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SiHL520-E3-VB Product details

Product introduction:

SiHL520-E3-VB Product Introduction

SiHL520-E3-VB is a high-efficiency single N-type MOSFET in a TO262 package for high current and high efficiency power control applications. This MOSFET has a maximum drain-source voltage (VDS) of 100V, which can handle low to medium voltage power applications. Its threshold voltage (Vth) is 2.5V, which means that it starts to conduct at this voltage, so it can work stably at low gate voltages. The on-resistance (RDS(ON)) of SiHL520-E3-VB is 10mΩ at VGS = 4.5V and 9mΩ at VGS = 10V, which means that this MOSFET will have extremely low power loss when it is turned on, suitable for high efficiency applications. Its maximum drain current (ID) is 100A, which can support high current requirements. This MOSFET uses Trench technology, which has high switching speed and low on-resistance, optimizing power efficiency in the current path.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO262 Single-N 100V 2.5V 100A 9mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO262 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO262 Single-N 100V 2.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO262 Single-N 100V 2.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO262 Single-N
SiHL520-E3-VB Detailed Parameters

| Parameter | Value | Description |
|---------------|------------------------|------------------------------------------|
| **Package** | TO262 | Surface mount package for high current and high power applications |
| **Configuration** | Single N-type channel | For low-side switch control, load switching |
| **Maximum drain-source voltage (VDS)** | 100V | For low-voltage to medium-voltage power management applications |
| **Gate-source voltage (VGS)** | ±20V | Maximum value of gate voltage |
| **Threshold voltage (Vth)** | 2.5V | Minimum gate voltage at which MOSFET starts to turn on |
| **On-resistance (RDS(ON))** | 10mΩ @ VGS = 4.5V | On-resistance at VGS = 4.5V |
| **On-resistance (RDS(ON))** | 9mΩ @ VGS = 10V | On-resistance at VGS = 10V|
| **Maximum drain current (ID)** | 100A | Maximum drain current, suitable for high current applications|
| **Technology** | Trench | Trench technology reduces on-resistance and improves switching efficiency|

Domain and module applications:

Applications and module examples

1. **High-efficiency power management system**
SiHL520-E3-VB is very suitable for use in high-efficiency power management systems due to its low on-resistance (9mΩ), especially for power modules with high current requirements. It can be used as a switching element in DC-DC converters, AC-DC power supplies, and power adapters to significantly reduce power losses during power conversion and improve overall system efficiency. This low-loss performance is especially important in data centers, high-performance computing equipment, and communication equipment.

2. **Motor drive control system**
In motor drive and control systems, SiHL520-E3-VB can be used as an efficient switching element to help drive the motor load. Because it can carry up to 100A of drain current, it is very suitable for high-power motor drives (such as industrial motors, home appliance motors, EV motor control, etc.). Through low on-resistance, the losses during motor startup and operation can be reduced, and the working efficiency and stability of the motor can be improved.

3. **Battery Management System (BMS)**
In the battery management system (BMS), SiHL520-E3-VB has characteristics that are very suitable for high-current operation. Its maximum drain current (ID) reaches 100A, which can effectively manage the charging and discharging process of high-power batteries. Especially in electric vehicles, energy storage systems and high-power mobile devices, this MOSFET can provide stable current regulation, optimize battery performance and extend service life.

4. **LED Driver**
SiHL520-E3-VB can be widely used in high-efficiency LED driver power supplies to provide current regulation as a high-current switching element. Its low on-resistance and high current carrying capacity make it very effective in high-power LED lighting systems, which can reduce power losses during current switching, thereby improving the overall energy efficiency of LED lighting, especially in commercial, industrial or outdoor lighting applications.

5. **Automotive Power System**
SiHL520-E3-VB is also suitable for automotive power systems, especially in modules that require high power conversion and management, such as car chargers, on-board power adapters, battery management systems (BMS), etc. Its low on-resistance can improve the energy efficiency of the system, and because it can withstand large currents, it performs well in battery management and power conversion systems in electric vehicles (EVs) and hybrid electric vehicles (HEVs).

6. **Industrial Automation Control**
In industrial automation control systems, SiHL520-E3-VB can be used as an efficient switching element in industrial equipment drive and control modules, such as programmable logic controllers (PLCs), robot control systems, etc. Its high current handling capability enables it to support power management of high-power industrial equipment, and its low on-resistance ensures high efficiency and low energy consumption in system operation.

7. **UPS (Uninterruptible Power Supply) System**
In an uninterruptible power supply (UPS) system, SiHL520-E3-VB can be used as a power switch to support efficient power conversion. Especially in UPS systems that need to handle large currents and operate efficiently and stably, the low on-resistance and high current capability of SiHL520-E3-VB enable it to significantly improve the efficiency and reliability of the UPS system.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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