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SiHL620S-VB Product details
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SiHL620S-VB MOSFET Detailed product introduction
**Product name**: SiHL620S-VB
**Package type**: TO263
**Configuration**: Unipolar N-channel
**Technology type**: Trench technology
**Maximum drain-source voltage (VDS)**: 200V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 3V
**On-resistance (RDS(ON))**: 300mΩ @ VGS = 10V
**Maximum drain current (ID)**: 10A
**Product Overview**:
SiHL620S-VB is an N-channel MOSFET in TO263 package with a high withstand voltage of 200V and a current carrying capability of 10A, suitable for medium power switching applications. It uses advanced Trench technology and has a low on-resistance (300mΩ @ VGS = 10V), which effectively reduces switching losses and improves system efficiency. Due to its efficient current regulation and low power consumption, SiHL620S-VB is particularly suitable for power management, motor drive, battery management systems and other fields, and can meet the needs of efficient operation in medium and high voltage environments.
**Product name**: SiHL620S-VB
**Package type**: TO263
**Configuration**: Unipolar N-channel
**Technology type**: Trench technology
**Maximum drain-source voltage (VDS)**: 200V
**Maximum gate-source voltage (VGS)**: ±20V
**Threshold voltage (Vth)**: 3V
**On-resistance (RDS(ON))**: 300mΩ @ VGS = 10V
**Maximum drain current (ID)**: 10A
**Product Overview**:
SiHL620S-VB is an N-channel MOSFET in TO263 package with a high withstand voltage of 200V and a current carrying capability of 10A, suitable for medium power switching applications. It uses advanced Trench technology and has a low on-resistance (300mΩ @ VGS = 10V), which effectively reduces switching losses and improves system efficiency. Due to its efficient current regulation and low power consumption, SiHL620S-VB is particularly suitable for power management, motor drive, battery management systems and other fields, and can meet the needs of efficient operation in medium and high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | 300mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
SiHL620S-VB MOSFET Detailed parameter description
- **VDS (maximum drain-source voltage)**: 200V
The maximum drain-source voltage of SiHL620S-VB is 200V, making it suitable for power management and control systems below 200V. This voltage level can cope with the medium voltage requirements in a variety of industrial applications and is suitable for environments with large voltage changes.
- **VGS (maximum gate-source voltage)**: ±20V
The maximum gate-source voltage is ±20V, supporting a wide range of control circuits. This range can meet the requirements of most drive circuits and ensure that the MOSFET can achieve fast and reliable switching as required.
- **Vth (threshold voltage)**: 3V
The threshold voltage of 3V allows the SiHL620S-VB to start conducting at a lower gate voltage. For system designers, the relatively low threshold voltage can increase the switching speed, making this MOSFET more suitable for efficient switching power supplies and high-speed control circuits.
- **RDS(ON) (On-resistance)**: 300mΩ @ VGS = 10V
At VGS = 10V, the on-resistance is 300mΩ. This lower RDS(ON) results in less power loss in the MOSFET in the on state, thereby improving the operating efficiency of the system. In high-frequency switching applications, lower RDS(ON) also helps reduce heat generation.
- **ID (Maximum Drain Current)**: 10A
The maximum drain current of this MOSFET is 10A, which is suitable for medium-power current carrying applications. It can efficiently drive medium-power loads and has good current regulation and load capability in power management, drive control and other occasions.
- **VDS (maximum drain-source voltage)**: 200V
The maximum drain-source voltage of SiHL620S-VB is 200V, making it suitable for power management and control systems below 200V. This voltage level can cope with the medium voltage requirements in a variety of industrial applications and is suitable for environments with large voltage changes.
- **VGS (maximum gate-source voltage)**: ±20V
The maximum gate-source voltage is ±20V, supporting a wide range of control circuits. This range can meet the requirements of most drive circuits and ensure that the MOSFET can achieve fast and reliable switching as required.
- **Vth (threshold voltage)**: 3V
The threshold voltage of 3V allows the SiHL620S-VB to start conducting at a lower gate voltage. For system designers, the relatively low threshold voltage can increase the switching speed, making this MOSFET more suitable for efficient switching power supplies and high-speed control circuits.
- **RDS(ON) (On-resistance)**: 300mΩ @ VGS = 10V
At VGS = 10V, the on-resistance is 300mΩ. This lower RDS(ON) results in less power loss in the MOSFET in the on state, thereby improving the operating efficiency of the system. In high-frequency switching applications, lower RDS(ON) also helps reduce heat generation.
- **ID (Maximum Drain Current)**: 10A
The maximum drain current of this MOSFET is 10A, which is suitable for medium-power current carrying applications. It can efficiently drive medium-power loads and has good current regulation and load capability in power management, drive control and other occasions.
Domain and module applications：
SiHL620S-VB MOSFET Application Examples
1. **DC-DC Converter**:
SiHL620S-VB is particularly suitable for medium-power DC-DC converters due to its 200V withstand voltage and 300mΩ low on-resistance. It can play an important role in efficient power conversion, especially in applications that require output voltage and current regulation, such as power modules for industrial automation equipment and communication equipment.
2. **Motor Drive System**:
In small and medium-sized motor drive applications, SiHL620S-VB can be used as a switching element to control the start, operation and braking of the motor. Its 10A maximum drain current capability and low on-resistance characteristics can effectively reduce energy loss in motor control and improve the efficiency and stability of the drive system.
3. **LED Driver Power Supply**:
SiHL620S-VB is also suitable for LED driver power supply systems. In LED lighting applications, it can ensure that LED lamps operate in an efficient and stable working state by regulating the power supply current. Due to its low RDS(ON), the MOSFET helps reduce energy losses in the driver power supply, thereby improving the overall efficiency of the LED lamp.
4. **Battery Management System (BMS)**:
In the battery management system, the SiHL620S-VB can provide functions such as battery charge and discharge control, overcharge and over-discharge protection. Due to its 200V withstand voltage, it is suitable for medium-voltage battery systems, and its 10A current capability makes it suitable for the management of larger battery packs. The low RDS(ON) of the MOSFET can reduce heat generation during battery charging and discharging, improving the reliability and life of the system.
5. **UPS (Uninterruptible Power Supply) System**:
In the UPS system, the SiHL620S-VB can be used for efficient power switching and battery charging circuits. In the event of a power outage, the switching characteristics of the MOSFET can ensure seamless switching to the backup power supply, while maintaining low power loss during the charging process to ensure stable operation of the UPS system.
6. **Power regulation module**:
SiHL620S-VB can be widely used in various power regulation modules, especially in situations where power or current needs to be precisely regulated. For example, in modules such as power adapters and smart power supplies, MOSFETs can efficiently switch currents to ensure the normal operation of the system and minimize losses.
In summary, SiHL620S-VB is an efficient medium-voltage N-channel MOSFET suitable for various power management and power regulation applications such as DC-DC converters, motor drives, battery management systems (BMS), and LED driver power supplies. Its 200V withstand voltage, 10A drain current carrying capacity, and low RDS(ON) make it an ideal choice for efficient power conversion, power control, and battery protection applications.
1. **DC-DC Converter**:
SiHL620S-VB is particularly suitable for medium-power DC-DC converters due to its 200V withstand voltage and 300mΩ low on-resistance. It can play an important role in efficient power conversion, especially in applications that require output voltage and current regulation, such as power modules for industrial automation equipment and communication equipment.
2. **Motor Drive System**:
In small and medium-sized motor drive applications, SiHL620S-VB can be used as a switching element to control the start, operation and braking of the motor. Its 10A maximum drain current capability and low on-resistance characteristics can effectively reduce energy loss in motor control and improve the efficiency and stability of the drive system.
3. **LED Driver Power Supply**:
SiHL620S-VB is also suitable for LED driver power supply systems. In LED lighting applications, it can ensure that LED lamps operate in an efficient and stable working state by regulating the power supply current. Due to its low RDS(ON), the MOSFET helps reduce energy losses in the driver power supply, thereby improving the overall efficiency of the LED lamp.
4. **Battery Management System (BMS)**:
In the battery management system, the SiHL620S-VB can provide functions such as battery charge and discharge control, overcharge and over-discharge protection. Due to its 200V withstand voltage, it is suitable for medium-voltage battery systems, and its 10A current capability makes it suitable for the management of larger battery packs. The low RDS(ON) of the MOSFET can reduce heat generation during battery charging and discharging, improving the reliability and life of the system.
5. **UPS (Uninterruptible Power Supply) System**:
In the UPS system, the SiHL620S-VB can be used for efficient power switching and battery charging circuits. In the event of a power outage, the switching characteristics of the MOSFET can ensure seamless switching to the backup power supply, while maintaining low power loss during the charging process to ensure stable operation of the UPS system.
6. **Power regulation module**:
SiHL620S-VB can be widely used in various power regulation modules, especially in situations where power or current needs to be precisely regulated. For example, in modules such as power adapters and smart power supplies, MOSFETs can efficiently switch currents to ensure the normal operation of the system and minimize losses.
In summary, SiHL620S-VB is an efficient medium-voltage N-channel MOSFET suitable for various power management and power regulation applications such as DC-DC converters, motor drives, battery management systems (BMS), and LED driver power supplies. Its 200V withstand voltage, 10A drain current carrying capacity, and low RDS(ON) make it an ideal choice for efficient power conversion, power control, and battery protection applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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