中文
English
SiHFZ48S-GE3-VB Product details
Back to previous pageProduct introduction：
SiHFZ48S-GE3-VB Product Introduction
SiHFZ48S-GE3-VB is a high-efficiency single N-channel MOSFET in a TO263 package, designed for low-voltage and high-current applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, which is suitable for various power management and switch control systems. Its threshold voltage (Vth) is 1.7V, indicating that it can be turned on at a lower gate voltage, suitable for low-voltage drive systems. This MOSFET has a very low on-resistance (RDS(ON)), which is 12mΩ at VGS = 4.5V and 11mΩ at VGS = 10V, which means that it can effectively reduce conduction losses and improve system efficiency. The maximum drain current (ID) is 75A, which is suitable for applications that require high current carrying capacity. The use of Trench technology can increase switching speed and reduce on-resistance, further improving the overall efficiency and performance of the system.
SiHFZ48S-GE3-VB is a high-efficiency single N-channel MOSFET in a TO263 package, designed for low-voltage and high-current applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, which is suitable for various power management and switch control systems. Its threshold voltage (Vth) is 1.7V, indicating that it can be turned on at a lower gate voltage, suitable for low-voltage drive systems. This MOSFET has a very low on-resistance (RDS(ON)), which is 12mΩ at VGS = 4.5V and 11mΩ at VGS = 10V, which means that it can effectively reduce conduction losses and improve system efficiency. The maximum drain current (ID) is 75A, which is suitable for applications that require high current carrying capacity. The use of Trench technology can increase switching speed and reduce on-resistance, further improving the overall efficiency and performance of the system.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
SiHFZ48S-GE3-VB Detailed parameter description
| Parameter | Value | Description|
|---------------|------------------------|----------------------------------------|
| **Package** | TO263 | Surface mount package, suitable for high current applications|
| **Configuration** | Single N-type channel | For low-side switch or load switching|
| **Maximum drain-source voltage (VDS)** | 60V | Suitable for low-voltage to medium-voltage applications, supports up to 60V voltage|
| **Gate-source voltage (VGS)** | ±20V | Maximum range of gate voltage|
| **Threshold voltage (Vth)** | 1.7V | Start voltage of MOSFET turn-on|
| **On-resistance (RDS(ON))** | 12mΩ @ VGS = 4.5V | On-resistance at VGS = 4.5V|
| **On-resistance (RDS(ON))** | 11mΩ @ VGS = 10V | On-resistance at VGS = 10V|
| **Maximum drain current (ID)** | 75A | Maximum drain current for high power applications|
| **Technology** | Trench | Trench technology improves conduction performance and switching speed|
| Parameter | Value | Description|
|---------------|------------------------|----------------------------------------|
| **Package** | TO263 | Surface mount package, suitable for high current applications|
| **Configuration** | Single N-type channel | For low-side switch or load switching|
| **Maximum drain-source voltage (VDS)** | 60V | Suitable for low-voltage to medium-voltage applications, supports up to 60V voltage|
| **Gate-source voltage (VGS)** | ±20V | Maximum range of gate voltage|
| **Threshold voltage (Vth)** | 1.7V | Start voltage of MOSFET turn-on|
| **On-resistance (RDS(ON))** | 12mΩ @ VGS = 4.5V | On-resistance at VGS = 4.5V|
| **On-resistance (RDS(ON))** | 11mΩ @ VGS = 10V | On-resistance at VGS = 10V|
| **Maximum drain current (ID)** | 75A | Maximum drain current for high power applications|
| **Technology** | Trench | Trench technology improves conduction performance and switching speed|
Domain and module applications：
Applications and module examples
1. **High-efficiency power management system**
SiHFZ48S-GE3-VB is particularly suitable for use in high-efficiency power management systems due to its low on-resistance (12mΩ) and high current carrying capacity (75A). It can significantly reduce power loss in the current path and improve the efficiency of power modules such as DC-DC converters and AC-DC power supplies, especially in applications that require high current and low loss.
2. **Motor control system**
In motor control systems, especially brushless DC motor (BLDC) drives, SiHFZ48S-GE3-VB can provide high efficiency as a key switching element. Its low on-resistance and high current capability (75A) are very suitable for high-efficiency motor drives, which are particularly important in high-performance electric systems such as electric vehicles, power tools, and robots.
3. **Automotive electronic systems**
SiHFZ48S-GE3-VB can be widely used in power management systems for electric vehicles, hybrid vehicles, and traditional vehicles. It can effectively manage battery voltage, control the charging and discharging process, and provide efficient and stable power supply for on-board electronic devices. Under high current load, MOSFET has excellent performance, helping to reduce power loss and extend battery life.
4. **LED driver power supply**
In LED driver power supply applications, SiHFZ48S-GE3-VB can provide current regulation as an efficient switching element and effectively reduce the energy loss of the system through low on-resistance. This makes it particularly suitable for high-power LED lighting systems, providing stable current output while optimizing power efficiency.
5. **Battery charging system**
In battery chargers, SiHFZ48S-GE3-VB can be used as a current switch to help control the battery charging process. Its 75A maximum drain current makes it suitable for high-current charging applications, such as the charging system of electric vehicles. The low on-resistance of this MOSFET further improves charging efficiency and reduces power loss.
6. **Power management for consumer electronics**
For consumer electronics devices such as laptops, tablets, and smartphones, the SiHFZ48S-GE3-VB is suitable for high-efficiency switch control in power management modules. By optimizing power conversion and current regulation, it can effectively increase the battery life of the device and reduce power loss.
7. **Power management for wireless communication base stations**
In equipment such as communication base stations or data centers, the SiHFZ48S-GE3-VB can serve as a key component for efficient power management. It can handle large currents and efficiently convert power to support the stable operation of base station equipment, especially in communication environments that require high power support.
1. **High-efficiency power management system**
SiHFZ48S-GE3-VB is particularly suitable for use in high-efficiency power management systems due to its low on-resistance (12mΩ) and high current carrying capacity (75A). It can significantly reduce power loss in the current path and improve the efficiency of power modules such as DC-DC converters and AC-DC power supplies, especially in applications that require high current and low loss.
2. **Motor control system**
In motor control systems, especially brushless DC motor (BLDC) drives, SiHFZ48S-GE3-VB can provide high efficiency as a key switching element. Its low on-resistance and high current capability (75A) are very suitable for high-efficiency motor drives, which are particularly important in high-performance electric systems such as electric vehicles, power tools, and robots.
3. **Automotive electronic systems**
SiHFZ48S-GE3-VB can be widely used in power management systems for electric vehicles, hybrid vehicles, and traditional vehicles. It can effectively manage battery voltage, control the charging and discharging process, and provide efficient and stable power supply for on-board electronic devices. Under high current load, MOSFET has excellent performance, helping to reduce power loss and extend battery life.
4. **LED driver power supply**
In LED driver power supply applications, SiHFZ48S-GE3-VB can provide current regulation as an efficient switching element and effectively reduce the energy loss of the system through low on-resistance. This makes it particularly suitable for high-power LED lighting systems, providing stable current output while optimizing power efficiency.
5. **Battery charging system**
In battery chargers, SiHFZ48S-GE3-VB can be used as a current switch to help control the battery charging process. Its 75A maximum drain current makes it suitable for high-current charging applications, such as the charging system of electric vehicles. The low on-resistance of this MOSFET further improves charging efficiency and reduces power loss.
6. **Power management for consumer electronics**
For consumer electronics devices such as laptops, tablets, and smartphones, the SiHFZ48S-GE3-VB is suitable for high-efficiency switch control in power management modules. By optimizing power conversion and current regulation, it can effectively increase the battery life of the device and reduce power loss.
7. **Power management for wireless communication base stations**
In equipment such as communication base stations or data centers, the SiHFZ48S-GE3-VB can serve as a key component for efficient power management. It can handle large currents and efficiently convert power to support the stable operation of base station equipment, especially in communication environments that require high power support.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
