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SIHG47N60E-E3-VB Product details
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SIHG47N60E-E3-VB MOSFET Detailed Product Introduction
**Product Name**: SIHG47N60E-E3-VB
**Package Type**: TO247
**Configuration**: Unipolar N-channel
**Technology Type**: SJ_Multi-EPI Technology
**Maximum Drain-Source Voltage (VDS)**: 650V
**Maximum Gate-Source Voltage (VGS)**: ±30V
**Threshold Voltage (Vth)**: 3.5V
**On-Resistance (RDS(ON))**: 75mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 47A
**Product Overview**:
SIHG47N60E-E3-VB It is a high-voltage, low on-resistance N-channel MOSFET in TO247 package, suitable for high-voltage, high-current switching applications. Its maximum drain-source voltage is 650V, suitable for medium and high voltage power supply control, motor drive, power conversion and other systems. Based on advanced SJ_Multi-EPI technology, it has lower RDS(ON) (75mΩ) and larger drain current carrying capacity (47A), enabling efficient switching in high-power applications, reducing power consumption and improving system performance. This MOSFET is widely used in various power electronic products, especially in areas requiring high voltage and high current carrying.
**Product Name**: SIHG47N60E-E3-VB
**Package Type**: TO247
**Configuration**: Unipolar N-channel
**Technology Type**: SJ_Multi-EPI Technology
**Maximum Drain-Source Voltage (VDS)**: 650V
**Maximum Gate-Source Voltage (VGS)**: ±30V
**Threshold Voltage (Vth)**: 3.5V
**On-Resistance (RDS(ON))**: 75mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 47A
**Product Overview**:
SIHG47N60E-E3-VB It is a high-voltage, low on-resistance N-channel MOSFET in TO247 package, suitable for high-voltage, high-current switching applications. Its maximum drain-source voltage is 650V, suitable for medium and high voltage power supply control, motor drive, power conversion and other systems. Based on advanced SJ_Multi-EPI technology, it has lower RDS(ON) (75mΩ) and larger drain current carrying capacity (47A), enabling efficient switching in high-power applications, reducing power consumption and improving system performance. This MOSFET is widely used in various power electronic products, especially in areas requiring high voltage and high current carrying.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
SIHG47N60E-E3-VB MOSFET Detailed parameter description
- **VDS (maximum drain-source voltage)**: 650V
The maximum drain-source voltage of this MOSFET is 650V, which is suitable for medium and high voltage power management, power regulation and load control. In high voltage systems, it can provide stable performance to ensure that voltage fluctuations or overvoltages will not damage the MOSFET.
- **VGS (maximum gate-source voltage)**: ±30V
The maximum gate-source voltage is ±30V, which is suitable for various gate voltage control systems. The gate-source voltage in this range is compatible with most electronic control circuits, allowing MOSFETs to switch efficiently and adapt to a variety of power drive circuits.
- **Vth (threshold voltage)**: 3.5V
The threshold voltage of 3.5V means that the MOSFET starts to turn on when the gate voltage reaches 3.5V. The relatively high threshold voltage helps to avoid mis-turning on, which is suitable for high-voltage applications that require precise control of the gate voltage.
- **RDS(ON) (On-resistance)**: 75mΩ @ VGS = 10V
The on-resistance is 75mΩ, which shows lower conduction loss at VGS = 10V, which can significantly reduce power loss in the system and improve power efficiency. Lower RDS(ON) helps reduce heat accumulation and improve system reliability in high-power switching applications.
- **ID (Maximum drain current)**: 47A
The maximum drain current of this MOSFET is 47A, making it suitable for applications that require high current drive. It can effectively handle high power loads and operate stably under high current conditions, making it suitable for high-power power supplies and industrial control systems.
- **VDS (maximum drain-source voltage)**: 650V
The maximum drain-source voltage of this MOSFET is 650V, which is suitable for medium and high voltage power management, power regulation and load control. In high voltage systems, it can provide stable performance to ensure that voltage fluctuations or overvoltages will not damage the MOSFET.
- **VGS (maximum gate-source voltage)**: ±30V
The maximum gate-source voltage is ±30V, which is suitable for various gate voltage control systems. The gate-source voltage in this range is compatible with most electronic control circuits, allowing MOSFETs to switch efficiently and adapt to a variety of power drive circuits.
- **Vth (threshold voltage)**: 3.5V
The threshold voltage of 3.5V means that the MOSFET starts to turn on when the gate voltage reaches 3.5V. The relatively high threshold voltage helps to avoid mis-turning on, which is suitable for high-voltage applications that require precise control of the gate voltage.
- **RDS(ON) (On-resistance)**: 75mΩ @ VGS = 10V
The on-resistance is 75mΩ, which shows lower conduction loss at VGS = 10V, which can significantly reduce power loss in the system and improve power efficiency. Lower RDS(ON) helps reduce heat accumulation and improve system reliability in high-power switching applications.
- **ID (Maximum drain current)**: 47A
The maximum drain current of this MOSFET is 47A, making it suitable for applications that require high current drive. It can effectively handle high power loads and operate stably under high current conditions, making it suitable for high-power power supplies and industrial control systems.
Domain and module applications：
SIHG47N60E-E3-VB MOSFET Application Examples
1. **High-efficiency power conversion system**:
Due to its high withstand voltage of 650V and low on-resistance, SIHG47N60E-E3-VB is suitable for use in high-efficiency DC-DC converters and AC-DC power supply systems. It can handle high-power, high-voltage current regulation needs, improve power efficiency, and reduce energy loss. Its high current carrying capacity enables it to cope with power conversion needs in large-load systems and ensure stable system operation.
2. **Motor drive system**:
In industrial motor drive applications, SIHG47N60E-E3-VB provides stable high-current switching capabilities, especially for high-voltage motor control systems. It can provide precise current control during motor starting, running, and braking, reducing losses and improving efficiency.
3. **Solar Inverters**:
In solar inverters, the SIHG47N60E-E3-VB is used as a switching element in the high-voltage DC-AC conversion link. The inverter needs to process the high-voltage DC power from the solar panel and convert it into AC power suitable for home or grid use. The MOSFET is able to withstand high voltages and provide low-power switching, supporting the efficient operation of solar inverters.
4. **Electric Vehicle (EV) Power Management**:
In the battery management and power conversion system of electric vehicles, the SIHG47N60E-E3-VB is an ideal switching element. It can handle high voltages and high currents between battery packs and in the charging module, ensuring high efficiency during battery charging and stable operation of the electric drive system.
5. **UPS (Uninterruptible Power Supply) Systems**:
In UPS (Uninterruptible Power Supply) systems, the SIHG47N60E-E3-VB can be used to control the switching and regulation of power. It can withstand high currents and has a low on-resistance, which reduces energy loss during the switching process and ensures that the UPS system can provide continuous power during power outages.
6. **Industrial power control system**:
SIHG47N60E-E3-VB is also suitable for industrial power modules, especially in situations where high power and high voltage processing is required. High-power devices in industrial applications, such as inverters, industrial laser cutting machines, etc., can use this MOSFET to provide efficient current regulation and conversion to ensure stable operation of the equipment under high loads.
In summary, SIHG47N60E-E3-VB MOSFET is a high-voltage and high-current carrying capacity MOSFET suitable for high-power power management, motor drives, solar inverters, electric vehicle power management, UPS systems and other fields. Its 650V withstand voltage, 47A current handling capability and 75mΩ on-resistance make it an ideal switching element under high voltage and high current loads.
1. **High-efficiency power conversion system**:
Due to its high withstand voltage of 650V and low on-resistance, SIHG47N60E-E3-VB is suitable for use in high-efficiency DC-DC converters and AC-DC power supply systems. It can handle high-power, high-voltage current regulation needs, improve power efficiency, and reduce energy loss. Its high current carrying capacity enables it to cope with power conversion needs in large-load systems and ensure stable system operation.
2. **Motor drive system**:
In industrial motor drive applications, SIHG47N60E-E3-VB provides stable high-current switching capabilities, especially for high-voltage motor control systems. It can provide precise current control during motor starting, running, and braking, reducing losses and improving efficiency.
3. **Solar Inverters**:
In solar inverters, the SIHG47N60E-E3-VB is used as a switching element in the high-voltage DC-AC conversion link. The inverter needs to process the high-voltage DC power from the solar panel and convert it into AC power suitable for home or grid use. The MOSFET is able to withstand high voltages and provide low-power switching, supporting the efficient operation of solar inverters.
4. **Electric Vehicle (EV) Power Management**:
In the battery management and power conversion system of electric vehicles, the SIHG47N60E-E3-VB is an ideal switching element. It can handle high voltages and high currents between battery packs and in the charging module, ensuring high efficiency during battery charging and stable operation of the electric drive system.
5. **UPS (Uninterruptible Power Supply) Systems**:
In UPS (Uninterruptible Power Supply) systems, the SIHG47N60E-E3-VB can be used to control the switching and regulation of power. It can withstand high currents and has a low on-resistance, which reduces energy loss during the switching process and ensures that the UPS system can provide continuous power during power outages.
6. **Industrial power control system**:
SIHG47N60E-E3-VB is also suitable for industrial power modules, especially in situations where high power and high voltage processing is required. High-power devices in industrial applications, such as inverters, industrial laser cutting machines, etc., can use this MOSFET to provide efficient current regulation and conversion to ensure stable operation of the equipment under high loads.
In summary, SIHG47N60E-E3-VB MOSFET is a high-voltage and high-current carrying capacity MOSFET suitable for high-power power management, motor drives, solar inverters, electric vehicle power management, UPS systems and other fields. Its 650V withstand voltage, 47A current handling capability and 75mΩ on-resistance make it an ideal switching element under high voltage and high current loads.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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