中文
English
SiHFZ48RL-E3-VB Product details
Back to previous pageProduct introduction：
**
SiHFZ48RL-E3-VB is a high-performance N-type MOSFET packaged in TO262 and using Trench technology. The device has a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and is suitable for high-current, high-efficiency switching power supplies and power control systems. Its threshold voltage (Vth) is 1.7V, and RDS(ON) is 15mΩ (at VGS=10V), with very low on-resistance, thereby reducing power loss and improving system efficiency. The maximum drain current (ID) is 60A, making it perform well in applications with high current requirements. SiHFZ48RL-E3-VB is suitable for applications such as high-power power management, motor drive, and battery charge and discharge control.
**
SiHFZ48RL-E3-VB is a high-performance N-type MOSFET packaged in TO262 and using Trench technology. The device has a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, and is suitable for high-current, high-efficiency switching power supplies and power control systems. Its threshold voltage (Vth) is 1.7V, and RDS(ON) is 15mΩ (at VGS=10V), with very low on-resistance, thereby reducing power loss and improving system efficiency. The maximum drain current (ID) is 60A, making it perform well in applications with high current requirements. SiHFZ48RL-E3-VB is suitable for applications such as high-power power management, motor drive, and battery charge and discharge control.
**
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 1.7V | 60A | 15mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 1.7V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 1.7V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
**
- **Package type**: TO262
- **Configuration**: Single channel N-type
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**: 15mΩ (VGS=10V)
- **ID (drain current)**: 60A
- **Technology**: Trench
- **Operating temperature range**: -55℃ to +150℃
- **Package type**: TO262
- **Configuration**: Single channel N-type
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 1.7V
- **RDS(ON)**: 15mΩ (VGS=10V)
- **ID (drain current)**: 60A
- **Technology**: Trench
- **Operating temperature range**: -55℃ to +150℃
Domain and module applications：
SiHFZ48RL-E3-VB is suitable for a variety of applications that require high current and high efficiency. Its maximum drain-source voltage is 60V and it has a very low on-resistance (RDS(ON)=15mΩ), making it particularly suitable for power management fields such as high-power DC-DC converters, DC motor drives, and battery management systems. In these applications, MOSFET can effectively control voltage and current, reduce power loss, and improve system efficiency and reliability.
In addition, SiHFZ48RL-E3-VB is also widely used in battery charging and discharging systems of electric vehicles and new energy vehicles. It can operate at high current and control the current flow during battery charging to ensure battery safety and long life. In the industrial field, it can also be used as a switching element, such as for motor drives, power adapters, inverters in electrical equipment, etc. Due to its good switching characteristics and low RDS(ON) performance, this MOSFET is also suitable for high-frequency, high-power conversion power systems, helping to improve conversion efficiency and reduce heat generation.
In summary, the SiHFZ48RL-E3-VB is suitable for use in power-intensive, high-efficiency electronic systems, especially in environments requiring high current and low loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
