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SIHLL110T-E3-VB Product details
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SIHLL110T-E3-VB MOSFET Detailed Product Introduction
**Product Name**: SIHLL110T-E3-VB
**Package Type**: SOT223
**Configuration**: Unipolar N-channel
**Technology Type**: Trench technology
**Maximum Drain-Source Voltage (VDS)**: 100V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 1.8V
**On-Resistance (RDS(ON))**: 100mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 5A
**Product Overview**:
SIHLL110T-E3-VB is a high-performance N-channel MOSFET in SOT223 package, designed for small and medium power switching applications. With a maximum drain-source voltage of 100V and a drain current capability of 5A, it is ideal for low-power power management, signal conditioning, and load control applications that require lower on-resistance and high efficiency. This MOSFET uses Trench technology to provide a low RDS(ON) value (100mΩ @ VGS = 10V), which significantly reduces power losses and improves the overall energy efficiency of the system. Due to its small SOT223 package, the SIHLL110T-E3-VB can be widely used in space-constrained electronic products that require high efficiency.
**Product Name**: SIHLL110T-E3-VB
**Package Type**: SOT223
**Configuration**: Unipolar N-channel
**Technology Type**: Trench technology
**Maximum Drain-Source Voltage (VDS)**: 100V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 1.8V
**On-Resistance (RDS(ON))**: 100mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 5A
**Product Overview**:
SIHLL110T-E3-VB is a high-performance N-channel MOSFET in SOT223 package, designed for small and medium power switching applications. With a maximum drain-source voltage of 100V and a drain current capability of 5A, it is ideal for low-power power management, signal conditioning, and load control applications that require lower on-resistance and high efficiency. This MOSFET uses Trench technology to provide a low RDS(ON) value (100mΩ @ VGS = 10V), which significantly reduces power losses and improves the overall energy efficiency of the system. Due to its small SOT223 package, the SIHLL110T-E3-VB can be widely used in space-constrained electronic products that require high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
SIHLL110T-E3-VB MOSFET Detailed parameter description
- **VDS (maximum drain-source voltage)**: 100V
SIHLL110T-E3-VB has a maximum drain-source voltage of 100V, which is suitable for use in medium voltage power management and control circuits. It can support general industrial and consumer electronics applications such as DC-DC converters, power management modules, etc.
- **VGS (maximum gate-source voltage)**: ±20V
The MOSFET supports a gate-source voltage of ±20V, ensuring compatibility with most common drive circuits, providing a wide range of drive voltage tolerance, and ensuring stable switching performance.
- **Vth (threshold voltage)**: 1.8V
The threshold voltage is 1.8V, which means that the MOSFET can be turned on at a lower gate voltage, which is suitable for circuits that require fast response and is conducive to fast turn-on under low gate voltage conditions.
- **RDS(ON) (on-resistance)**: 100mΩ @ VGS = 10V
When the gate-source voltage is 10V, the on-resistance of SIHLL110T-E3-VB is 100mΩ, which means it has very low power loss characteristics and can effectively reduce energy loss in the on state. Low on-resistance is critical to improving efficiency and reducing heat, especially for high-frequency and low-power applications.
- **ID (maximum drain current)**: 5A
The maximum drain current of this MOSFET is 5A, which is suitable for medium power loads such as small power management circuits, chargers, LED drivers, etc. The current capability of 5A can meet the needs of most low-power drive and control applications.
- **VDS (maximum drain-source voltage)**: 100V
SIHLL110T-E3-VB has a maximum drain-source voltage of 100V, which is suitable for use in medium voltage power management and control circuits. It can support general industrial and consumer electronics applications such as DC-DC converters, power management modules, etc.
- **VGS (maximum gate-source voltage)**: ±20V
The MOSFET supports a gate-source voltage of ±20V, ensuring compatibility with most common drive circuits, providing a wide range of drive voltage tolerance, and ensuring stable switching performance.
- **Vth (threshold voltage)**: 1.8V
The threshold voltage is 1.8V, which means that the MOSFET can be turned on at a lower gate voltage, which is suitable for circuits that require fast response and is conducive to fast turn-on under low gate voltage conditions.
- **RDS(ON) (on-resistance)**: 100mΩ @ VGS = 10V
When the gate-source voltage is 10V, the on-resistance of SIHLL110T-E3-VB is 100mΩ, which means it has very low power loss characteristics and can effectively reduce energy loss in the on state. Low on-resistance is critical to improving efficiency and reducing heat, especially for high-frequency and low-power applications.
- **ID (maximum drain current)**: 5A
The maximum drain current of this MOSFET is 5A, which is suitable for medium power loads such as small power management circuits, chargers, LED drivers, etc. The current capability of 5A can meet the needs of most low-power drive and control applications.
Domain and module applications：
SIHLL110T-E3-VB MOSFET Application Examples
1. **DC-DC Converter**:
SIHLL110T-E3-VB's low on-resistance and 100V withstand voltage make it ideal for use in DC-DC converters to efficiently convert input voltage to the desired output voltage. Its 5A drain current capability is suitable for use in low- to medium-power converters of multiple voltage levels, and is particularly suitable for power supply designs that require compact packaging and high efficiency.
2. **Battery Charging Management**:
In battery charger circuits, SIHLL110T-E3-VB can be used as a switching element responsible for regulating the battery charging process. Its low RDS(ON) characteristics reduce energy loss and heat generation, improve charging efficiency, and can accommodate a wide range of battery voltage and current requirements. It is particularly suitable for charging management in smartphones, tablets, and portable devices.
3. **LED Driver**:
SIHLL110T-E3-VB can be used in LED drivers to drive LED lamps by efficiently regulating current. Its low on-resistance and efficient switching performance enable effective improvement of efficiency, reduction of energy waste, reduction of heat loss and extension of equipment life in LED lighting applications.
4. **Power Tools and Consumer Electronics**:
In power tools, portable devices and consumer electronics, SIHLL110T-E3-VB can be used as a power switch for load control and current regulation. Its 5A drain current carrying capability and compact SOT223 package make it an ideal choice for space-constrained applications, especially in small appliances, personal electronic devices and handheld tools.
5. **Small Motor Control**:
This MOSFET can be widely used in low-power motor control circuits such as fans, power tools, pumps, etc. Its on-resistance and withstand voltage characteristics enable it to provide efficient, low-loss control during the drive and start-stop process of the motor, optimizing the performance of the motor.
6. **Signal switch and linear amplifier**:
SIHLL110T-E3-VB is also suitable for signal switching circuits and low-power amplifier applications. Its efficient switching characteristics and low on-resistance enable it to operate stably at high frequencies, making it suitable for switching signal transmission, data line control, and low-power amplifier circuits.
7. **Automation control system**:
In the field of industrial automation, SIHLL110T-E3-VB is suitable for microcontroller and sensor drive circuits, and is used as a power switching element. Its high efficiency performance can meet the control and adjustment accuracy requirements of automation equipment, and is widely used in robots, elevator control systems, temperature control equipment, etc.
1. **DC-DC Converter**:
SIHLL110T-E3-VB's low on-resistance and 100V withstand voltage make it ideal for use in DC-DC converters to efficiently convert input voltage to the desired output voltage. Its 5A drain current capability is suitable for use in low- to medium-power converters of multiple voltage levels, and is particularly suitable for power supply designs that require compact packaging and high efficiency.
2. **Battery Charging Management**:
In battery charger circuits, SIHLL110T-E3-VB can be used as a switching element responsible for regulating the battery charging process. Its low RDS(ON) characteristics reduce energy loss and heat generation, improve charging efficiency, and can accommodate a wide range of battery voltage and current requirements. It is particularly suitable for charging management in smartphones, tablets, and portable devices.
3. **LED Driver**:
SIHLL110T-E3-VB can be used in LED drivers to drive LED lamps by efficiently regulating current. Its low on-resistance and efficient switching performance enable effective improvement of efficiency, reduction of energy waste, reduction of heat loss and extension of equipment life in LED lighting applications.
4. **Power Tools and Consumer Electronics**:
In power tools, portable devices and consumer electronics, SIHLL110T-E3-VB can be used as a power switch for load control and current regulation. Its 5A drain current carrying capability and compact SOT223 package make it an ideal choice for space-constrained applications, especially in small appliances, personal electronic devices and handheld tools.
5. **Small Motor Control**:
This MOSFET can be widely used in low-power motor control circuits such as fans, power tools, pumps, etc. Its on-resistance and withstand voltage characteristics enable it to provide efficient, low-loss control during the drive and start-stop process of the motor, optimizing the performance of the motor.
6. **Signal switch and linear amplifier**:
SIHLL110T-E3-VB is also suitable for signal switching circuits and low-power amplifier applications. Its efficient switching characteristics and low on-resistance enable it to operate stably at high frequencies, making it suitable for switching signal transmission, data line control, and low-power amplifier circuits.
7. **Automation control system**:
In the field of industrial automation, SIHLL110T-E3-VB is suitable for microcontroller and sensor drive circuits, and is used as a power switching element. Its high efficiency performance can meet the control and adjustment accuracy requirements of automation equipment, and is widely used in robots, elevator control systems, temperature control equipment, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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