SiHG16N50C-VB Product details
Product introduction:
**SiHG16N50C-VB** is a high-performance N-type power MOSFET in TO247 package, designed for high voltage (500V) and medium current (40A) applications. This MOSFET adopts **SJ_Multi-EPI** technology to optimize its conductivity and switching characteristics, and has a low on-resistance (RDS(ON) is 80mΩ @ VGS = 10V), which enables it to have low switching losses while ensuring high power efficiency. The maximum drain-source voltage of this device is 500V, which is suitable for power electronic devices that require high voltage and medium current, such as high-voltage power supplies, inverters, AC motor drives, and solar inverters. Its high voltage resistance and stability make it perform well in industrial applications, especially for applications such as high-power converters and power tools.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**:
- 80mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology type**: SJ_Multi-EPI technology (optimization technology of polycrystalline structure, which improves switching speed and reduces loss)
Domain and module applications:
1. **High-voltage power management system**
SiHG16N50C-VB can be widely used in high-voltage power management systems, especially in some high-power power converters. In AC-DC converters, DC-DC converters and PFC (power factor correction) circuits, it can effectively manage high-voltage power input and output stable voltage and current. Its high voltage (500V) and low on-resistance (80mΩ) make it suitable for applications requiring efficient power conversion, especially in industrial power supplies, communication equipment power supplies and other high-power power supplies, providing reliable current switching and conversion capabilities.
2. **Solar inverter**
SiHG16N50C-VB is suitable for inverter modules in solar power generation systems, especially those requiring high-voltage operation. Since the output voltage of solar panels is usually high (up to hundreds of volts), the high withstand voltage (500V) characteristics of this MOSFET are very suitable for converting the DC power of solar panels into AC power. MOSFET can effectively realize current switching, reduce energy loss during the inversion process, and improve system efficiency.
3. **Power tool drive system**
In the drive system of power tools, SiHG16N50C-VB can be used to control the motor drive circuit, providing reliable current switching and power regulation. Its high current carrying capacity (40A) makes it suitable for high-power power tools such as electric drills and electric saws, and can stably control the start, speed regulation and stop of the motor. By using this MOSFET, it can be ensured that the tool maintains high efficiency and low heat generation during long-term operation.
4. **AC motor drive system**
In the drive system that needs to control high-power AC motors, SiHG16N50C-VB can be used as a power switching element to achieve efficient current regulation and motor control. Especially in industrial applications, such as high-power motor systems such as fans, pumps, and air conditioners, this MOSFET can provide high voltage control and low on-resistance, reduce power loss, and improve the overall efficiency of the system.
5. **UPS (Uninterruptible Power Supply) System**
In the uninterruptible power supply system, SiHG16N50C-VB can be used for power switching and voltage regulation control. UPS systems need to handle high voltages (such as AC input voltage of 220V or 380V) and output DC power to the load stably. The high withstand voltage (500V) and high current capability (40A) of MOSFET enable it to effectively undertake power switching and protection functions. In the event of a power outage, it can also ensure a smooth transition of current to ensure the safe and stable operation of the load equipment.
6. **Power electronics field (such as inverters and rectifiers)**
SiHG16N50C-VB is very useful in various power electronic modules, especially those involving high power processing such as inversion and rectification. For example, in DC motor drives, wind power generation systems, and electric vehicle charging systems, MOSFETs can be used to achieve DC to AC power conversion and provide efficient and stable current regulation. Due to its high withstand voltage and low on-resistance, SiHG16N50C-VB can effectively reduce heat generation in these applications and improve system reliability and efficiency.
7. **Industrial Automation System**
In industrial automation control systems, SiHG16N50C-VB can be used as a load switch and current regulation element, especially in those occasions that require medium-to-high voltage and high-current switching. For example, in variable frequency drives (VFDs) and power control modules of automated production lines, this MOSFET can provide precise power control and reduce system losses to ensure smooth operation of machinery and equipment.
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