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SIHG25N40D-E3-VB Product details
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SIHG25N40D-E3-VB Product Introduction
SIHG25N40D-E3-VB is an N-type MOSFET in TO247 package, designed for high voltage and high efficiency applications. The maximum drain-source voltage (VDS) of this MOSFET is 500V, which is suitable for applications requiring high voltage resistance, such as medium and high voltage power management, motor control, inverters, etc. Its threshold voltage (Vth) is 3.8V, which means that at this voltage, the MOSFET can start to conduct. The on-resistance (RDS(ON)) of this MOSFET is 80mΩ at VGS = 10V, which makes it have low power loss during current conduction. The maximum drain current (ID) is 40A, which is suitable for applications requiring high current and high voltage. Using SJ_Multi-EPI technology, it provides excellent electrical performance, low on-resistance and good switching characteristics, suitable for high-efficiency power conversion and other power control fields.
SIHG25N40D-E3-VB is an N-type MOSFET in TO247 package, designed for high voltage and high efficiency applications. The maximum drain-source voltage (VDS) of this MOSFET is 500V, which is suitable for applications requiring high voltage resistance, such as medium and high voltage power management, motor control, inverters, etc. Its threshold voltage (Vth) is 3.8V, which means that at this voltage, the MOSFET can start to conduct. The on-resistance (RDS(ON)) of this MOSFET is 80mΩ at VGS = 10V, which makes it have low power loss during current conduction. The maximum drain current (ID) is 40A, which is suitable for applications requiring high current and high voltage. Using SJ_Multi-EPI technology, it provides excellent electrical performance, low on-resistance and good switching characteristics, suitable for high-efficiency power conversion and other power control fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
SIHG25N40D-E3-VB Detailed parameter description
| Parameter | Value | Description|
|-----------|--------------------------|----------------------------------------------|
| **Package** | TO247 | Suitable for high power applications, with large power heat dissipation capability|
| **Configuration** | Single N-type channel | Suitable for low-side switch, load switching control|
| **Maximum drain-source voltage (VDS)** | 500V | Maximum support 500V voltage, suitable for high voltage applications|
| **Gate-source voltage (VGS)** | ±30V | Maximum gate voltage|
| **Threshold voltage (Vth)** | 3.8V | MOSFET turn-on starting voltage|
| **On-resistance (RDS(ON))** | 80mΩ @ VGS = 10V | At VGS = 10V |
| **Maximum drain current (ID)** | 40A | Maximum drain current, suitable for high current applications |
| **Technology** | SJ_Multi-EPI | Improved conductivity, reduced conduction loss, and improved efficiency |
| Parameter | Value | Description|
|-----------|--------------------------|----------------------------------------------|
| **Package** | TO247 | Suitable for high power applications, with large power heat dissipation capability|
| **Configuration** | Single N-type channel | Suitable for low-side switch, load switching control|
| **Maximum drain-source voltage (VDS)** | 500V | Maximum support 500V voltage, suitable for high voltage applications|
| **Gate-source voltage (VGS)** | ±30V | Maximum gate voltage|
| **Threshold voltage (Vth)** | 3.8V | MOSFET turn-on starting voltage|
| **On-resistance (RDS(ON))** | 80mΩ @ VGS = 10V | At VGS = 10V |
| **Maximum drain current (ID)** | 40A | Maximum drain current, suitable for high current applications |
| **Technology** | SJ_Multi-EPI | Improved conductivity, reduced conduction loss, and improved efficiency |
Domain and module applications：
Application areas and module examples
1. **High-voltage power management system**
SIHG25N40D-E3-VB is suitable for medium and high voltage power management systems due to its high withstand voltage of 500V and high current carrying capacity of 40A. It can be used as an efficient switching element in modules such as DC-DC converters and AC-DC power supplies to help improve the energy efficiency of power supplies, especially in high-voltage environments such as industrial power supplies, photovoltaic inverters, and battery management systems.
2. **Motor drive and control**
In motor control systems, especially in motors that require high voltage and high current drive (such as industrial motors and household appliance motors), SIHG25N40D-E3-VB acts as a power switch to provide stable current switching control. Its low on-resistance helps reduce power loss, while being able to handle high currents to ensure efficient and smooth operation of the motor.
3. **Solar inverter**
This MOSFET can be widely used in inverters of photovoltaic systems as an efficient power switching element. In solar inverters, SiHG25N40D-E3-VB can be used in the process of converting DC to AC, where its high withstand voltage and low on-resistance characteristics enable it to operate efficiently under high voltage conditions during the inverter process, improving energy conversion efficiency.
4. **Battery Management System (BMS)**
In the battery management system, SIHG25N40D-E3-VB can be used in the battery charge and discharge control circuit. Its high withstand voltage and high current capabilities make it suitable for handling high-power battery systems, especially in high-power applications such as electric vehicles and power tools, which can effectively improve the efficiency and safety of battery charging and discharging.
5. **Power supply and conversion equipment**
In power supply and conversion equipment (such as UPS uninterruptible power supply, industrial power converter, etc.), SiHG25N40D-E3-VB can be used as a high-efficiency switching element for the conversion and management of electric energy. Because it can withstand high voltage (500V) and has low on-resistance, this MOSFET can ensure that these power devices can operate efficiently and stably under high load.
6. **High-efficiency lighting drive system**
In high-efficiency lighting drive systems, such as LED lighting drive power supplies, SiHG25N40D-E3-VB as a switching element can ensure low power loss and provide stable current supply. It is particularly suitable for lighting systems that require high power and long-term stable operation.
7. **Power Electronic Converter**
In the field of power electronics, SiHG25N40D-E3-VB is commonly used in various power converters (such as rectifiers, inverters, etc.), especially in situations where high voltage resistance is required (such as power transmission, wind power generation, etc.). Its stable working performance and high voltage carrying capacity can ensure the efficient and stable operation of the system in high power conversion.
1. **High-voltage power management system**
SIHG25N40D-E3-VB is suitable for medium and high voltage power management systems due to its high withstand voltage of 500V and high current carrying capacity of 40A. It can be used as an efficient switching element in modules such as DC-DC converters and AC-DC power supplies to help improve the energy efficiency of power supplies, especially in high-voltage environments such as industrial power supplies, photovoltaic inverters, and battery management systems.
2. **Motor drive and control**
In motor control systems, especially in motors that require high voltage and high current drive (such as industrial motors and household appliance motors), SIHG25N40D-E3-VB acts as a power switch to provide stable current switching control. Its low on-resistance helps reduce power loss, while being able to handle high currents to ensure efficient and smooth operation of the motor.
3. **Solar inverter**
This MOSFET can be widely used in inverters of photovoltaic systems as an efficient power switching element. In solar inverters, SiHG25N40D-E3-VB can be used in the process of converting DC to AC, where its high withstand voltage and low on-resistance characteristics enable it to operate efficiently under high voltage conditions during the inverter process, improving energy conversion efficiency.
4. **Battery Management System (BMS)**
In the battery management system, SIHG25N40D-E3-VB can be used in the battery charge and discharge control circuit. Its high withstand voltage and high current capabilities make it suitable for handling high-power battery systems, especially in high-power applications such as electric vehicles and power tools, which can effectively improve the efficiency and safety of battery charging and discharging.
5. **Power supply and conversion equipment**
In power supply and conversion equipment (such as UPS uninterruptible power supply, industrial power converter, etc.), SiHG25N40D-E3-VB can be used as a high-efficiency switching element for the conversion and management of electric energy. Because it can withstand high voltage (500V) and has low on-resistance, this MOSFET can ensure that these power devices can operate efficiently and stably under high load.
6. **High-efficiency lighting drive system**
In high-efficiency lighting drive systems, such as LED lighting drive power supplies, SiHG25N40D-E3-VB as a switching element can ensure low power loss and provide stable current supply. It is particularly suitable for lighting systems that require high power and long-term stable operation.
7. **Power Electronic Converter**
In the field of power electronics, SiHG25N40D-E3-VB is commonly used in various power converters (such as rectifiers, inverters, etc.), especially in situations where high voltage resistance is required (such as power transmission, wind power generation, etc.). Its stable working performance and high voltage carrying capacity can ensure the efficient and stable operation of the system in high power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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