficiency single N-channel MOSFET that has great advantages in multiple high-power applications due to its low on-resistance, high current carrying capacity and high-efficiency Trench technology. Whether in power management, power tools, battery management systems or automotive electronics, it can provide excellent performance to ensure efficient and stable operation of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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