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SiHG47N60E-VB Product details

Product introduction:

SiHG47N60E-VB MOSFET Product Introduction

SiHG47N60E-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO247 package, designed for high voltage and high current applications, with a withstand voltage of 650V, suitable for high power density and high efficiency power conversion systems. This MOSFET has a maximum gate-source voltage (VGS) of 30V and a turn-on voltage (Vth) of 3.5V, suitable for applications that require low gate-source voltage startup. Its on-resistance (RDS(ON)) is 75mΩ@VGS=10V, supporting a maximum leakage current of 47A, ensuring that it can efficiently carry a large current load while reducing conduction losses. Using advanced SJ_Multi-EPI technology, this MOSFET has excellent switching performance and thermal management capabilities, suitable for high-frequency switching, power conversion and power management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 650V 3.5V 47A 75mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 650V 3.5V 47A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 650V 3.5V 47A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
SiHG47N60E-VB MOSFET Detailed parameter description

- **Package type**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 47A
- **Technology**: SJ_Multi-EPI

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Domain and module applications:

Application fields and module examples

1. **High-efficiency power conversion and switching power supply (SMPS)**
- **Application scenarios**: SiHG47N60E-VB is suitable for high-voltage and high-current power conversion systems, especially in switching power supplies (SMPS) and DC-DC converters. Its 650V withstand voltage and low on-resistance (RDS(ON)) can reduce energy loss in high-frequency switching and improve conversion efficiency. It is suitable for industrial power supplies, server power supplies and power management modules for consumer electronic devices.

2. **Industrial power systems and inverters**
- **Application scenarios**: In industrial power systems and inverter applications, SiHG47N60E-VB can be used as a power switch or rectifier. Its leakage current capability of up to 47A and withstand voltage of 650V enable it to carry high-power current and work stably in high-voltage environments. It is suitable for high-power applications such as UPS (uninterruptible power supply), solar inverters, and wind power inverters.

3. **Electric Vehicle Battery Management System (BMS)**
- **Application Scenarios**: SiHG47N60E-VB is also widely used in the battery management system (BMS) of electric vehicles, especially in high-voltage and high-current charging and discharging control. Due to its excellent current carrying capacity and low on-resistance, it can ensure efficient energy conversion and stability during battery charging and reduce heat loss during charging.

4. **High-efficiency power tool drive circuit**
- **Application Scenarios**: This MOSFET can be applied to the current switch and drive circuit of power tools, especially for power tools that require high power and high current handling, such as electric drills, electric screwdrivers, etc. Due to its low on-resistance and high current carrying capacity, SiHG47N60E-VB can significantly reduce power loss and improve the battery efficiency and endurance of the tool.

5. **Home appliances and consumer electronics devices**
- **Application scenarios**: In the field of home appliances and consumer electronics, SiHG47N60E-VB can be used as a power management and current control switch, especially suitable for providing stable and energy-saving power conversion in large household appliances (such as refrigerators, air conditioners, washing machines, etc.) and consumer electronic devices such as LCD TVs and monitors. Its 650V withstand voltage and high current capability ensure high efficiency and reliability of the equipment during operation.

These applications demonstrate the superior performance of SiHG47N60E-VB in high voltage and high current environments. With its low conduction loss, efficient switching and good thermal management capabilities, SiHG47N60E-VB is suitable for a variety of applications requiring high efficiency and high power conversion, especially in power management, power conversion, inverters and industrial equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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