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SIHG17N60D-E3-VB Product details
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Product Introduction:
**SIHG17N60D-E3-VB** is a high-voltage, high-reliability N-channel MOSFET in TO247 package, suitable for various medium and high voltage power control applications. This model has a maximum drain-source voltage of 650V, has a high voltage tolerance, and is suitable for high-voltage switches in power electronic equipment. Its gate threshold voltage (V_th) is 3.5V, which can achieve switching control at a lower gate voltage. The on-resistance (R_DS(on)) of the MOSFET is 300mΩ@V_GS = 10V, which is suitable for operation in situations requiring lower conduction losses and higher current carrying capacity (maximum 15A). This product uses **SJ_Multi-EPI** technology to optimize switching performance and conduction characteristics, and is widely used in industrial power supplies, power tools and other systems requiring high voltage and high power control.
**SIHG17N60D-E3-VB** is a high-voltage, high-reliability N-channel MOSFET in TO247 package, suitable for various medium and high voltage power control applications. This model has a maximum drain-source voltage of 650V, has a high voltage tolerance, and is suitable for high-voltage switches in power electronic equipment. Its gate threshold voltage (V_th) is 3.5V, which can achieve switching control at a lower gate voltage. The on-resistance (R_DS(on)) of the MOSFET is 300mΩ@V_GS = 10V, which is suitable for operation in situations requiring lower conduction losses and higher current carrying capacity (maximum 15A). This product uses **SJ_Multi-EPI** technology to optimize switching performance and conduction characteristics, and is widely used in industrial power supplies, power tools and other systems requiring high voltage and high power control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | 300mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Model: ** SIHG17N60D-E3-VB
- **Package: ** TO247
- **Configuration: ** Single-N-Channel
- **Maximum drain-source voltage (V_DS): ** 650V
- **Maximum gate-source voltage (V_GS): ** ±30V
- **Gate threshold voltage (V_th): ** 3.5V
- **On-resistance (R_DS(on)): ** 300mΩ @ V_GS = 10V
- **Maximum drain current (I_D): ** 15A
- **Technology: ** SJ_Multi-EPI
- **Model: ** SIHG17N60D-E3-VB
- **Package: ** TO247
- **Configuration: ** Single-N-Channel
- **Maximum drain-source voltage (V_DS): ** 650V
- **Maximum gate-source voltage (V_GS): ** ±30V
- **Gate threshold voltage (V_th): ** 3.5V
- **On-resistance (R_DS(on)): ** 300mΩ @ V_GS = 10V
- **Maximum drain current (I_D): ** 15A
- **Technology: ** SJ_Multi-EPI
Domain and module applications：
Applicable fields and module examples:
**1. High-voltage power management system: **
The high voltage withstand capability (650V) of SiHG17N60D-E3-VB MOSFET makes it very suitable for high-voltage power management systems, especially in power conversion and power drive applications. It is widely used in power electronic devices such as AC-DC power supplies and DC-DC converters, and can provide efficient power transmission and management.
**2. Power tools and household appliances: **
This MOSFET can be used in power tools, electric drive systems and other household appliances to undertake the tasks of power control and power conversion. In power tools, SiHG17N60D-E3-VB can be used to provide stable operation in high current and high voltage environments, and ensure low loss and high efficiency, extend battery life, and improve system performance.
**3. Switching Power Supply (SMPS): **
In the switching power supply (SMPS), SiHG17N60D-E3-VB MOSFET is used as a switching element, which can work efficiently under high voltage and high current conditions. Low on-resistance (R_DS(on)) and high current carrying capacity ensure the high efficiency of the switching power supply, reduce switching losses, and are widely used in telecommunications, computer power supplies and other high-frequency conversion power modules.
**4. Power Systems and Inverters: **
This MOSFET can be used in solar inverters, UPS (uninterruptible power supply) systems and other power systems. It provides reliable switching performance under high voltage and high current conditions and has excellent power conversion efficiency. In solar inverters, energy conversion efficiency can be improved by optimizing switching and reducing losses to ensure system stability.
**5. Electric vehicles: **
The high voltage tolerance and high current handling capabilities of SiHG17N60D-E3-VB make it suitable for battery management systems (BMS) and motor drive systems in electric vehicles. MOSFET can carry high currents in applications such as electric vehicles and hybrid vehicles, achieving efficient power conversion and drive control.
**6. Industrial equipment: **
In industrial automation control systems, SiHG17N60D-E3-VB MOSFET can be used for power switches in various inverters, motor control and robotic systems. Due to its high voltage and high current characteristics, it can withstand high loads under complex working conditions and maintain system stability and reliability.
These characteristics make SiHG17N60D-E3-VB MOSFET an indispensable and important component in high-voltage power systems, and are widely used in power management, energy conversion, industrial automation and other fields.
**1. High-voltage power management system: **
The high voltage withstand capability (650V) of SiHG17N60D-E3-VB MOSFET makes it very suitable for high-voltage power management systems, especially in power conversion and power drive applications. It is widely used in power electronic devices such as AC-DC power supplies and DC-DC converters, and can provide efficient power transmission and management.
**2. Power tools and household appliances: **
This MOSFET can be used in power tools, electric drive systems and other household appliances to undertake the tasks of power control and power conversion. In power tools, SiHG17N60D-E3-VB can be used to provide stable operation in high current and high voltage environments, and ensure low loss and high efficiency, extend battery life, and improve system performance.
**3. Switching Power Supply (SMPS): **
In the switching power supply (SMPS), SiHG17N60D-E3-VB MOSFET is used as a switching element, which can work efficiently under high voltage and high current conditions. Low on-resistance (R_DS(on)) and high current carrying capacity ensure the high efficiency of the switching power supply, reduce switching losses, and are widely used in telecommunications, computer power supplies and other high-frequency conversion power modules.
**4. Power Systems and Inverters: **
This MOSFET can be used in solar inverters, UPS (uninterruptible power supply) systems and other power systems. It provides reliable switching performance under high voltage and high current conditions and has excellent power conversion efficiency. In solar inverters, energy conversion efficiency can be improved by optimizing switching and reducing losses to ensure system stability.
**5. Electric vehicles: **
The high voltage tolerance and high current handling capabilities of SiHG17N60D-E3-VB make it suitable for battery management systems (BMS) and motor drive systems in electric vehicles. MOSFET can carry high currents in applications such as electric vehicles and hybrid vehicles, achieving efficient power conversion and drive control.
**6. Industrial equipment: **
In industrial automation control systems, SiHG17N60D-E3-VB MOSFET can be used for power switches in various inverters, motor control and robotic systems. Due to its high voltage and high current characteristics, it can withstand high loads under complex working conditions and maintain system stability and reliability.
These characteristics make SiHG17N60D-E3-VB MOSFET an indispensable and important component in high-voltage power systems, and are widely used in power management, energy conversion, industrial automation and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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