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SIHG22N60S-E3-VB Product details
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SIHG22N60S-E3-VB MOSFET Product Introduction
**SIHG22N60S-E3-VB** is a unipolar N-type MOSFET in TO247 package, designed for medium and high voltage applications, with a maximum drain-source voltage (VDS) of 650V and a maximum gate-source voltage (VGS) of ±30V. With a threshold voltage (Vth) of 3.5V and a low on-resistance (RDS(ON)) of 160mΩ (VGS = 10V), this MOSFET is suitable for use in applications requiring high voltage and medium current (ID up to 20A). Using SJ_Multi-EPI technology, this MOSFET has excellent switching performance and high voltage withstand characteristics, suitable for a variety of power electronics and power control applications, such as switching power supplies, DC-DC converters, motor control and industrial power management systems.
**SIHG22N60S-E3-VB** is a unipolar N-type MOSFET in TO247 package, designed for medium and high voltage applications, with a maximum drain-source voltage (VDS) of 650V and a maximum gate-source voltage (VGS) of ±30V. With a threshold voltage (Vth) of 3.5V and a low on-resistance (RDS(ON)) of 160mΩ (VGS = 10V), this MOSFET is suitable for use in applications requiring high voltage and medium current (ID up to 20A). Using SJ_Multi-EPI technology, this MOSFET has excellent switching performance and high voltage withstand characteristics, suitable for a variety of power electronics and power control applications, such as switching power supplies, DC-DC converters, motor control and industrial power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
SIHG22N60S-E3-VB MOSFET detailed parameter description
| **Parameter** | **Value** |
|-------------------|--------------------------------|
| **Model** | SIHG22N60S-E3-VB |
| **Package** | TO247 |
| **Configuration** | Unipolar N-type MOSFET |
| **Maximum drain-source voltage** | 650V |
| **Maximum gate-source voltage** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 160mΩ (VGS=10V) |
| **Maximum drain current (ID)** | 20A |
| **Technology** | SJ_Multi-EPI technology|
| **Parameter** | **Value** |
|-------------------|--------------------------------|
| **Model** | SIHG22N60S-E3-VB |
| **Package** | TO247 |
| **Configuration** | Unipolar N-type MOSFET |
| **Maximum drain-source voltage** | 650V |
| **Maximum gate-source voltage** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 160mΩ (VGS=10V) |
| **Maximum drain current (ID)** | 20A |
| **Technology** | SJ_Multi-EPI technology|
Domain and module applications：
SIHG22N60S-E3-VB MOSFET application areas and module examples
1. **Switching Power Supply (SMPS)**
SIHG22N60S-E3-VB is suitable for various switching power supply (SMPS) modules, especially for power supply systems with high voltage input. The maximum drain-source voltage of MOSFET is 650V, which can effectively handle AC-DC conversion with high voltage input. Its on-resistance of 160mΩ is relatively stable under high current and is suitable for switching operations in high voltage and high power applications. Common applications include communication power supplies, industrial power supplies, computer power supplies, and lighting power supplies.
2. **DC-DC Converters**
This MOSFET is also very suitable for use in DC-DC converters, especially buck or boost converters for high input voltage systems. Its low on-resistance and large current carrying capacity (maximum drain current 20A) enable it to effectively regulate voltage and current conversion, and is widely used in industrial equipment, medical equipment, LED driver power supplies and other occasions that require stable current and voltage output.
3. **Power tool and motor drive control**
SIHG22N60S-E3-VB also has important applications in power tools and motor drive control systems. Its 650V withstand voltage and 20A current carrying capacity make it very suitable for handling motor drive and control circuits. MOSFET can be used to switch current efficiently, providing precise current regulation in power tools, motor drives, robot control and other fields to ensure efficient operation of motors.
4. **Battery Management System (BMS)**
In the battery management system (BMS), MOSFET is used for charging and discharging control of battery packs. Due to its low on-resistance, SIHG22N60S-E3-VB can effectively reduce the power loss caused by current switching during battery management. This is particularly important for electric vehicles (EV) and energy storage systems, providing efficient and precise current regulation during charging and discharging.
5. **Power Factor Correction (PFC) Circuit**
SIHG22N60S-E3-VB can be used in power factor correction (PFC) circuits to optimize the power factor of the power input. In AC-DC power systems, MOSFETs can help regulate the current waveform, reduce reactive power in the power system, improve the power factor, and reduce energy loss. It is suitable for a variety of power conversion applications, including power factor correction circuits for industrial power supplies and home appliance power supplies.
6. **Home Appliance Power Supply**
SIHG22N60S-E3-VB is also widely used in home appliance power supplies, such as power modules for home appliances such as air conditioners, refrigerators, and washing machines. Its high withstand voltage (650V) and high current handling capabilities enable it to cope with the high power conversion needs in these devices while maintaining low heat loss and high efficiency performance.
1. **Switching Power Supply (SMPS)**
SIHG22N60S-E3-VB is suitable for various switching power supply (SMPS) modules, especially for power supply systems with high voltage input. The maximum drain-source voltage of MOSFET is 650V, which can effectively handle AC-DC conversion with high voltage input. Its on-resistance of 160mΩ is relatively stable under high current and is suitable for switching operations in high voltage and high power applications. Common applications include communication power supplies, industrial power supplies, computer power supplies, and lighting power supplies.
2. **DC-DC Converters**
This MOSFET is also very suitable for use in DC-DC converters, especially buck or boost converters for high input voltage systems. Its low on-resistance and large current carrying capacity (maximum drain current 20A) enable it to effectively regulate voltage and current conversion, and is widely used in industrial equipment, medical equipment, LED driver power supplies and other occasions that require stable current and voltage output.
3. **Power tool and motor drive control**
SIHG22N60S-E3-VB also has important applications in power tools and motor drive control systems. Its 650V withstand voltage and 20A current carrying capacity make it very suitable for handling motor drive and control circuits. MOSFET can be used to switch current efficiently, providing precise current regulation in power tools, motor drives, robot control and other fields to ensure efficient operation of motors.
4. **Battery Management System (BMS)**
In the battery management system (BMS), MOSFET is used for charging and discharging control of battery packs. Due to its low on-resistance, SIHG22N60S-E3-VB can effectively reduce the power loss caused by current switching during battery management. This is particularly important for electric vehicles (EV) and energy storage systems, providing efficient and precise current regulation during charging and discharging.
5. **Power Factor Correction (PFC) Circuit**
SIHG22N60S-E3-VB can be used in power factor correction (PFC) circuits to optimize the power factor of the power input. In AC-DC power systems, MOSFETs can help regulate the current waveform, reduce reactive power in the power system, improve the power factor, and reduce energy loss. It is suitable for a variety of power conversion applications, including power factor correction circuits for industrial power supplies and home appliance power supplies.
6. **Home Appliance Power Supply**
SIHG22N60S-E3-VB is also widely used in home appliance power supplies, such as power modules for home appliances such as air conditioners, refrigerators, and washing machines. Its high withstand voltage (650V) and high current handling capabilities enable it to cope with the high power conversion needs in these devices while maintaining low heat loss and high efficiency performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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