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SIHLI520G-VB Product details

Product introduction:

SIHLI520G-VB MOSFET Detailed Product Introduction

**Product Name**: SIHLI520G-VB
**Package Type**: TO220F
**Configuration**: Unipolar N-channel
**Technology Type**: Trench Technology
**Maximum Drain-Source Voltage (VDS)**: 100V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 1.8V
**On-Resistance (RDS(ON))**: 86mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 18A

**Product Overview**:
SIHLI520G-VB is a high-performance N-channel MOSFET in TO220F package, suitable for medium power switching and control applications. It has a maximum drain-source voltage of 100V and a drain current capability of 18A, and can work stably in a higher voltage and current environment. This MOSFET adopts Trench technology and has a low on-resistance (86mΩ @ VGS = 10V), which can effectively reduce power loss and improve system efficiency. It is suitable for applications requiring medium voltage (100V) and high current (18A), such as power management, LED driving, motor control, and power conversion.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 100V 1.8V 18A 86mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 100V 1.8V 18A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 100V 1.8V 18A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
SIHLI520G-VB MOSFET Detailed parameter description

- **VDS (maximum drain-source voltage)**: 100V
SIHLI520G-VB has a maximum drain-source voltage of 100V, suitable for medium and high voltage power supplies and control systems below 100V. This voltage-withstand characteristic enables it to adapt to a variety of power management, power conversion and drive applications.

- **VGS (maximum gate-source voltage)**: ±20V
The MOSFET supports a gate-source voltage range of ±20V, which is compatible with most common drive circuits and ensures stable switching control. It has a wide gate voltage tolerance, which helps to achieve reliable switching operation in high-voltage environments.

- **Vth (threshold voltage)**: 1.8V
The threshold voltage of SIHLI520G-VB is 1.8V, which means that the MOSFET can be turned on at a lower gate-source voltage. This feature makes it suitable for applications with high requirements on switching time and gate voltage, providing fast switching response.

- **RDS(ON) (On-resistance)**: 86mΩ @ VGS = 10V
At VGS = 10V, the on-resistance of the MOSFET is 86mΩ. The low RDS(ON) value ensures minimal power loss during conduction, improving the energy efficiency of the system. Low on-resistance is a key parameter for improving switching power supply efficiency and reducing heat loss.

- **ID (Maximum Drain Current)**: 18A
SIHLI520G-VB has a maximum drain current carrying capacity of 18A, enabling it to meet the needs of high current loads and is suitable for power supplies and drive circuits with higher current requirements.

Domain and module applications:

SIHLI520G-VB MOSFET Application Examples

1. **Power Management**:
SIHLI520G-VB is an ideal medium-to-high voltage power management MOSFET that can be used in applications such as DC-DC converters and AC-DC power supplies. Its 100V withstand voltage and 18A current capability enable it to provide stable and efficient switching control in power conversion, reduce power loss, and improve the overall efficiency of the power supply. This MOSFET can efficiently regulate voltage and current to ensure reliable operation of electronic equipment.

2. **LED Driver**:
In LED driver, SIHLI520G-VB can effectively regulate the power current to ensure efficient lighting of LED lamps. Its low RDS(ON) characteristics can reduce power loss and improve the energy efficiency of the driver, reduce heat generation, and extend the life of the equipment. It is particularly suitable for use in medium-to-high power LED driver.

3. **Motor Control**:
SIHLI520G-VB is also widely used in motor drive systems. With its 18A drain current carrying capacity and 100V withstand voltage, SIHLI520G-VB can be used in applications such as motor starting, speed control and regulation. Its low on-resistance helps reduce energy losses in motor drives and improve system efficiency.

4. **Power conversion and inverter applications**:
This MOSFET is suitable for power conversion and inverter circuits, providing efficient current switching. It can operate stably under high-frequency working conditions and is used in inverters, UPS systems (uninterruptible power supplies) and power conversion modules for solar panels. The high current capability and low on-resistance of SIHLI520G-VB reduce heat and power losses in these applications and improve energy efficiency.

5. **Automotive power management system**:
In automotive electronics and power management systems, SIHLI520G-VB is a power control component that can efficiently process power from batteries or generators, regulate voltage and ensure stable operation of equipment. With a withstand voltage of 100V, it is very suitable for medium voltage power supply and current control needs inside the car.

6. **Intelligent Battery Management System**:
SIHLI520G-VB can be used as a switching element in a battery management system (BMS), responsible for battery charging, discharging, overcharge protection and other functions. Its 18A drain current carrying capacity is suitable for large battery packs, especially in electric vehicles and energy storage systems, and is essential for stable battery management and protection.

7. **Industrial Automation Equipment**:
In industrial automation, SIHLI520G-VB MOSFET can be used as a signal switch or motor controller to ensure stable operation of equipment in high-load, high-power environments. It performs well in such demanding environments and is suitable for power switch management in robot control systems and automation equipment.

In summary, SIHLI520G-VB is a medium-voltage N-channel MOSFET with efficient switching performance, suitable for power management, LED drive, motor control, power conversion, automotive power management, intelligent battery management systems and other fields. Its 100V withstand voltage, 18A current carrying capacity and low RDS(ON) characteristics enable it to perform well in various high-performance, low-power switching power supplies and power regulation systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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