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SIHG20N50C-E3-VB Product details
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SIHG20N50C-E3-VB MOSFET Detailed Product Introduction
**Product Name**: SIHG20N50C-E3-VB
**Package Type**: TO247
**Configuration**: Unipolar N-channel
**Technology Type**: SJ_Multi-EPI Technology
**Maximum Drain-Source Voltage (VDS)**: 500V
**Maximum Gate-Source Voltage (VGS)**: ±30V
**Threshold Voltage (Vth)**: 3.8V
**On-Resistance (RDS(ON))**: 80mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 40A
**Product Overview**:
SIHG20N50C-E3-VB It is a high voltage N-channel MOSFET in TO247 package, using advanced SJ_Multi-EPI technology, with low on-resistance (RDS(ON)) and high current handling capability. Its maximum drain-source voltage is 500V, making it suitable for high voltage power supply control and power regulation systems, and has a drain current capability of 40A, which is very suitable for high power load applications. This MOSFET also has a higher threshold voltage (Vth) of 3.8V, which allows it to turn on at a low gate voltage, so it can be used in a variety of application scenarios requiring high switching speed and low energy consumption, such as high-efficiency power management, motor drive and industrial power modules.
**Product Name**: SIHG20N50C-E3-VB
**Package Type**: TO247
**Configuration**: Unipolar N-channel
**Technology Type**: SJ_Multi-EPI Technology
**Maximum Drain-Source Voltage (VDS)**: 500V
**Maximum Gate-Source Voltage (VGS)**: ±30V
**Threshold Voltage (Vth)**: 3.8V
**On-Resistance (RDS(ON))**: 80mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 40A
**Product Overview**:
SIHG20N50C-E3-VB It is a high voltage N-channel MOSFET in TO247 package, using advanced SJ_Multi-EPI technology, with low on-resistance (RDS(ON)) and high current handling capability. Its maximum drain-source voltage is 500V, making it suitable for high voltage power supply control and power regulation systems, and has a drain current capability of 40A, which is very suitable for high power load applications. This MOSFET also has a higher threshold voltage (Vth) of 3.8V, which allows it to turn on at a low gate voltage, so it can be used in a variety of application scenarios requiring high switching speed and low energy consumption, such as high-efficiency power management, motor drive and industrial power modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
SIHG20N50C-E3-VB MOSFET Detailed parameter description
- **VDS (maximum drain-source voltage)**: 500V
The maximum drain-source voltage of this MOSFET is 500V, which is suitable for high-voltage power management and control systems. It can work stably at a high voltage of 500V and is suitable for applications that handle high-power, high-voltage loads, such as power adapters, inverters, etc.
- **VGS (maximum gate-source voltage)**: ±30V
Supports a maximum gate-source voltage of ±30V, making it compatible with a variety of control circuits. For standard voltage-driven power switching applications, this range of gate-source voltage provides sufficient flexibility to ensure that the MOSFET can be turned on or off efficiently.
- **Vth (threshold voltage)**: 3.8V
The threshold voltage of 3.8V means that the MOSFET starts to turn on when the gate voltage reaches 3.8V. The relatively high threshold voltage makes it suitable for some applications that require a higher driving voltage, and can avoid false turn-on under low voltage conditions.
- **RDS(ON) (on-resistance)**: 80mΩ @ VGS = 10V
The on-resistance is 80mΩ (at VGS = 10V), which enables the MOSFET to reduce power consumption and improve efficiency during efficient switching. Low on-resistance means that it can minimize energy loss when turned on, which is suitable for power conversion systems with high efficiency requirements.
- **ID (maximum drain current)**: 40A
The maximum drain current is 40A, which means that the MOSFET can operate stably under high current loads and is suitable for high power switching and load regulation applications. Its large current carrying capacity makes it suitable for high current power regulation and drive systems.
- **VDS (maximum drain-source voltage)**: 500V
The maximum drain-source voltage of this MOSFET is 500V, which is suitable for high-voltage power management and control systems. It can work stably at a high voltage of 500V and is suitable for applications that handle high-power, high-voltage loads, such as power adapters, inverters, etc.
- **VGS (maximum gate-source voltage)**: ±30V
Supports a maximum gate-source voltage of ±30V, making it compatible with a variety of control circuits. For standard voltage-driven power switching applications, this range of gate-source voltage provides sufficient flexibility to ensure that the MOSFET can be turned on or off efficiently.
- **Vth (threshold voltage)**: 3.8V
The threshold voltage of 3.8V means that the MOSFET starts to turn on when the gate voltage reaches 3.8V. The relatively high threshold voltage makes it suitable for some applications that require a higher driving voltage, and can avoid false turn-on under low voltage conditions.
- **RDS(ON) (on-resistance)**: 80mΩ @ VGS = 10V
The on-resistance is 80mΩ (at VGS = 10V), which enables the MOSFET to reduce power consumption and improve efficiency during efficient switching. Low on-resistance means that it can minimize energy loss when turned on, which is suitable for power conversion systems with high efficiency requirements.
- **ID (maximum drain current)**: 40A
The maximum drain current is 40A, which means that the MOSFET can operate stably under high current loads and is suitable for high power switching and load regulation applications. Its large current carrying capacity makes it suitable for high current power regulation and drive systems.
Domain and module applications：
SIHG20N50C-E3-VB MOSFET Application Examples
1. **High-efficiency power conversion system**:
SIHG20N50C-E3-VB is suitable for a variety of high-efficiency power converters and DC-DC converters. Its maximum drain-source voltage of 500V and low on-resistance make it very suitable for handling high-voltage power supplies and high-current loads. In efficient power management and conversion systems, this MOSFET can effectively control the flow of power, reduce energy losses, and ensure efficient operation of the system.
2. **Solar inverter**:
Due to its 500V drain-source voltage capability, SIHG20N50C-E3-VB is suitable for the switching link in solar inverters. Solar inverters require high-voltage and high-current MOSFETs to ensure efficient power conversion, converting the DC voltage of solar panels into AC voltage for home or grid use. This MOSFET provides stable switching performance to help improve the efficiency and reliability of the inverter.
3. **Motor Drive System**:
SIHG20N50C-E3-VB has great application potential in motor drive systems, especially in high-power motor control and power tool drive. Its high voltage and high current capabilities make it very suitable for motor starting and control, and can effectively regulate current and achieve precise control.
4. **Electric Vehicle (EV) Power System**:
In electric vehicle power management systems, SIHG20N50C-E3-VB can be used to drive battery management systems, DC-DC converters, and other power conversion modules. It is able to handle high voltage and high current, ensuring stable charging of battery packs and efficient operation of electric drives. In addition, efficient conversion in electric vehicle power systems is crucial to extend battery life and optimize energy efficiency.
5. **Industrial Power System**:
SIHG20N50C-E3-VB also performs well in industrial power modules and power conditioning systems. It is suitable for applications in industrial equipment that require high power and high efficiency. It can provide stable current control in harsh environments, especially in power conversion, stable output and other occasions.
6. **UPS (Uninterruptible Power Supply) System**:
Due to its high current carrying capacity and stable performance, SIHG20N50C-E3-VB is also widely used in uninterruptible power supply (UPS) systems. UPS systems need to be able to provide a stable power supply when the power grid is out of power, and MOSFET plays a key switching role in it to ensure that the battery pack can effectively supply power to the load.
In summary, SIHG20N50C-E3-VB MOSFET is suitable for power management systems, motor drives, battery management, solar inverters, industrial power supplies and UPS with high voltage and high current control. Its high withstand voltage of 500V, current carrying capacity of 40A and low on-resistance make it an ideal choice for various power conversion and power conditioning applications.
1. **High-efficiency power conversion system**:
SIHG20N50C-E3-VB is suitable for a variety of high-efficiency power converters and DC-DC converters. Its maximum drain-source voltage of 500V and low on-resistance make it very suitable for handling high-voltage power supplies and high-current loads. In efficient power management and conversion systems, this MOSFET can effectively control the flow of power, reduce energy losses, and ensure efficient operation of the system.
2. **Solar inverter**:
Due to its 500V drain-source voltage capability, SIHG20N50C-E3-VB is suitable for the switching link in solar inverters. Solar inverters require high-voltage and high-current MOSFETs to ensure efficient power conversion, converting the DC voltage of solar panels into AC voltage for home or grid use. This MOSFET provides stable switching performance to help improve the efficiency and reliability of the inverter.
3. **Motor Drive System**:
SIHG20N50C-E3-VB has great application potential in motor drive systems, especially in high-power motor control and power tool drive. Its high voltage and high current capabilities make it very suitable for motor starting and control, and can effectively regulate current and achieve precise control.
4. **Electric Vehicle (EV) Power System**:
In electric vehicle power management systems, SIHG20N50C-E3-VB can be used to drive battery management systems, DC-DC converters, and other power conversion modules. It is able to handle high voltage and high current, ensuring stable charging of battery packs and efficient operation of electric drives. In addition, efficient conversion in electric vehicle power systems is crucial to extend battery life and optimize energy efficiency.
5. **Industrial Power System**:
SIHG20N50C-E3-VB also performs well in industrial power modules and power conditioning systems. It is suitable for applications in industrial equipment that require high power and high efficiency. It can provide stable current control in harsh environments, especially in power conversion, stable output and other occasions.
6. **UPS (Uninterruptible Power Supply) System**:
Due to its high current carrying capacity and stable performance, SIHG20N50C-E3-VB is also widely used in uninterruptible power supply (UPS) systems. UPS systems need to be able to provide a stable power supply when the power grid is out of power, and MOSFET plays a key switching role in it to ensure that the battery pack can effectively supply power to the load.
In summary, SIHG20N50C-E3-VB MOSFET is suitable for power management systems, motor drives, battery management, solar inverters, industrial power supplies and UPS with high voltage and high current control. Its high withstand voltage of 500V, current carrying capacity of 40A and low on-resistance make it an ideal choice for various power conversion and power conditioning applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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