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SiHFZ48RS-GE3-VB Product details
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SiHFZ48RS-GE3-VB MOSFET Product Introduction
**SiHFZ48RS-GE3-VB** is a high-performance unipolar N-type MOSFET in TO263 package with extremely low on-resistance (RDS(ON)) and strong current carrying capacity. Its maximum drain-source voltage (VDS) is 60V and the maximum gate-source voltage (VGS) is ±20V, which is suitable for medium and high voltage power conversion and current control applications. SiHFZ48RS-GE3-VB has a maximum drain current (ID) of 75A, and its on-resistance is only 11mΩ at VGS=10V and 12mΩ at VGS=4.5V, which means it has extremely low power loss and high efficiency when switching high currents. This MOSFET uses Trench technology, which can provide excellent switching performance and is suitable for high-speed switching operations. It is widely used in power systems, drive control and high-efficiency power conversion equipment.
**SiHFZ48RS-GE3-VB** is a high-performance unipolar N-type MOSFET in TO263 package with extremely low on-resistance (RDS(ON)) and strong current carrying capacity. Its maximum drain-source voltage (VDS) is 60V and the maximum gate-source voltage (VGS) is ±20V, which is suitable for medium and high voltage power conversion and current control applications. SiHFZ48RS-GE3-VB has a maximum drain current (ID) of 75A, and its on-resistance is only 11mΩ at VGS=10V and 12mΩ at VGS=4.5V, which means it has extremely low power loss and high efficiency when switching high currents. This MOSFET uses Trench technology, which can provide excellent switching performance and is suitable for high-speed switching operations. It is widely used in power systems, drive control and high-efficiency power conversion equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
SiHFZ48RS-GE3-VB MOSFET detailed parameter description
| **Parameter** | **Value** |
|-------------------|--------------------------------|
| **Model** | SiHFZ48RS-GE3-VB |
| **Package** | TO263 |
| **Configuration** | Unipolar N-type MOSFET |
| **Maximum drain-source voltage** | 60V |
| **Maximum gate-source voltage** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 12mΩ (VGS=4.5V) |
| | 11mΩ (VGS=10V) |
| **Maximum drain current (ID)** | 75A |
| **Technology** | Trench technology|
| **Parameter** | **Value** |
|-------------------|--------------------------------|
| **Model** | SiHFZ48RS-GE3-VB |
| **Package** | TO263 |
| **Configuration** | Unipolar N-type MOSFET |
| **Maximum drain-source voltage** | 60V |
| **Maximum gate-source voltage** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 12mΩ (VGS=4.5V) |
| | 11mΩ (VGS=10V) |
| **Maximum drain current (ID)** | 75A |
| **Technology** | Trench technology|
Domain and module applications：
SiHFZ48RS-GE3-VB MOSFET application areas and module examples
1. **High-efficiency switching power supply (SMPS)**
The low on-resistance (RDS(ON)) and high current carrying capacity of SiHFZ48RS-GE3-VB make it very suitable for use in switching power supplies (SMPS). In the SMPS module, this MOSFET is used for high-frequency switching operations to control the switching state of the current, which is particularly suitable for power systems with medium voltage (60V) input. Its low RDS(ON) characteristics help reduce power losses and improve the overall efficiency of the system, especially suitable for applications in DC-DC converters that require high efficiency.
2. **Electric vehicle (EV) battery management system**
In the battery management system (BMS) of electric vehicles, SiHFZ48RS-GE3-VB can be used for battery charge and discharge control, especially for high current and high-efficiency battery management applications. Its maximum drain current of 75A and low on-resistance ensure low power loss during battery charging and discharging, optimizing battery efficiency. MOSFET controls the current flow of the battery pack, ensuring stable operation of the battery and high efficiency during charging.
3. **DC-DC Converter**
SiHFZ48RS-GE3-VB is suitable for various DC-DC converters, such as buck, boost and inverter converters. In these applications, MOSFET is responsible for switching current to ensure that the voltage is effectively converted from one value to another. Its excellent low RDS(ON) performance helps to improve current handling efficiency and plays an important role in high current and high efficiency power supply systems.
4. **Power Tools and Electrical Drive Systems**
In power tools, motor drives and other industrial electrical control systems, SiHFZ48RS-GE3-VB can be used in high current control circuits, especially for precise control of motor starting and operation. The high current carrying capacity (75A) and low on-resistance (12mΩ) of MOSFET enable it to effectively handle high load currents, and is suitable for various high-efficiency electrical drive applications such as power tools, robots, and automation equipment.
5. **LED Driver**
SiHFZ48RS-GE3-VB is also very suitable for LED driver. LED driver usually requires high-efficiency current switching to ensure stable operation of LED lamps. The low on-resistance of MOSFET can ensure reduced power loss during current control, especially in high-power LED lighting applications such as commercial lighting, street lighting, etc.
6. **Power Factor Correction (PFC) Circuit**
In the power factor correction (PFC) circuit, SiHFZ48RS-GE3-VB can help improve the waveform of the input current, thereby improving the power factor of the power system. In AC-DC power converters, MOSFETs are used to regulate input current and voltage, ensure efficient power factor correction, optimize power use, and reduce energy loss.
1. **High-efficiency switching power supply (SMPS)**
The low on-resistance (RDS(ON)) and high current carrying capacity of SiHFZ48RS-GE3-VB make it very suitable for use in switching power supplies (SMPS). In the SMPS module, this MOSFET is used for high-frequency switching operations to control the switching state of the current, which is particularly suitable for power systems with medium voltage (60V) input. Its low RDS(ON) characteristics help reduce power losses and improve the overall efficiency of the system, especially suitable for applications in DC-DC converters that require high efficiency.
2. **Electric vehicle (EV) battery management system**
In the battery management system (BMS) of electric vehicles, SiHFZ48RS-GE3-VB can be used for battery charge and discharge control, especially for high current and high-efficiency battery management applications. Its maximum drain current of 75A and low on-resistance ensure low power loss during battery charging and discharging, optimizing battery efficiency. MOSFET controls the current flow of the battery pack, ensuring stable operation of the battery and high efficiency during charging.
3. **DC-DC Converter**
SiHFZ48RS-GE3-VB is suitable for various DC-DC converters, such as buck, boost and inverter converters. In these applications, MOSFET is responsible for switching current to ensure that the voltage is effectively converted from one value to another. Its excellent low RDS(ON) performance helps to improve current handling efficiency and plays an important role in high current and high efficiency power supply systems.
4. **Power Tools and Electrical Drive Systems**
In power tools, motor drives and other industrial electrical control systems, SiHFZ48RS-GE3-VB can be used in high current control circuits, especially for precise control of motor starting and operation. The high current carrying capacity (75A) and low on-resistance (12mΩ) of MOSFET enable it to effectively handle high load currents, and is suitable for various high-efficiency electrical drive applications such as power tools, robots, and automation equipment.
5. **LED Driver**
SiHFZ48RS-GE3-VB is also very suitable for LED driver. LED driver usually requires high-efficiency current switching to ensure stable operation of LED lamps. The low on-resistance of MOSFET can ensure reduced power loss during current control, especially in high-power LED lighting applications such as commercial lighting, street lighting, etc.
6. **Power Factor Correction (PFC) Circuit**
In the power factor correction (PFC) circuit, SiHFZ48RS-GE3-VB can help improve the waveform of the input current, thereby improving the power factor of the power system. In AC-DC power converters, MOSFETs are used to regulate input current and voltage, ensure efficient power factor correction, optimize power use, and reduce energy loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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