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SiHFZ44L-E3-VB Product details
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Product Introduction:
**SiHFZ44L-E3-VB** is a high-performance N-channel MOSFET in TO262 package, suitable for high power and high efficiency applications. It features low R_DS(on) (15mΩ @V_GS = 10V) and high current carrying capacity (maximum 60A), as well as low gate threshold voltage (V_th = 1.7V), which is very suitable for use in high-frequency, high-efficiency power conversion and drive applications. The Trench technology it uses can optimize the current conduction path, reduce conduction losses, and provide higher switching performance, suitable for applications requiring high-speed switching and low on-resistance.
**SiHFZ44L-E3-VB** is a high-performance N-channel MOSFET in TO262 package, suitable for high power and high efficiency applications. It features low R_DS(on) (15mΩ @V_GS = 10V) and high current carrying capacity (maximum 60A), as well as low gate threshold voltage (V_th = 1.7V), which is very suitable for use in high-frequency, high-efficiency power conversion and drive applications. The Trench technology it uses can optimize the current conduction path, reduce conduction losses, and provide higher switching performance, suitable for applications requiring high-speed switching and low on-resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 1.7V | 60A | 15mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 1.7V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 1.7V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description:
- **Model: ** SiHFZ44L-E3-VB
- **Package: ** TO262
- **Configuration: ** Single-N-Channel
- **Maximum drain-source voltage (V_DS): ** 60V
- **Maximum gate-source voltage (V_GS): ** ±20V
- **Gate threshold voltage (V_th): ** 1.7V
- **On-resistance (R_DS(on)): ** 15mΩ @ V_GS = 10V
- **Maximum drain current (I_D): ** 60A
- **Technology: ** Trench technology
- **Model: ** SiHFZ44L-E3-VB
- **Package: ** TO262
- **Configuration: ** Single-N-Channel
- **Maximum drain-source voltage (V_DS): ** 60V
- **Maximum gate-source voltage (V_GS): ** ±20V
- **Gate threshold voltage (V_th): ** 1.7V
- **On-resistance (R_DS(on)): ** 15mΩ @ V_GS = 10V
- **Maximum drain current (I_D): ** 60A
- **Technology: ** Trench technology
Domain and module applications：
Examples of applicable fields and modules:
**1. Power tools and battery-driven devices: **
The high current carrying capacity and low on-resistance of SiHFZ44L-E3-VB MOSFET make it an ideal choice for battery-driven devices such as power tools, drones, and electric vehicles. It can achieve efficient battery charge and discharge control in the battery management system (BMS), ensuring high efficiency and long life of the system.
**2. Power management: **
In DC-DC converters, SiHFZ44L-E3-VB MOSFET can provide efficient power conversion as a switching element. Due to its low on-resistance and high current carrying capacity, it can effectively reduce power consumption and improve conversion efficiency. It is widely used in computer power supplies, industrial power supplies, and high-efficiency power supply modules (such as UPS).
**3. Solar inverters: **
This MOSFET plays an important role in solar inverters, especially in MPPT (maximum power point tracking) systems, using its low R_DS(on) and efficient switching characteristics to improve energy conversion efficiency, reduce inverter power losses, and ensure efficient operation of solar systems.
**4. Electric drive systems: **
SiHFZ44L-E3-VB is suitable for current control in electric vehicles, hybrid vehicles, and various electric drive systems. Its maximum drain current of up to 60A enables it to cope with the high power requirements in electric drives, while the low on-resistance helps reduce the thermal losses of the system.
**5. High-frequency power conversion: **
Due to the use of Trench technology, the SiHFZ44L-E3-VB MOSFET can switch at a higher speed, making it ideal for applications that require high-speed switching, such as wireless communications, telecommunications base station power systems, and high-efficiency power modules.
These features make the SiHFZ44L-E3-VB MOSFET a key component in power electronic systems, especially in applications requiring high efficiency, low power consumption and high current handling capability.
**1. Power tools and battery-driven devices: **
The high current carrying capacity and low on-resistance of SiHFZ44L-E3-VB MOSFET make it an ideal choice for battery-driven devices such as power tools, drones, and electric vehicles. It can achieve efficient battery charge and discharge control in the battery management system (BMS), ensuring high efficiency and long life of the system.
**2. Power management: **
In DC-DC converters, SiHFZ44L-E3-VB MOSFET can provide efficient power conversion as a switching element. Due to its low on-resistance and high current carrying capacity, it can effectively reduce power consumption and improve conversion efficiency. It is widely used in computer power supplies, industrial power supplies, and high-efficiency power supply modules (such as UPS).
**3. Solar inverters: **
This MOSFET plays an important role in solar inverters, especially in MPPT (maximum power point tracking) systems, using its low R_DS(on) and efficient switching characteristics to improve energy conversion efficiency, reduce inverter power losses, and ensure efficient operation of solar systems.
**4. Electric drive systems: **
SiHFZ44L-E3-VB is suitable for current control in electric vehicles, hybrid vehicles, and various electric drive systems. Its maximum drain current of up to 60A enables it to cope with the high power requirements in electric drives, while the low on-resistance helps reduce the thermal losses of the system.
**5. High-frequency power conversion: **
Due to the use of Trench technology, the SiHFZ44L-E3-VB MOSFET can switch at a higher speed, making it ideal for applications that require high-speed switching, such as wireless communications, telecommunications base station power systems, and high-efficiency power modules.
These features make the SiHFZ44L-E3-VB MOSFET a key component in power electronic systems, especially in applications requiring high efficiency, low power consumption and high current handling capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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