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SIHG32N50D-GE3-VB Product details
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1. Product Introduction (SIHG32N50D-GE3-VB)
SIHG32N50D-GE3-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-voltage applications. It has a maximum drain-source voltage (VDS) of 500V and a drain current (ID) of 40A, suitable for a variety of high-power switching and power management applications. The device has a gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.8V, and an on-resistance (RDS(ON)) of 80mΩ @ VGS = 10V, with low switching losses and high-efficiency current control capabilities. It is manufactured using SJ_Multi-EPI technology, which provides good thermal stability and lower conduction losses, allowing it to maintain stable performance under high-frequency and high-current conditions. SIHG32N50D-GE3-VB is mainly used in power management, power tools, automotive electronics, industrial control, solar inverters and other fields.
SIHG32N50D-GE3-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high-voltage applications. It has a maximum drain-source voltage (VDS) of 500V and a drain current (ID) of 40A, suitable for a variety of high-power switching and power management applications. The device has a gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.8V, and an on-resistance (RDS(ON)) of 80mΩ @ VGS = 10V, with low switching losses and high-efficiency current control capabilities. It is manufactured using SJ_Multi-EPI technology, which provides good thermal stability and lower conduction losses, allowing it to maintain stable performance under high-frequency and high-current conditions. SIHG32N50D-GE3-VB is mainly used in power management, power tools, automotive electronics, industrial control, solar inverters and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description
- **Model**: SIHG32N50D-GE3-VB
- **Package**: TO247
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **RDS(ON)**: 80mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI technology
- **Model**: SIHG32N50D-GE3-VB
- **Package**: TO247
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **RDS(ON)**: 80mΩ @ VGS = 10V
- **Drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI technology
Domain and module applications：
3. Applications and modules
#### Power management and DC-DC converters
SIHG32N50D-GE3-VB can be widely used in high-efficiency power management and DC-DC converters. Due to its 500V withstand voltage and 40A high current capability, it can provide efficient power control during power conversion. This MOSFET has a low on-resistance (RDS(ON) = 80mΩ @ VGS = 10V), which can reduce power loss in voltage conversion and current regulation, thereby improving conversion efficiency. It is widely used in industrial power supplies, consumer electronics power supplies and high-efficiency power modules.
#### Power tools and home appliance power supplies
In power tools and home appliance power modules, SIHG32N50D-GE3-VB is used as a power switch component to efficiently regulate the battery charging and discharging process and motor control. Battery management and motor control in power tools such as electric drills, electric saws, etc. and home appliances require reliable MOSFETs to ensure high efficiency and long-term stable operation of the equipment. Its lower on-resistance helps reduce power loss and improve the overall efficiency and life of the device.
#### Automotive Electronics & Electric Vehicles
In the field of electric vehicles (EVs) and automotive electronics, SIHG32N50D-GE3-VB can be used in battery management systems (BMS), motor drives, and power conversion modules. Due to its high voltage capability and high current carrying capacity, it is suitable for handling the high voltage and high current flow of electric vehicle battery packs, ensuring stability and safety during battery charging and discharging. This MOSFET helps improve the energy efficiency of electric vehicle systems, extend battery life, and reduce power losses.
#### Solar Inverters & Energy Conversion
In solar inverters, SIHG32N50D-GE3-VB is used as a key switching element to convert direct current (DC) to alternating current (AC), and is an important component in solar power generation systems. It can operate stably in a high voltage environment of 500V, has low switching losses and efficient energy conversion capabilities. By optimizing power conversion efficiency, this MOSFET supports efficient energy management and maximizes the output of solar power generation systems.
#### Industrial Automation and Motor Control
SIHG32N50D-GE3-VB is also widely used in industrial automation, motor drive and robot control systems. In these systems, MOSFET is used as a switching element to control the start and stop, speed regulation and load regulation of the motor, and can work stably under high current and high load conditions. Due to its excellent conductivity and low switching loss, it is suitable for various industrial applications such as production line equipment, automation control systems and power tools.
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SIHG32N50D-GE3-VB performs well in multiple high-power and high-voltage applications, especially in power management, power tools, automotive electronics, solar inverters and industrial control. Its 500V withstand voltage, 40A high current capability and low on-resistance provide a reliable solution in high-efficiency power conversion and high-frequency switching applications. The use of SJ_Multi-EPI technology further enhances the thermal stability and efficiency of the device, ensuring its reliability and long life under extreme working conditions.
#### Power management and DC-DC converters
SIHG32N50D-GE3-VB can be widely used in high-efficiency power management and DC-DC converters. Due to its 500V withstand voltage and 40A high current capability, it can provide efficient power control during power conversion. This MOSFET has a low on-resistance (RDS(ON) = 80mΩ @ VGS = 10V), which can reduce power loss in voltage conversion and current regulation, thereby improving conversion efficiency. It is widely used in industrial power supplies, consumer electronics power supplies and high-efficiency power modules.
#### Power tools and home appliance power supplies
In power tools and home appliance power modules, SIHG32N50D-GE3-VB is used as a power switch component to efficiently regulate the battery charging and discharging process and motor control. Battery management and motor control in power tools such as electric drills, electric saws, etc. and home appliances require reliable MOSFETs to ensure high efficiency and long-term stable operation of the equipment. Its lower on-resistance helps reduce power loss and improve the overall efficiency and life of the device.
#### Automotive Electronics & Electric Vehicles
In the field of electric vehicles (EVs) and automotive electronics, SIHG32N50D-GE3-VB can be used in battery management systems (BMS), motor drives, and power conversion modules. Due to its high voltage capability and high current carrying capacity, it is suitable for handling the high voltage and high current flow of electric vehicle battery packs, ensuring stability and safety during battery charging and discharging. This MOSFET helps improve the energy efficiency of electric vehicle systems, extend battery life, and reduce power losses.
#### Solar Inverters & Energy Conversion
In solar inverters, SIHG32N50D-GE3-VB is used as a key switching element to convert direct current (DC) to alternating current (AC), and is an important component in solar power generation systems. It can operate stably in a high voltage environment of 500V, has low switching losses and efficient energy conversion capabilities. By optimizing power conversion efficiency, this MOSFET supports efficient energy management and maximizes the output of solar power generation systems.
#### Industrial Automation and Motor Control
SIHG32N50D-GE3-VB is also widely used in industrial automation, motor drive and robot control systems. In these systems, MOSFET is used as a switching element to control the start and stop, speed regulation and load regulation of the motor, and can work stably under high current and high load conditions. Due to its excellent conductivity and low switching loss, it is suitable for various industrial applications such as production line equipment, automation control systems and power tools.
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SIHG32N50D-GE3-VB performs well in multiple high-power and high-voltage applications, especially in power management, power tools, automotive electronics, solar inverters and industrial control. Its 500V withstand voltage, 40A high current capability and low on-resistance provide a reliable solution in high-efficiency power conversion and high-frequency switching applications. The use of SJ_Multi-EPI technology further enhances the thermal stability and efficiency of the device, ensuring its reliability and long life under extreme working conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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