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SIHLIZ24G-E3-VB Product details

Product introduction:

SIHLIZ24G-E3-VB Product Introduction

**SIHLIZ24G-E3-VB** is a **unipolar N-channel MOSFET** in a **TO220F** package with excellent electrical performance, especially suitable for applications requiring high current and low on-resistance. The **maximum drain-source voltage (VDS)** of this MOSFET is **60V**, and its **maximum drain current (ID)** can reach **45A**, which makes it suitable for high power density power management, motor drive and load switching applications. With its low **on-resistance (RDS(ON))**, which is **27mΩ** at **VGS=10V**, SIHLIZ24G-E3-VB has obvious advantages in improving switching efficiency, reducing power consumption and optimizing thermal management. Using **Trench technology**, this MOSFET provides higher performance and lower switching losses, making it an ideal choice for high-efficiency, low-loss power systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 60V 1.7V 45A 27mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 60V 1.7V 45A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 60V 1.7V 45A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
SIHLIZ24G-E3-VB Detailed parameter description

- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 27mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 45A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Maximum power consumption**: 150W (reference value)

Domain and module applications:

Applications and modules

1. **Power management system**
SIHLIZ24G-E3-VB can be used in power management systems such as **switching power supplies (SMPS)** and **DC-DC converters**. Its **low RDS(ON)** (27mΩ) helps reduce energy loss during power conversion and improves system efficiency. This makes it very suitable for **medium and high power power supplies**, such as **industrial power supplies, consumer electronics power adapters** and **battery-powered systems**, which can effectively improve energy efficiency and reduce heat dissipation.

2. **Motor drive system**
This MOSFET has significant advantages in **motor drive** applications, especially **brushless DC motor (BLDC) drive systems**. The **high current carrying capacity (45A)** and **low on-resistance** of the MOSFET make it suitable for high-efficiency motor control, which can smoothly start, accelerate and adjust the speed of the motor, and is suitable for **power tools, fans, electric vehicles, etc**. In addition, its **high switching frequency characteristics** can also ensure the response speed and stability of the motor drive system.

3. **Automotive electronics**
In **automotive electronics** systems, SIHLIZ24G-E3-VB can be used for **on-board power systems**, **LED lighting control** and **battery management systems**. Its **60V** maximum drain-source voltage and **45A** high current handling capability enable it to efficiently handle larger currents in automotive electrical systems, especially in current switching applications in **on-board batteries** and **electric vehicle charging systems**. The **low RDS(ON)** performance of MOSFET can effectively improve energy efficiency and reduce heat generation in the system.

4. **Load switch and switch control applications**
As a control element for load switches, SIHLIZ24G-E3-VB can be used to efficiently switch large current loads in **load control systems**. Its **low on-resistance** and **high current carrying capacity** make it ideal for **high-power devices**, such as **LED drivers, lighting control systems** and **battery-powered systems**. In these applications, it can precisely control the flow of current, reduce power losses and ensure efficient operation of the system.

5. **Battery management and charger system**
In **battery management system (BMS)**, SIHLIZ24G-E3-VB can be used for switching control of battery charging and discharging. It can achieve efficient charging and discharging process through its **low on-resistance** and **high current capability**, prolong battery life and ensure the stability of battery system. It is especially suitable for battery management modules in **electric vehicles, power tools, UPS systems**.

6. **Consumer electronics and portable devices**
In **consumer electronics** and **portable devices**, SIHLIZ24G-E3-VB can be used for **high-efficiency power management**, such as providing optimized power conversion and current switching functions for **smartphones, laptops, tablets, etc.** Its **low on-resistance** and **high switching frequency characteristics** ensure that the device can operate efficiently for a long time, reduce battery consumption and improve device performance.

7. **Power inverters and photovoltaic systems**
Due to its **high current carrying capacity** and **low on-resistance**, SIHLIZ24G-E3-VB is very suitable for applications such as **photovoltaic inverters** and **power inverters**, helping to efficiently convert and control the flow of electricity. It can ensure current switching when the inverter is operating at high efficiency, reduce energy loss and improve the overall performance of the system, and is suitable for use in renewable energy fields such as **solar power generation** and **wind power generation**.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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