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SIHLR120TL-E3-VB Product details
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SIHLR120TL-E3-VB is a single N-channel MOSFET in TO252 package, designed for high-efficiency and high-reliability power conversion applications. The MOSFET has a drain-source voltage (VDS) of 100V and can withstand a continuous drain current of up to 15A. Its gate-source voltage (VGS) is up to ±20V, suitable for a variety of control and drive circuits. By using Trench technology, the SIHLR120TL-E3-VB MOSFET provides a relatively low on-resistance (RDS(ON) = 114mΩ @VGS = 10V) while ensuring switching speed and voltage resistance characteristics. It is suitable for power management systems that require efficient power switching and stable performance, such as DC-DC converters, motor drive circuits and battery management systems.
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SIHLR120TL-E3-VB is a single N-channel MOSFET in TO252 package, designed for high-efficiency and high-reliability power conversion applications. The MOSFET has a drain-source voltage (VDS) of 100V and can withstand a continuous drain current of up to 15A. Its gate-source voltage (VGS) is up to ±20V, suitable for a variety of control and drive circuits. By using Trench technology, the SIHLR120TL-E3-VB MOSFET provides a relatively low on-resistance (RDS(ON) = 114mΩ @VGS = 10V) while ensuring switching speed and voltage resistance characteristics. It is suitable for power management systems that require efficient power switching and stable performance, such as DC-DC converters, motor drive circuits and battery management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
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- **Model**: SIHLR120TL-E3-VB
- **Package type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 100V
Suitable for working in a voltage environment with a maximum voltage of 100V.
- **Gate-source voltage (VGS)**: ±20V
The maximum gate drive voltage is ±20V, ensuring stable operation under high voltage control.
- **Threshold voltage (Vth)**: 1.8V
The threshold voltage is 1.8V, which means that when the gate-source voltage exceeds this value, the MOSFET starts to turn on.
- **On-resistance (RDS(ON))**: 114mΩ (VGS = 10V)
When the gate voltage is 10V, the on-resistance is 114mΩ, ensuring low loss and high efficiency.
- **Drainage current (ID)**: 15A
MOSFET can withstand a maximum continuous leakage current of 15A, suitable for various high-power applications.
- **Technology**: Trench
The use of Trench technology improves the conduction performance of MOSFET and reduces the on-resistance.
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**
- **Model**: SIHLR120TL-E3-VB
- **Package type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 100V
Suitable for working in a voltage environment with a maximum voltage of 100V.
- **Gate-source voltage (VGS)**: ±20V
The maximum gate drive voltage is ±20V, ensuring stable operation under high voltage control.
- **Threshold voltage (Vth)**: 1.8V
The threshold voltage is 1.8V, which means that when the gate-source voltage exceeds this value, the MOSFET starts to turn on.
- **On-resistance (RDS(ON))**: 114mΩ (VGS = 10V)
When the gate voltage is 10V, the on-resistance is 114mΩ, ensuring low loss and high efficiency.
- **Drainage current (ID)**: 15A
MOSFET can withstand a maximum continuous leakage current of 15A, suitable for various high-power applications.
- **Technology**: Trench
The use of Trench technology improves the conduction performance of MOSFET and reduces the on-resistance.
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Domain and module applications：
Examples**
1. **Power Management System**
This MOSFET can be used in DC-DC converters, power adapters and voltage regulators as a switching element to achieve efficient power conversion. Due to its low RDS(ON) and high current handling capability, it can provide high efficiency while reducing the heat loss of the system.
2. **Motor Drive Circuit**
In motor drive systems, SIHLR120TL-E3-VB can be used to drive small power DC motors (such as power tools, toys or small appliances). Its fast switching performance and low on-resistance help improve drive efficiency and extend battery life.
3. **Battery Management System (BMS)**
In battery management systems, this MOSFET can be used as a switch control module to regulate the battery charging and discharging process to ensure safety and efficiency. The high current handling capability makes it particularly suitable for battery pack management in electric vehicles or renewable energy systems.
4. **Power amplifier and RF applications**
This MOSFET is also suitable for radio frequency (RF) power amplifiers that require high voltage and high current, and is widely used in wireless communications, radar, and other high-power signal transmission systems.
5. **Automotive electronic systems**
In automotive electronic modules, SIHLR120TL-E3-VB can be used as a switching element in systems such as electric power steering, lighting control, and electronic parking brakes, providing stable current switching capabilities and high temperature resistance to ensure the reliability and safety of automotive systems.
Through these applications, SIHLR120TL-E3-VB MOSFET adapts to a variety of power and control systems, and can meet the high-efficiency needs of industrial, automotive, consumer electronics, and other fields.
1. **Power Management System**
This MOSFET can be used in DC-DC converters, power adapters and voltage regulators as a switching element to achieve efficient power conversion. Due to its low RDS(ON) and high current handling capability, it can provide high efficiency while reducing the heat loss of the system.
2. **Motor Drive Circuit**
In motor drive systems, SIHLR120TL-E3-VB can be used to drive small power DC motors (such as power tools, toys or small appliances). Its fast switching performance and low on-resistance help improve drive efficiency and extend battery life.
3. **Battery Management System (BMS)**
In battery management systems, this MOSFET can be used as a switch control module to regulate the battery charging and discharging process to ensure safety and efficiency. The high current handling capability makes it particularly suitable for battery pack management in electric vehicles or renewable energy systems.
4. **Power amplifier and RF applications**
This MOSFET is also suitable for radio frequency (RF) power amplifiers that require high voltage and high current, and is widely used in wireless communications, radar, and other high-power signal transmission systems.
5. **Automotive electronic systems**
In automotive electronic modules, SIHLR120TL-E3-VB can be used as a switching element in systems such as electric power steering, lighting control, and electronic parking brakes, providing stable current switching capabilities and high temperature resistance to ensure the reliability and safety of automotive systems.
Through these applications, SIHLR120TL-E3-VB MOSFET adapts to a variety of power and control systems, and can meet the high-efficiency needs of industrial, automotive, consumer electronics, and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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