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SIHFZ24S-VB Product details
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SIHFZ24S-VB Product Introduction
SIHFZ24S-VB is a single N-channel MOSFET in TO263 package, designed for low-voltage and high-efficiency applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, which is suitable for various medium and low voltage power management and switch control applications. Its threshold voltage (Vth) is 1.7V, which means that it can be turned on at a lower gate voltage, suitable for low-voltage drive occasions. The on-resistance (RDS(ON)) of this MOSFET is 35mΩ at VGS = 4.5V and 32mΩ at VGS = 10V, providing low-loss current conduction characteristics. The maximum drain current (ID) is 50A, suitable for high-current drive applications. The use of Trench technology can provide lower on-resistance and higher switching speed, suitable for high-efficiency switching power supplies and current control modules.
SIHFZ24S-VB is a single N-channel MOSFET in TO263 package, designed for low-voltage and high-efficiency applications. The maximum drain-source voltage (VDS) of this MOSFET is 60V, which is suitable for various medium and low voltage power management and switch control applications. Its threshold voltage (Vth) is 1.7V, which means that it can be turned on at a lower gate voltage, suitable for low-voltage drive occasions. The on-resistance (RDS(ON)) of this MOSFET is 35mΩ at VGS = 4.5V and 32mΩ at VGS = 10V, providing low-loss current conduction characteristics. The maximum drain current (ID) is 50A, suitable for high-current drive applications. The use of Trench technology can provide lower on-resistance and higher switching speed, suitable for high-efficiency switching power supplies and current control modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
SIHFZ24S-VB Detailed Parameters
| Parameter | Value | Description |
|---------------|------------------------|----------------------------------------|
| **Package** | TO263 | Common surface mount package, suitable for high current applications |
| **Configuration** | Single N-type channel | For low-side switch or load switching |
| **Maximum drain-source voltage (VDS)** | 60V | Suitable for low-voltage to medium-voltage applications, supports up to 60V voltage |
| **Gate-source voltage (VGS)** | ±20V | Maximum range of gate voltage |
| **Threshold voltage (Vth)** | 1.7V | Starting voltage for MOSFET to turn on |
| **On-resistance (RDS(ON))** | 35mΩ @ VGS = 4.5V | On-resistance at VGS = 4.5V |
| **On-resistance (RDS(ON))** | 32mΩ @ VGS = 10V | On-resistance at VGS = 10V|
| **Maximum drain current (ID)** | 50A | Maximum drain current for high power applications|
| **Technology** | Trench | Trench technology improves conduction performance and switching speed|
| Parameter | Value | Description |
|---------------|------------------------|----------------------------------------|
| **Package** | TO263 | Common surface mount package, suitable for high current applications |
| **Configuration** | Single N-type channel | For low-side switch or load switching |
| **Maximum drain-source voltage (VDS)** | 60V | Suitable for low-voltage to medium-voltage applications, supports up to 60V voltage |
| **Gate-source voltage (VGS)** | ±20V | Maximum range of gate voltage |
| **Threshold voltage (Vth)** | 1.7V | Starting voltage for MOSFET to turn on |
| **On-resistance (RDS(ON))** | 35mΩ @ VGS = 4.5V | On-resistance at VGS = 4.5V |
| **On-resistance (RDS(ON))** | 32mΩ @ VGS = 10V | On-resistance at VGS = 10V|
| **Maximum drain current (ID)** | 50A | Maximum drain current for high power applications|
| **Technology** | Trench | Trench technology improves conduction performance and switching speed|
Domain and module applications：
Applications and module examples
1. **High-efficiency power management system**
SIHFZ24S-VB's low on-resistance and large maximum drain current make it ideal for high-efficiency power management applications. It can be used in DC-DC converters, AC-DC power supplies, and other power modules to help reduce energy loss and improve overall system efficiency. SIHFZ24S-VB has excellent performance, especially in power supply designs that require high current and low voltage environments.
2. **Motor control system**
Due to its high drain current carrying capacity (50A), SIHFZ24S-VB can be widely used in motor control fields such as DC motor drives, brushless DC motor (BLDC) control, etc. These applications usually require MOSFETs that can switch quickly and handle high currents to improve motor efficiency and control accuracy. Its low on-resistance can also reduce power losses in motor drives.
3. **Automotive Electronics Power Management**
In the fields of electric vehicles, hybrid electric vehicles (HEVs), etc., SIHFZ24S-VB can be used as an efficient power conversion and management component, especially in the vehicle's low-voltage battery management, charging system, and other on-board electronic devices. In these applications, MOSFETs must have low on-resistance and large current carrying capacity to ensure efficient operation and safety of the system.
4. **LED Driver**
Due to the high current handling capability and low on-resistance of SIHFZ24S-VB, it is very suitable for use in high-efficiency LED driver power supplies. LED driver power supplies usually require the ability to quickly adjust current and maintain high efficiency of the system. The low on-resistance of MOSFET helps to reduce power loss and provide stable current output to ensure efficient lighting of LEDs.
5. **Battery Charging System**
SIHFZ24S-VB can be used as a current switching element in a battery charger to help control the charging current and battery voltage to ensure accurate and safe charging. It can work stably under high current and is suitable for charging management systems of various batteries such as lithium batteries and nickel-metal hydride batteries.
6. **Power management of consumer electronics products**
In the field of consumer electronics, SIHFZ24S-VB can be used in power management modules of devices such as laptops, tablets, and smart phones. Due to its low on-resistance and large current handling capability, it can effectively improve battery charging efficiency and provide a stable power supply for the device.
7. **Wireless communication equipment**
In wireless communication equipment, SIHFZ24S-VB can also be used as a power switch or regulator, suitable for power modules of base stations, routers and other equipment. Its high current carrying capacity and low on-resistance help improve the energy efficiency of the equipment, reduce power loss, and improve system performance.
1. **High-efficiency power management system**
SIHFZ24S-VB's low on-resistance and large maximum drain current make it ideal for high-efficiency power management applications. It can be used in DC-DC converters, AC-DC power supplies, and other power modules to help reduce energy loss and improve overall system efficiency. SIHFZ24S-VB has excellent performance, especially in power supply designs that require high current and low voltage environments.
2. **Motor control system**
Due to its high drain current carrying capacity (50A), SIHFZ24S-VB can be widely used in motor control fields such as DC motor drives, brushless DC motor (BLDC) control, etc. These applications usually require MOSFETs that can switch quickly and handle high currents to improve motor efficiency and control accuracy. Its low on-resistance can also reduce power losses in motor drives.
3. **Automotive Electronics Power Management**
In the fields of electric vehicles, hybrid electric vehicles (HEVs), etc., SIHFZ24S-VB can be used as an efficient power conversion and management component, especially in the vehicle's low-voltage battery management, charging system, and other on-board electronic devices. In these applications, MOSFETs must have low on-resistance and large current carrying capacity to ensure efficient operation and safety of the system.
4. **LED Driver**
Due to the high current handling capability and low on-resistance of SIHFZ24S-VB, it is very suitable for use in high-efficiency LED driver power supplies. LED driver power supplies usually require the ability to quickly adjust current and maintain high efficiency of the system. The low on-resistance of MOSFET helps to reduce power loss and provide stable current output to ensure efficient lighting of LEDs.
5. **Battery Charging System**
SIHFZ24S-VB can be used as a current switching element in a battery charger to help control the charging current and battery voltage to ensure accurate and safe charging. It can work stably under high current and is suitable for charging management systems of various batteries such as lithium batteries and nickel-metal hydride batteries.
6. **Power management of consumer electronics products**
In the field of consumer electronics, SIHFZ24S-VB can be used in power management modules of devices such as laptops, tablets, and smart phones. Due to its low on-resistance and large current handling capability, it can effectively improve battery charging efficiency and provide a stable power supply for the device.
7. **Wireless communication equipment**
In wireless communication equipment, SIHFZ24S-VB can also be used as a power switch or regulator, suitable for power modules of base stations, routers and other equipment. Its high current carrying capacity and low on-resistance help improve the energy efficiency of the equipment, reduce power loss, and improve system performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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