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SIHLI540G-VB Product details
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SIHLI540G-VB is a high-performance N-type MOSFET in TO220F package, using Trench technology, designed for medium voltage and high-performance applications. The device has a maximum drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, suitable for various medium-voltage power management and switch control systems. Its threshold voltage (Vth) is 1.8V, the on-resistance (RDS(ON)) is 86mΩ (at VGS=10V), and it has a large maximum drain current (ID) of 18A. SIHLI540G-VB has low on-resistance and excellent switching performance, and is particularly suitable for power conversion, drive circuits and battery management systems that require high efficiency and low power consumption.
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SIHLI540G-VB is a high-performance N-type MOSFET in TO220F package, using Trench technology, designed for medium voltage and high-performance applications. The device has a maximum drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, suitable for various medium-voltage power management and switch control systems. Its threshold voltage (Vth) is 1.8V, the on-resistance (RDS(ON)) is 86mΩ (at VGS=10V), and it has a large maximum drain current (ID) of 18A. SIHLI540G-VB has low on-resistance and excellent switching performance, and is particularly suitable for power conversion, drive circuits and battery management systems that require high efficiency and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | 86mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 1.8V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
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- **Package type**: TO220F
- **Configuration**: Single channel N-type
- **VDS (drain-source voltage)**: 100V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.8V
- **RDS(ON)**: 86mΩ (VGS=10V)
- **ID (drain current)**: 18A
- **Technology**: Trench
- **Operating temperature range**: -55℃ to +150℃
- **Package type**: TO220F
- **Configuration**: Single channel N-type
- **VDS (drain-source voltage)**: 100V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.8V
- **RDS(ON)**: 86mΩ (VGS=10V)
- **ID (drain current)**: 18A
- **Technology**: Trench
- **Operating temperature range**: -55℃ to +150℃
Domain and module applications：
SIHLI540G-VB is a high-efficiency MOSFET for medium voltage applications. Its 100V drain-source voltage makes it very popular in power management, power conversion and switch control. Especially in the fields of DC-DC converters, AC-DC power supplies and battery management systems, this MOSFET can efficiently control the current and reduce energy loss and heat generation through its low on-resistance (RDS(ON)=86mΩ), thereby improving the efficiency and stability of the overall system.
In motor drive applications, SIHLI540G-VB can be used as a driving element in power tools, electric appliances and automation equipment to support high current flow and reduce power loss. In these devices, its high current carrying capacity (maximum 18A) and low on-resistance make it an ideal choice for low to medium power drive systems, which can improve the efficiency of the drive circuit and extend the life of the equipment.
In addition, this MOSFET also performs well in other high-frequency switching applications, suitable for modules that require efficient power conversion, such as photovoltaic inverters, battery charge and discharge management, LED drivers, power amplifiers, etc. With its excellent temperature stability and high operating temperature range (-55℃ to +150℃), SIHLI540G-VB is particularly suitable for operation under extreme working conditions and is widely used in various fields such as industry, home appliances, consumer electronics, etc.
In general, SIHLI540G-VB is a MOSFET suitable for medium voltage, high efficiency power conversion and drive control applications, with wide market applicability, and can provide high-efficiency, low-power solutions in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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