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SIHLR024TL-E3-VB Product details
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SIHLR024TL-E3-VB is a high-performance N-type MOSFET in TO252 package, using Trench technology, designed for medium and low voltage applications. With a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, the device is suitable for a wide range of power management and switching control systems. Its threshold voltage (Vth) is 1.7V, the on-resistance (RDS(ON)) is 73mΩ at VGS=10V, and it has a large maximum drain current (ID) of 18A. With its low on-resistance and high switching efficiency, SIHLR024TL-E3-VB excels in applications such as power conversion, motor drive, LED drive and battery management, and can improve system efficiency while reducing energy loss and heat generation.
**
SIHLR024TL-E3-VB is a high-performance N-type MOSFET in TO252 package, using Trench technology, designed for medium and low voltage applications. With a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, the device is suitable for a wide range of power management and switching control systems. Its threshold voltage (Vth) is 1.7V, the on-resistance (RDS(ON)) is 73mΩ at VGS=10V, and it has a large maximum drain current (ID) of 18A. With its low on-resistance and high switching efficiency, SIHLR024TL-E3-VB excels in applications such as power conversion, motor drive, LED drive and battery management, and can improve system efficiency while reducing energy loss and heat generation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
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- **Package type**: TO252
- **Configuration**: Single channel N-type
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**: 85mΩ (VGS=4.5V)
- **RDS(ON)**: 73mΩ (VGS=10V)
- **ID (drain current)**: 18A
- **Technology**: Trench
- **Operating temperature range**: -55℃ to +150℃
- **Package type**: TO252
- **Configuration**: Single channel N-type
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**: 85mΩ (VGS=4.5V)
- **RDS(ON)**: 73mΩ (VGS=10V)
- **ID (drain current)**: 18A
- **Technology**: Trench
- **Operating temperature range**: -55℃ to +150℃
Domain and module applications：
SIHLR024TL-E3-VB is a MOSFET that is very suitable for medium and low voltage applications, especially in the field of power management and power conversion. Its 60V drain-source voltage makes it very suitable for battery-driven power systems, DC-DC converters, AC-DC power adapters and other devices. Low on-resistance (73mΩ@VGS=10V) and high leakage current (18A) enable it to achieve high-efficiency, high-power density power conversion, and effectively reduce power loss and heat generation, and improve the reliability and service life of the overall system.
In motor drive systems, SIHLR024TL-E3-VB can be used in motor control modules in low-power power tools, electric appliances, and automation control systems. Its low on-resistance ensures low power consumption and high efficiency of the drive system, adapts to a variety of high-frequency switching operations, and effectively reduces overheating problems.
This MOSFET is also suitable for LED driving and battery management systems. As a switching element in an LED driver, SIHLR024TL-E3-VB can achieve stable and efficient switch control, improving the power conversion efficiency of LED lighting systems. In battery management systems, it can provide high-current and low-power battery charging and discharging control to ensure safe and efficient operation of the battery.
In addition, due to its operating temperature range of -55℃ to +150℃, SIHLR024TL-E3-VB can be widely used in industrial equipment, automotive electronics, and electrical equipment in extreme working environments that require high temperature resistance and high reliability.
In general, SIHLR024TL-E3-VB is an efficient and reliable medium and low voltage MOSFET suitable for various power management, power conversion, drive control and battery management applications, especially in power tools, LED lighting, battery management systems and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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