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SIHG47N60S-E3-VB Product details
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SIHG47N60S-E3-VB is a high-performance N-type MOSFET packaged in TO247 and using SJ_Multi-EPI technology. The device has a maximum drain-source voltage (VDS) of 650V and is suitable for medium and high voltage power management and power conversion applications. Its gate-source voltage (VGS) is ±30V and its threshold voltage (Vth) is 3.5V, which allows it to operate stably over a wide range of gate voltages. SIHG47N60S-E3-VB has an on-resistance (RDS(ON)) of 75mΩ (at VGS=10V) and a large maximum drain current (ID) of 47A, making it suitable for high current, low power loss applications. Its high current carrying capacity and low conduction loss make it an ideal choice for systems such as high power power conversion, motor drives, inverters, and battery management.
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SIHG47N60S-E3-VB is a high-performance N-type MOSFET packaged in TO247 and using SJ_Multi-EPI technology. The device has a maximum drain-source voltage (VDS) of 650V and is suitable for medium and high voltage power management and power conversion applications. Its gate-source voltage (VGS) is ±30V and its threshold voltage (Vth) is 3.5V, which allows it to operate stably over a wide range of gate voltages. SIHG47N60S-E3-VB has an on-resistance (RDS(ON)) of 75mΩ (at VGS=10V) and a large maximum drain current (ID) of 47A, making it suitable for high current, low power loss applications. Its high current carrying capacity and low conduction loss make it an ideal choice for systems such as high power power conversion, motor drives, inverters, and battery management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
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- **Package type**: TO247
- **Configuration**: Single channel N-type
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON)**: 75mΩ (VGS=10V)
- **ID (drain current)**: 47A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55℃ to +150℃
- **Package type**: TO247
- **Configuration**: Single channel N-type
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON)**: 75mΩ (VGS=10V)
- **ID (drain current)**: 47A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55℃ to +150℃
Domain and module applications：
SIHG47N60S-E3-VB is suitable for power management systems that require high current and high efficiency. Its maximum drain-source voltage of 650V and low RDS(ON) value make it very suitable for use in DC-DC converters, AC-DC power supplies, solar inverters, UPS (uninterruptible power supply) and other fields. In these applications, MOSFET provides excellent current switching characteristics, which can effectively reduce energy loss, improve system efficiency, and provide stable performance in high voltage environments.
In addition, the high current carrying capacity (maximum 47A) of SIHG47N60S-E3-VB makes it an ideal choice for motor drive systems, especially for electric vehicles, power tools and motor control modules in industrial automation. Due to its low on-resistance, it can effectively reduce heat generation during frequent switching and improve the stability and durability of the equipment.
In renewable energy applications, this MOSFET can also be used in solar inverters, battery management systems and other high-power energy conversion equipment to provide efficient and reliable power conversion and control. Due to its wide temperature range (-55℃ to +150℃), it can also work stably in high temperature environments, which is very suitable for applications with high temperature variation requirements in industrial and electrical equipment. In short, SIHG47N60S-E3-VB is a versatile, high-efficiency, and adaptable MOSFET suitable for a variety of fields requiring high current, high efficiency, and high voltage control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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