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SiHL630S-VB Product details
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SiHL630S-VB is a high-performance N-type MOSFET packaged in TO263 and using Trench technology. The device has a maximum drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V, and is suitable for medium and low voltage power management and switch control systems. Its threshold voltage (Vth) is 3V, the on-resistance (RDS(ON)) is 300mΩ (at VGS=10V), and the maximum leakage current (ID) is 10A. The low on-resistance and high switching efficiency of SiHL630S-VB enable it to perform well in power conversion, motor drive, and high-efficiency power supplies, and is particularly suitable for applications requiring high efficiency and high reliability.
**
SiHL630S-VB is a high-performance N-type MOSFET packaged in TO263 and using Trench technology. The device has a maximum drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V, and is suitable for medium and low voltage power management and switch control systems. Its threshold voltage (Vth) is 3V, the on-resistance (RDS(ON)) is 300mΩ (at VGS=10V), and the maximum leakage current (ID) is 10A. The low on-resistance and high switching efficiency of SiHL630S-VB enable it to perform well in power conversion, motor drive, and high-efficiency power supplies, and is particularly suitable for applications requiring high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | 300mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
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- **Package type**: TO263
- **Configuration**: Single channel N-type
- **VDS (drain-source voltage)**: 200V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON)**: 300mΩ (VGS=10V)
- **ID (drain current)**: 10A
- **Technology**: Trench
- **Operating temperature range**: -55℃ to +150℃
- **Package type**: TO263
- **Configuration**: Single channel N-type
- **VDS (drain-source voltage)**: 200V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON)**: 300mΩ (VGS=10V)
- **ID (drain current)**: 10A
- **Technology**: Trench
- **Operating temperature range**: -55℃ to +150℃
Domain and module applications：
SiHL630S-VB is suitable for a variety of low and medium voltage power control and power management applications. With a maximum drain-source voltage of 200V and low on-resistance (RDS(ON)=300mΩ), it is very suitable for medium power DC-DC converters, switching power supplies and battery management systems. The high-efficiency switching performance of MOSFET enables it to effectively reduce energy loss in high-frequency operation, and is particularly suitable for power applications requiring high efficiency and low power consumption.
In addition, the 10A maximum leakage current of SiHL630S-VB makes it an ideal choice for motor drive systems, and can control motor drive signals in power tools, home appliances, and industrial automation equipment. Low on-resistance and good switching characteristics can help reduce heat and power loss in motor drive systems, thereby improving the reliability and life of the equipment.
Due to its high voltage resistance and good temperature adaptability (operating temperature range is -55℃ to +150℃), SiHL630S-VB is also suitable for working in harsh industrial environments and high temperature conditions, and is widely used in industrial control systems, LED drivers, power amplifiers and other power modules requiring medium current and high efficiency. Its voltage resistance and switching efficiency make it suitable for applications requiring higher voltage stability, such as battery charging and discharging systems and low to medium voltage power adapters.
In short, SiHL630S-VB is a reliable and adaptable N-type MOSFET that can provide efficient power control in a variety of applications, especially suitable for power management, switching power supplies and motor drives.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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