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SIHG22N50D-GE3-VB Product details
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SIHG22N50D-GE3-VB MOSFET Product Introduction
SIHG22N50D-GE3-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in a TO247 package, designed for high voltage and high current applications. This MOSFET has a withstand voltage of 500V and is suitable for high voltage power conversion, power tool drive, industrial power supply and other fields. Its maximum gate-source voltage (VGS) is ±30V and has a turn-on voltage (Vth) of 3.8V, making it suitable for applications with low switching voltage requirements. The device has an on-resistance (RDS(ON)) of 80mΩ@VGS=10V, supports a maximum leakage current of 40A, has low conduction losses, and can effectively improve system efficiency. The use of SJ_Multi-EPI technology gives this MOSFET efficient switching characteristics and excellent thermal management capabilities, making it suitable for applications requiring high power density and thermal stability.
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SIHG22N50D-GE3-VB is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) in a TO247 package, designed for high voltage and high current applications. This MOSFET has a withstand voltage of 500V and is suitable for high voltage power conversion, power tool drive, industrial power supply and other fields. Its maximum gate-source voltage (VGS) is ±30V and has a turn-on voltage (Vth) of 3.8V, making it suitable for applications with low switching voltage requirements. The device has an on-resistance (RDS(ON)) of 80mΩ@VGS=10V, supports a maximum leakage current of 40A, has low conduction losses, and can effectively improve system efficiency. The use of SJ_Multi-EPI technology gives this MOSFET efficient switching characteristics and excellent thermal management capabilities, making it suitable for applications requiring high power density and thermal stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
SIHG22N50D-GE3-VB MOSFET Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
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- **Package type**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
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Domain and module applications：
Applicable fields and module examples
1. **High-efficiency power conversion and switching power supply (SMPS)**
- **Application scenarios**: SIHG22N50D-GE3-VB is very suitable for high-efficiency power conversion modules, especially in applications that require high voltage resistance and high current handling. Its 500V voltage resistance enables it to work stably under high voltage input conditions, while the lower on-resistance (RDS(ON)) can effectively reduce conduction losses and improve efficiency. In switching power supplies (SMPS) and DC-DC converters, this MOSFET provides higher switching speeds and low heat losses, allowing power modules to convert energy more efficiently.
2. **Industrial power supply and power conversion system**
- **Application scenarios**: In industrial power supplies and power conversion systems, SIHG22N50D-GE3-VB can be used as a high-power switch or rectifier. Its 40A leakage current and 500V withstand voltage make it very suitable for high-power power systems such as UPS (uninterruptible power supply), inverters, etc. Its SJ_Multi-EPI technology provides good thermal stability and can maintain stable performance under long-term high-power loads.
3. **Power tool drive system**
- **Application scenario**: In the drive system of power tools, SIHG22N50D-GE3-VB can be used as a motor control switch. Power tools require high current drive, and the high current handling capability (maximum 40A) and low on-resistance of this MOSFET make it very suitable for battery-driven power tools such as electric drills, lawn mowers, etc. It provides smooth current flow, reduces power loss, and prolongs battery life.
4. **Electric vehicle charging system**
- **Application scenario**: SIHG22N50D-GE3-VB is also widely used in electric vehicle charging systems, especially in charging stations and battery management systems (BMS). Its high withstand voltage and high leakage current capabilities enable it to handle the energy flow during high-voltage charging and high-current charging of electric vehicles. In these applications, low RDS(ON) makes the charging process more efficient, reducing energy loss and heat generation during battery charging.
5. **Automotive power module and battery management system**
- **Application scenario**: In automotive power modules and battery management systems, SIHG22N50D-GE3-VB can be used for battery charging current control and power switching. Due to its high withstand voltage and high current carrying capacity, this MOSFET can work stably in the battery management system to ensure safe and efficient battery charging and discharging processes. It can provide reliable current control under high power demand and high voltage conditions to extend battery life.
These application scenarios demonstrate the excellent performance of SIHG22N50D-GE3-VB in the field of high voltage and high current. Whether in the fields of high-efficiency power conversion, industrial power supply, power tool drive, or electric vehicle charging system, this MOSFET can provide a reliable solution for the design to ensure system efficiency and stability.
1. **High-efficiency power conversion and switching power supply (SMPS)**
- **Application scenarios**: SIHG22N50D-GE3-VB is very suitable for high-efficiency power conversion modules, especially in applications that require high voltage resistance and high current handling. Its 500V voltage resistance enables it to work stably under high voltage input conditions, while the lower on-resistance (RDS(ON)) can effectively reduce conduction losses and improve efficiency. In switching power supplies (SMPS) and DC-DC converters, this MOSFET provides higher switching speeds and low heat losses, allowing power modules to convert energy more efficiently.
2. **Industrial power supply and power conversion system**
- **Application scenarios**: In industrial power supplies and power conversion systems, SIHG22N50D-GE3-VB can be used as a high-power switch or rectifier. Its 40A leakage current and 500V withstand voltage make it very suitable for high-power power systems such as UPS (uninterruptible power supply), inverters, etc. Its SJ_Multi-EPI technology provides good thermal stability and can maintain stable performance under long-term high-power loads.
3. **Power tool drive system**
- **Application scenario**: In the drive system of power tools, SIHG22N50D-GE3-VB can be used as a motor control switch. Power tools require high current drive, and the high current handling capability (maximum 40A) and low on-resistance of this MOSFET make it very suitable for battery-driven power tools such as electric drills, lawn mowers, etc. It provides smooth current flow, reduces power loss, and prolongs battery life.
4. **Electric vehicle charging system**
- **Application scenario**: SIHG22N50D-GE3-VB is also widely used in electric vehicle charging systems, especially in charging stations and battery management systems (BMS). Its high withstand voltage and high leakage current capabilities enable it to handle the energy flow during high-voltage charging and high-current charging of electric vehicles. In these applications, low RDS(ON) makes the charging process more efficient, reducing energy loss and heat generation during battery charging.
5. **Automotive power module and battery management system**
- **Application scenario**: In automotive power modules and battery management systems, SIHG22N50D-GE3-VB can be used for battery charging current control and power switching. Due to its high withstand voltage and high current carrying capacity, this MOSFET can work stably in the battery management system to ensure safe and efficient battery charging and discharging processes. It can provide reliable current control under high power demand and high voltage conditions to extend battery life.
These application scenarios demonstrate the excellent performance of SIHG22N50D-GE3-VB in the field of high voltage and high current. Whether in the fields of high-efficiency power conversion, industrial power supply, power tool drive, or electric vehicle charging system, this MOSFET can provide a reliable solution for the design to ensure system efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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