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SIHG22N60E-E3-VB Product details
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SIHG22N60E-E3-VB is a high-voltage N-type MOSFET packaged in TO247 and using SJ_Multi-EPI technology. The device has a maximum drain-source voltage (VDS) of 650V and is suitable for medium and high voltage power management and switch control applications. Its gate-source voltage (VGS) is ±30V and its threshold voltage (Vth) is 3.5V, providing stable switching performance. The MOSFET has an on-resistance (RDS(ON)) of 160mΩ (at VGS=10V) and a maximum drain current (ID) of 20A. With its high voltage and low on-resistance, the SIHG22N60E-E3-VB is able to provide excellent performance in high current and high efficiency applications, and is particularly suitable for high voltage power supplies, inverters, and motor drive systems.
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SIHG22N60E-E3-VB is a high-voltage N-type MOSFET packaged in TO247 and using SJ_Multi-EPI technology. The device has a maximum drain-source voltage (VDS) of 650V and is suitable for medium and high voltage power management and switch control applications. Its gate-source voltage (VGS) is ±30V and its threshold voltage (Vth) is 3.5V, providing stable switching performance. The MOSFET has an on-resistance (RDS(ON)) of 160mΩ (at VGS=10V) and a maximum drain current (ID) of 20A. With its high voltage and low on-resistance, the SIHG22N60E-E3-VB is able to provide excellent performance in high current and high efficiency applications, and is particularly suitable for high voltage power supplies, inverters, and motor drive systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
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- **Package type**: TO247
- **Configuration**: Single channel N-type
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON)**: 160mΩ (VGS=10V)
- **ID (drain current)**: 20A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55℃ to +150℃
- **Package type**: TO247
- **Configuration**: Single channel N-type
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON)**: 160mΩ (VGS=10V)
- **ID (drain current)**: 20A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55℃ to +150℃
Domain and module applications：
SIHG22N60E-E3-VB is suitable for high-voltage, high-power power management and switching applications, especially in environments that require efficient current control and low conduction losses. Its maximum drain-source voltage is 650V, making it suitable for applications such as medium- and high-voltage DC-DC converters, AC-DC power supplies, photovoltaic inverters, UPS (uninterruptible power supplies) and battery chargers.
In motor drive systems, the high current carrying capacity (maximum 20A) of the SIHG22N60E-E3-VB makes it an ideal choice in high-efficiency motor controllers, providing stable current switching and reducing energy loss and heat generation. In addition, the low RDS(ON) characteristics of this MOSFET make it excel in high-efficiency inverters and power amplifiers that switch frequently, making it particularly suitable for industrial and home appliance electrical equipment that require high efficiency and reliability.
In industrial automation and electrical drive systems, SIHG22N60E-E3-VB can also be used in high-power inverter applications, providing high-voltage control and good switching performance to meet the needs of harsh industrial environments. The device is also suitable for renewable energy systems (such as solar inverters), providing efficient and stable performance for power conversion. Due to its wide temperature range, the MOSFET can operate in extreme environments and is suitable for industrial applications with large temperature differences and work in high temperature environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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