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SIHFUC20-E3-VB Product details
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SIHFUC20-E3-VB MOSFET Product Introduction
SIHFUC20-E3-VB is a unipolar N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO251 package. The MOSFET is equipped with a withstand voltage of 650V, a maximum gate-source voltage of ±30V, and a high turn-on voltage (Vth) of 3.5V. Its low RDS(ON) is 4300mΩ@VGS=10V, which can effectively reduce conduction losses. The device supports a maximum continuous leakage current of 2A and is suitable for application scenarios requiring high voltage, high efficiency and low switching loss. The use of planar technology (Plannar) makes it have excellent reliability and performance, and is suitable for various power management, power conversion and load drive applications.
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SIHFUC20-E3-VB is a unipolar N-channel metal oxide semiconductor field effect transistor (MOSFET) in TO251 package. The MOSFET is equipped with a withstand voltage of 650V, a maximum gate-source voltage of ±30V, and a high turn-on voltage (Vth) of 3.5V. Its low RDS(ON) is 4300mΩ@VGS=10V, which can effectively reduce conduction losses. The device supports a maximum continuous leakage current of 2A and is suitable for application scenarios requiring high voltage, high efficiency and low switching loss. The use of planar technology (Plannar) makes it have excellent reliability and performance, and is suitable for various power management, power conversion and load drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
SIHFUC20-E3-VB MOSFET Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 2A
- **Technology**: Planar technology (Plannar)
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- **Package type**: TO251
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Turn-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 4300mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 2A
- **Technology**: Planar technology (Plannar)
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Domain and module applications：
Application fields and module examples
1. **Power management and high-voltage power modules**
- **Application scenarios**: SIHFUC20-E3-VB is suitable for high-voltage power conversion modules, such as DC-DC converters, AC-DC adapters, etc. Its 650V withstand voltage capability enables this MOSFET to withstand high-voltage working environments, especially suitable for battery chargers and power conversion equipment. In these applications, low RDS(ON) values help improve efficiency, reduce heat, and enhance system stability.
2. **Switching power supply (SMPS)**
- **Application scenarios**: This MOSFET is very suitable for use in switching power supplies (SMPS), especially as a power switch or rectifier on the high-voltage input side. Its high withstand voltage of up to 650V allows it to withstand fluctuations in the input voltage of the switching power supply, while planar technology provides better conduction performance, ensuring the efficiency and reliability of the system.
3. **Power tool power driver**
- **Application scenarios**: In power tools, electric vehicle chargers, and other high-power electronic devices, this MOSFET can be used as a power management or load switch. Its low on-resistance and high withstand voltage characteristics ensure efficient and stable current conduction, reducing power loss and heat generation.
4. **High-efficiency load switch**
- **Application scenarios**: SIHFUC20-E3-VB can be used as a high-efficiency load switch in automotive and industrial applications. For example, in a battery management system (BMS), this MOSFET can provide efficient current switching, ensuring current switching stability during battery charging and discharging while reducing energy loss.
These application scenarios show the wide application of this type of MOSFET in power conversion, power control, and high-voltage switching circuits, and are suitable for various systems with high requirements for current, withstand voltage, and conduction performance.
1. **Power management and high-voltage power modules**
- **Application scenarios**: SIHFUC20-E3-VB is suitable for high-voltage power conversion modules, such as DC-DC converters, AC-DC adapters, etc. Its 650V withstand voltage capability enables this MOSFET to withstand high-voltage working environments, especially suitable for battery chargers and power conversion equipment. In these applications, low RDS(ON) values help improve efficiency, reduce heat, and enhance system stability.
2. **Switching power supply (SMPS)**
- **Application scenarios**: This MOSFET is very suitable for use in switching power supplies (SMPS), especially as a power switch or rectifier on the high-voltage input side. Its high withstand voltage of up to 650V allows it to withstand fluctuations in the input voltage of the switching power supply, while planar technology provides better conduction performance, ensuring the efficiency and reliability of the system.
3. **Power tool power driver**
- **Application scenarios**: In power tools, electric vehicle chargers, and other high-power electronic devices, this MOSFET can be used as a power management or load switch. Its low on-resistance and high withstand voltage characteristics ensure efficient and stable current conduction, reducing power loss and heat generation.
4. **High-efficiency load switch**
- **Application scenarios**: SIHFUC20-E3-VB can be used as a high-efficiency load switch in automotive and industrial applications. For example, in a battery management system (BMS), this MOSFET can provide efficient current switching, ensuring current switching stability during battery charging and discharging while reducing energy loss.
These application scenarios show the wide application of this type of MOSFET in power conversion, power control, and high-voltage switching circuits, and are suitable for various systems with high requirements for current, withstand voltage, and conduction performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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